公开(公告)号：US20250105834A1

公开(公告)日：2025-03-27

申请号：US18885982

申请日：2024-09-16

Applicant: ROHM CO., LTD.

Inventor： Makoto SADA ,  Katsuaki YAMADA ,  Shuntaro TAKAHASHI ,  Toru TAKUMA ,  Naoki TAKAHASHI

IPC: H03K17/082

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a semiconductor substrate; a well, formed in the semiconductor substrate; an output terminal, electrically connected to the semiconductor substrate; a ground terminal, configured to receive a ground voltage; a detection signal generating circuit, configured to generate a negative current detection signal when an output voltage present at the output terminal is detected to be less than the ground voltage; and a control circuit, configured to apply the ground voltage or the output voltage to the well in response to the negative current detection signal. The detection signal generating circuit includes: a comparator, configured to generate the negative current detection signal by comparing an output detection voltage with the ground voltage or the threshold voltage; a bias circuit, configured to switch between applying the output voltage or a bias voltage as the output detection voltage; and a clamp circuit.

公开(公告)号：US20230026059A1

公开(公告)日：2023-01-26

申请号：US17785172

申请日：2020-12-17

Applicant: Rohm Co., Ltd.

Inventor： Toru TAKUMA

IPC: H02H7/22

Abstract: For example, an overcurrent protection circuit 71 includes a hiccup controller 71b which, when an output current To passing through a switching element 10 goes into an overcurrent state, hiccup-drives the switching element 10 such that predetermined on-period ton and off-period toff alternate. For example, the hiccup controller 71b may control at least one of the on- and off-period ton and toff according to a temperature sense signal S71c. For example, the temperature sense signal S71c may be generated by detecting at least one of temperature Tj of the switching element 10 and a difference in temperature ΔTj between the switching element 10 and another element. For example, when at least one of temperature Tj and the difference in temperature ΔTj is higher than a predetermined threshold value, the hiccup controller 71b may conduct at least one of reduction of the on-period ton and increase of the off-period toff.

公开(公告)号：US20240372544A1

公开(公告)日：2024-11-07

申请号：US18775424

申请日：2024-07-17

Applicant: ROHM Co., LTD.

Inventor： Toru TAKUMA

IPC: H03K17/082 ,  B60R16/02 ,  H02H9/02

Abstract: Disclosed herein is an overcurrent protection circuit configured to, upon detection of an output current that flows through a switch element reaching a first overcurrent limit value, reduce an overcurrent limit value for the output current from the first overcurrent limit value to a second overcurrent limit value smaller than the first overcurrent limit value.

公开(公告)号：US20220308612A1

公开(公告)日：2022-09-29

申请号：US17655854

申请日：2022-03-22

Applicant: ROHM Co., LTD.

Inventor： Kenji MURAOKA ,  Toru TAKUMA

IPC: G05F1/573 ,  H03K19/003 ,  H02H3/08 ,  H03K17/081 ,  B60R16/02

Abstract: Provided is an overcurrent protection circuit including an overcurrent detection unit configured to compare an output current flowing through a switch element and a predetermined overcurrent detection value to generate an overcurrent detection signal, an output activation detection unit configured to compare an output voltage and a predetermined threshold voltage to generate an output activation detection signal, a logic unit configured to combine the overcurrent detection signal and the output activation detection signal to generate a logic operation signal, and a diagnostic output unit configured to provide diagnostic output, the logic unit shifting the logic operation signal to a logic level of abnormal state when the overcurrent detection signal is shifted to a logic level of overcurrent detection state and holding the logic operation signal at that logic level, unless the output activation detection signal is shifted to a logic level of output activation state.

公开(公告)号：US20240088884A1

公开(公告)日：2024-03-14

申请号：US18465338

申请日：2023-09-12

Applicant: ROHM CO., LTD.

Inventor： Katsuaki YAMADA ,  Makoto SADA ,  Toru TAKUMA

IPC: H03K17/081 ,  B60L50/50 ,  H03K17/06 ,  H03K17/687

CPC classification number: H03K17/08104 ,  B60L50/50 ,  H03K17/063 ,  H03K17/6871

Abstract: A semiconductor device includes: a first output transistor and a second output transistor configured to be connected between a first terminal and second terminal; an active clamp circuit configured to be connected to a first control terminal of the first output transistor to limit a terminal-to-terminal voltage appearing between the first and second terminals to a clamp voltage or less; a first variable resistive element provided between a node configured to be fed with a control signal and the first control terminal; a second variable resistive element provided between the node and a second control terminal of the second output transistor; and a turn-off circuit configured to be connected to a connection node between the second variable resistive element and the second control terminal so as to be able to turn the second output transistor off.

