摘要:
An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.
摘要:
An object of the present invention is to provide a scanning electron microscope aiming at making it possible to control the quantity of electrons generated by collision of electrons emitted from a sample with other members, and a sample charging control method using the control of electron quantity. To achieve the object, a scanning electron microscope including a plurality of apertures through which an electron beam can pass and a mechanism for switching the apertures for the electron beam, and a method for controlling sample charging by switching the apertures are proposed. The plurality of apertures are at least two apertures. Portions respectively having different secondary electron emission efficiencies are provided on peripheral portions of the at least two apertures on a side opposed to the sample. The quantity of electrons generated by collision of electrons emitted from the sample can be controlled by switching the apertures.
摘要:
This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle (112) signal; and a second detection condition for detecting a reflected charged particle (111) signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation.
摘要:
A scanning electron microscope and an optical-condition setting method are provided. The optical condition allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there are a large number of measurement and inspection points. A pattern on a sample is measured based on the detection of electrons by scanning the sample surface with an electron beam. A change in measurement values relative to the number of measurements is determined from the measurement values at a plurality of measurement points on the sample, and the sample-surface electric field is controlled so that the inclination of the change becomes equal to zero, or becomes close to zero.
摘要:
It is an object of the present invention to provide an optical-condition setting method for a charged-particle beam device, and the charged-particle beam device which make it possible to set the following optical condition: Namely, an optical condition which allows the suppression of a lowering in the measurement and inspection accuracy caused by the influence of electrification, even if there exist a large number of measurement and inspection points.In order to accomplish the above-described object, the following scanning electron microscope or optical-condition setting method is proposed: Namely, a scanning electron microscope or an optical-condition setting method for measuring a pattern on a sample based on the detection of electrons, the electrons being emitted from the sample by scanning the sample surface with an electron beam, wherein a change in measurement values relative to the number of measurements is determined from the measurement values at a plurality of measurement points on the sample, and the sample-surface electric field is controlled so that the inclination of the change becomes equal to zero, or becomes close to zero.
摘要:
This charged particle beam device is characterized by controlling a deflector in a manner so as to correct the amount of scanning deflection of a charged particle beam between: a first detection condition for detecting a secondary charged particle (112) signal; and a second detection condition for detecting a reflected charged particle (111) signal. As a result, it is possible to correct length measurement error and scaling fluctuation arising when altering the type of charged particle to detect. Thus, in the observation, measurement, and the like of a low-step sample or a charged sample, even when forming an image that is on the basis of the reflected charged particle signal, it is possible to obtain an accurate image regardless of length measurement error and scaling fluctuation.
摘要:
It is to prevent an image drift from occurring caused by a specimen being charged when observing the specimen including an insulating material.A first scan is performed in a predetermined direction on scanning line and in a predetermined sequential direction of scanning lines and a second scan is performed in a scanning direction different from the predetermined scanning direction and in a sequential direction different from the predetermined sequential direction. An image may be created by repeating the process of executing the second scan after executing the first scan and by requiring the arithmetic average of the frames obtained by the second scans. An image may be created by averaging arithmetically at least one frame obtained by the first scan and at least one frame obtained by the second scan.
摘要:
A scanning electron microscope is disclosed. The primary electron beam is radiated on a reticle (specimen), and an observation image of the reticle is obtained using the electrons secondarily released. The microscope comprises a lamp for radiating the vacuum ultraviolet light having the wavelength of not more than 172 nm on the reticle in the atmosphere, a radiation chamber for hermetically sealing the reticle so that the vacuum ultraviolet light can be radiated on the reticle, and a specimen holder for holding the reticle in the radiation chamber and capable of adjusting the distance between the lamp and the reticle.
摘要:
A scanning electron microscope is disclosed. The primary electron beam is radiated on a reticle (specimen), and an observation image of the reticle is obtained using the electrons secondarily released. The microscope comprises a lamp for radiating the vacuum ultraviolet light having the wavelength of not more than 172 nm on the reticle in the atmosphere, a radiation chamber for hermetically sealing the reticle so that the vacuum ultraviolet light can be radiated on the reticle, and a specimen holder for holding the reticle in the radiation chamber and capable of adjusting the distance between the lamp and the reticle.
摘要:
A method and a device are disclosed for suppressing error in electrostatic charge amount or defocus on the basis of electrostatic charge storage due to electron beam scanning when measuring the electrostatic charge amount of the sample or a focus adjustment amount by scanning the electron beam. An electrostatic charge measurement method, a focus adjustment method, or a scanning electron microscope for measuring an electrostatic charge amount or controlling an application voltage to the sample changes the application voltage to the energy filter while moving the scanning location of the electron beam on the sample.