公开(公告)号：US20240088051A1

公开(公告)日：2024-03-14

申请号：US18261114

申请日：2022-01-12

Applicant: Resonac Corporation

Inventor： Kazuyuki MITSUKURA ,  Shunsuke OTAKE ,  Hiroaki FUJITA ,  Shinji SHIMAOKA ,  Takashi MASUKO ,  Kazuhiko KURAFUCHI

IPC: H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC classification number: H01L23/5386 ,  H01L21/4846 ,  H01L24/08 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0655 ,  H01L25/50 ,  H01L21/561 ,  H01L2224/08225 ,  H01L2224/19 ,  H01L2224/211

Abstract: A method for manufacturing a semiconductor device is disclosed. The method for manufacturing a semiconductor device includes preparing a base material, preparing a plurality of semiconductor elements each having a connection terminal, preparing a wiring board provided with a first wiring, arranging the plurality of semiconductor elements on the base material, covering the plurality of semiconductor elements on the base material with an insulating material, arranging the wiring board on at least one of the plurality of semiconductor elements so that the first wiring is connected to at least some of the connection terminals of the plurality of semiconductor elements covered with the insulating material, and forming a second wiring around the first wiring. The first wiring has finer wiring than the second wiring.

公开(公告)号：US20230331946A1

公开(公告)日：2023-10-19

申请号：US18245347

申请日：2021-09-15

Applicant: Resonac Corporation

Inventor： Shunsuke OTAKE ,  Kazuyuki MITSUKURA ,  Shinji SHIMAOKA ,  Hiroaki FUJITA ,  Masaki TAKAHASHI

IPC: C08J5/24 ,  H01L23/498 ,  H01L21/48 ,  B32B15/14

CPC classification number: C08J5/244 ,  H01L23/49822 ,  H01L23/49894 ,  H01L21/4857 ,  B32B15/14 ,  C08J2379/08 ,  C08J2463/00 ,  B32B2307/7376 ,  B32B2457/00 ,  B32B2260/021 ,  B32B2260/046

Abstract: A method for manufacturing a substrate material for a semiconductor package, including a step of increasing a temperature of a laminated body in which a metal foil, one or more prepregs, and a metal foil are laminated in this order to a hot-press temperature while pressurizing the laminated body. The prepreg contains an inorganic fiber base material and a thermosetting resin composition. A content of the thermosetting resin composition is 40 to 80% by mass on the basis of a mass of the prepreg. In the step of increasing the temperature of the laminated body to the hot-press temperature while pressurizing the laminated body, the laminated body is heated in a condition in which the lowest melt viscosity of the prepreg is 5000 Pa·s or less.

公开(公告)号：US20240247120A1

公开(公告)日：2024-07-25

申请号：US18562166

申请日：2022-05-30

Applicant: Resonac Corporation

Inventor： Shunsuke TONOUCHI ,  Takayo KITAJIMA ,  Seiya MAGOTA ,  Kazuki AOYAMA ,  Shinji SHIMAOKA ,  Yuji TOSAKA ,  Takeshi SAITOH ,  Ryohta SASAKI ,  Kota NAKANISHI

IPC: C08J5/24 ,  H05K1/03

CPC classification number: C08J5/244 ,  H05K1/0366 ,  C08J2333/24 ,  C08J2363/04 ,  C08J2461/06 ,  C08J2463/00

Abstract: Provided is a prepreg including a fiber substrate having a thickness of 40 μm or more impregnated with a thermosetting resin composition, the prepreg having in the fiber substrate an impregnated region and a non-impregnated region with the thermosetting resin composition, having a surface waviness (Wa) of 5.0 μm or less. Also provided are a laminate, a metal-clad laminate, a printed wiring board, and a semiconductor package, which are obtained by using the prepreg, a method of producing the prepreg, and a method of producing the metal-clad laminate.

公开(公告)号：US20230356498A1

公开(公告)日：2023-11-09

申请号：US18245348

申请日：2021-09-15

Applicant: Resonac Corporation

Inventor： Shunsuke OTAKE ,  Kazuyuki MITSUKURA ,  Takashi MASUKO ,  Kazuhiko KURAFUCHI ,  Shinji SHIMAOKA ,  Hiroaki FUJITA

IPC: B32B5/26 ,  B32B33/00

CPC classification number: B32B5/263 ,  B32B33/00 ,  B32B2260/023 ,  B32B2260/046 ,  B32B2457/00

Abstract: An organic core material including a first layer having a first fiber cloth and a first resin layer formed from a first resin component and having the first fiber cloth embedded therein, and a second layer having a second fiber cloth and a second resin layer formed from a second resin component and having the second fiber cloth embedded therein. The organic core material has a laminated structure including the second layer, a plurality of the first layers, and the second layer in order, and a content percentage of the second resin component based on a mass of the second resin layer is higher than a content percentage of the first resin component based on a mass of the first resin layer.

公开(公告)号：US20250112115A1

公开(公告)日：2025-04-03

申请号：US18729041

申请日：2022-12-26

Applicant: Resonac Corporation

Inventor： Masaki TAKAHASHI ,  Hiroaki FUJITA ,  Shinji SHIMAOKA ,  Hirokazu NOMA

IPC: H01L23/373 ,  H01L23/14

Abstract: The present embodiment relates to a semiconductor package including an organic substrate having a circuit, a semiconductor chip that is mounted on a part of one surface of the organic substrate, and is electrically connected to the circuit, and a metal plate that is adhered to the one surface of the organic substrate in at least a part of a region where the semiconductor chip is not mounted, and is not electrically connected to the circuit, a metal constituting the metal plate having an average thermal expansion coefficient at 30 to 260° C. of 3 to 15 ppm/° C.

公开(公告)号：US20240381529A1

公开(公告)日：2024-11-14

申请号：US18691691

申请日：2021-09-15

Applicant: Resonac Corporation

Inventor： Shunsuke OTAKE ,  Kazuyuki MITSUKURA ,  Shinji SHIMAOKA ,  Hiroaki FUJITA ,  Masaki TAKAHASHI

IPC: H05K1/03 ,  H01L23/14 ,  H05K3/46

Abstract: A method for manufacturing a substrate material for a semiconductor package having an insulating substrate includes forming an insulating substrate from a prepreg by a molding treatment including increasing a temperature of a laminated body including two or more laminated sheets of a prepreg while pressurizing the laminated body. The molding treatment includes increasing the temperature of the laminated body under a heating condition in which a melt viscosity of the prepreg increases to 1000×103 Pa·s at a rate of 55×103 Pa·s/min or greater from a time point at which a minimum melt viscosity is exhibited.