公开(公告)号：US20230133872A1

公开(公告)日：2023-05-04

申请号：US18049731

申请日：2022-10-26

Applicant: ROHM Co., LTD.

Inventor： Toru TAKUMA ,  Adrian Joita ,  Shuntaro Takahashi

IPC: H01L27/02 ,  H01L29/78 ,  H02M3/156

Abstract: Disclosed is a gate control circuit that generates a gate control signal of an output transistor connected between an application end of a power supply voltage and an application end of an output voltage. The gate control circuit includes a first current source connected between the application end of the power supply voltage and the application end of the output voltage, a second current source connected between an application end of a booster voltage and an application end of a reference voltage, the booster voltage being raised to a voltage value higher than the power supply voltage in a steady state, an output stage that uses at least one of the first and second current sources to generate a gate charge current for charging a gate of the output transistor, and a controller that uses at least one of the first and second current sources according to the output voltage.

公开(公告)号：US20200212664A1

公开(公告)日：2020-07-02

申请号：US16726461

申请日：2019-12-24

Applicant: Rohm Co., Ltd.

Inventor： Toru TAKUMA ,  Shuntaro TAKAHASHI

IPC: H02H1/00 ,  B60R16/02 ,  H02H3/087 ,  H03K17/0812 ,  H03K17/14 ,  H03K19/003 ,  H03K17/687

Abstract: A switching device has, for example, a first terminal configured to be connected to an application node for a first voltage, a second terminal configured to be connected to the first end of a load, a third terminal configured to be connected to the second end of the load and to an application node for a second voltage, a switching element configured to be connected between the first and second terminals, a first active clamper configured to limit the output voltage at the second terminal with reference to the first voltage in a first state, and a second active clamper configured to limit the output voltage with reference to the second voltage in a second state different from the first state.

公开(公告)号：US20240128169A1

公开(公告)日：2024-04-18

申请号：US18533721

申请日：2023-12-08

Applicant: ROHM CO., LTD.

Inventor： Hajime OKUDA ,  Yuto NISHIYAMA ,  Toru TAKUMA

IPC: H01L23/495 ,  H01L23/31

CPC classification number: H01L23/49568 ,  H01L23/3135 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575

Abstract: A semiconductor device is configured to increase energy absorbed by an active clamp. The semiconductor device comprises a semiconductor element, a sealing resin, and a coating member. The semiconductor element includes a first electrode. The sealing resin covers the semiconductor element. The coating member is interposed between the first electrode and the sealing resin. The coating member contains a material with higher thermal conductivity than the sealing resin.

公开(公告)号：US20230216289A1

公开(公告)日：2023-07-06

申请号：US18181064

申请日：2023-03-09

Applicant: Rohm Co. Ltd.

Inventor： Toru TAKUMA ,  Naoki TAKAHASHI ,  Shuntaro TAKAHASHI

IPC: H02H1/00 ,  H02H3/093 ,  B60R16/02 ,  H02H3/087 ,  H02H7/20 ,  B60R16/03

CPC classification number: H02H1/0007 ,  H02H3/093 ,  B60R16/02 ,  H02H3/087 ,  H02H7/20 ,  B60R16/03 ,  H02H7/205

Abstract: In order both to accommodate instantaneous current as well as overcurrent protection in accordance with the load, an overcurrent protection circuit has: a threshold value generation unit that, in accordance with a threshold value control signal, switches between setting an overcurrent detection threshold value to a first set value (∝ Iref) and a second set value (∝ Iset) lower than the first set value; an overcurrent detection unit that compares a sense signal in accordance with the current being monitored and the overcurrent detection value and generates an overcurrent protection signal; a reference value generation unit that generates a reference value (∝ Iset) in accordance with the seconds set value; a comparison unit that compares the sense signal and the reference value, and generates a comparison signal; and a threshold value control unit that monitors the comparison signal, and generates a threshold value control signal.

公开(公告)号：US20210288637A1

公开(公告)日：2021-09-16

申请号：US17197312

申请日：2021-03-10

Applicant: ROHM Co., LTD.

Inventor： Toru TAKUMA

IPC: H03K17/082

Abstract: Disclosed herein is an overcurrent protection circuit configured to, upon detection of an output current that flows through a switch element reaching a first overcurrent limit value, reduce an overcurrent limit value for the output current from the first overcurrent limit value to a second overcurrent limit value smaller than the first overcurrent limit value.