公开(公告)号：US20230356498A1

公开(公告)日：2023-11-09

申请号：US18245348

申请日：2021-09-15

申请人： Resonac Corporation

发明人： Shunsuke OTAKE ,  Kazuyuki MITSUKURA ,  Takashi MASUKO ,  Kazuhiko KURAFUCHI ,  Shinji SHIMAOKA ,  Hiroaki FUJITA

IPC分类号： B32B5/26 ,  B32B33/00

CPC分类号： B32B5/263 ,  B32B33/00 ,  B32B2260/023 ,  B32B2260/046 ,  B32B2457/00

摘要： An organic core material including a first layer having a first fiber cloth and a first resin layer formed from a first resin component and having the first fiber cloth embedded therein, and a second layer having a second fiber cloth and a second resin layer formed from a second resin component and having the second fiber cloth embedded therein. The organic core material has a laminated structure including the second layer, a plurality of the first layers, and the second layer in order, and a content percentage of the second resin component based on a mass of the second resin layer is higher than a content percentage of the first resin component based on a mass of the first resin layer.

公开(公告)号：US20240306308A1

公开(公告)日：2024-09-12

申请号：US18650160

申请日：2024-04-30

申请人： RESONAC CORPORATION

发明人： Masaya TOBA ,  Kazuhiko KURAFUCHI ,  Takashi MASUKO ,  Kazuyuki MITSUKURA ,  Shinichiro ABE

IPC分类号： H05K3/18 ,  C23C18/16 ,  C23C18/20 ,  C23C18/32 ,  C23C18/38 ,  H05K1/03

CPC分类号： H05K3/181 ,  C23C18/1605 ,  C23C18/165 ,  C23C18/20 ,  C23C18/32 ,  C23C18/38 ,  H05K1/032 ,  H05K2201/068

摘要： A semiconductor package includes a wiring board and a semiconductor element mounted on the wiring board. The wiring board includes a first insulating material layer having a surface with an arithmetic average roughness Ra of 100 nm or less, a metal wiring provided on the surface of the first insulating material layer, and a second insulating material layer provided to cover the metal wiring. The metal wiring is configured by a metal layer in contact with the surface of the first insulating material layer and a conductive part stacked on a surface of the metal layer, and a nickel content rate of the metal layer is 0.25 to 20% by mass.

公开(公告)号：US20240088051A1

公开(公告)日：2024-03-14

申请号：US18261114

申请日：2022-01-12

申请人： Resonac Corporation

发明人： Kazuyuki MITSUKURA ,  Shunsuke OTAKE ,  Hiroaki FUJITA ,  Shinji SHIMAOKA ,  Takashi MASUKO ,  Kazuhiko KURAFUCHI

IPC分类号： H01L23/538 ,  H01L21/48 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L23/5386 ,  H01L21/4846 ,  H01L24/08 ,  H01L24/16 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0655 ,  H01L25/50 ,  H01L21/561 ,  H01L2224/08225 ,  H01L2224/19 ,  H01L2224/211

摘要： A method for manufacturing a semiconductor device is disclosed. The method for manufacturing a semiconductor device includes preparing a base material, preparing a plurality of semiconductor elements each having a connection terminal, preparing a wiring board provided with a first wiring, arranging the plurality of semiconductor elements on the base material, covering the plurality of semiconductor elements on the base material with an insulating material, arranging the wiring board on at least one of the plurality of semiconductor elements so that the first wiring is connected to at least some of the connection terminals of the plurality of semiconductor elements covered with the insulating material, and forming a second wiring around the first wiring. The first wiring has finer wiring than the second wiring.

公开(公告)号：US20230253215A1

公开(公告)日：2023-08-10

申请号：US18017954

申请日：2020-07-28

申请人： Resonac Corporation

发明人： Masaya TOBA ,  Kazuhiko KURAFUCHI ,  Takashi MASUKO ,  Kazuyuki MITSUKURA

IPC分类号： H01L21/48 ,  H01L23/498 ,  C25D7/12 ,  C25D5/48 ,  C25D5/02 ,  C23C18/16 ,  C23C28/02

CPC分类号： H01L21/4857 ,  H01L23/49822 ,  C25D7/123 ,  C25D5/48 ,  C25D5/022 ,  C23C18/1653 ,  C23C28/023 ,  C23C18/38

摘要： A method for producing a wiring board according to the present disclosure includes: (A) forming a first insulating material layer on a supporting substrate; (B) forming a first opening part in the first insulating material layer; (C) forming a seed layer on the first insulating material layer; (D) providing a resist pattern on a surface of the seed layer; (E) forming a wiring part including a pad and wiring; (F) removing the resist pattern; (G) removing the seed layer; (H) applying a first surface treatment to the surface of the pad; (I) forming a second insulating material layer; (J) forming a second opening part in the second insulating material layer; (K) applying a second surface treatment to the surface of the pad; and (L) heating the second insulating material layer to a temperature equal to or higher than the glass transition temperature of the second insulating material layer.

公开(公告)号：US20240282684A1

公开(公告)日：2024-08-22

申请号：US18641480

申请日：2024-04-22

申请人： RESONAC CORPORATION

发明人： Kazuyuki MITSUKURA ,  Masaya TOBA ,  Yoshinori EJIRI ,  Kazuhiko KURAFUCHI

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/12 ,  H01L23/14 ,  H01L23/32 ,  H01L23/538 ,  H01L25/065 ,  H05K1/09

CPC分类号： H01L23/49822 ,  H01L21/4857 ,  H01L23/12 ,  H01L23/145 ,  H01L23/32 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5386 ,  H01L23/5389 ,  H01L25/0652 ,  H01L2225/06506 ,  H01L2225/06548 ,  H01L2225/06572 ,  H05K1/09

摘要： An organic interposer includes: a first organic insulating layer including a groove; a first metal wire located in the groove; a barrier metal material covering the first metal wire; and a second metal wire located above the first metal wire, wherein the barrier metal material includes: a first barrier metal film interposed between the first metal wire and an inner surface of the groove; and a second barrier metal film located on the first metal wire, and wherein the second metal wire is in contact with both of the first barrier metal film and the second barrier metal film.