公开(公告)号：US08598022B2

公开(公告)日：2013-12-03

申请号：US13300575

申请日：2011-11-19

申请人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

发明人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC分类号： H01L21/425

CPC分类号： H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：US20120108044A1

公开(公告)日：2012-05-03

申请号：US13300575

申请日：2011-11-19

申请人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

发明人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC分类号： H01L21/265 ,  G21K5/00

CPC分类号： H01J37/3171 ,  C01B35/00 ,  C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  H01L21/265 ,  Y02P20/134

摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

摘要翻译： 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US20110159671A1

公开(公告)日：2011-06-30

申请号：US13048367

申请日：2011-03-15

申请人： Robert KAIM ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

发明人： Robert KAIM ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC分类号： H01L21/265 ,  C01B35/06

CPC分类号： C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

摘要翻译： 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US20110097882A1

公开(公告)日：2011-04-28

申请号：US12913721

申请日：2010-10-27

申请人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

发明人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC分类号： H01L21/26 ,  G21G5/00 ,  H01J27/02 ,  C01B35/06 ,  H01B1/06

CPC分类号： C01B35/061 ,  C01P2006/88 ,  H01J2237/08 ,  H01J2237/31701

摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

公开(公告)号：US08138071B2

公开(公告)日：2012-03-20

申请号：US12913721

申请日：2010-10-27

申请人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

发明人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： C01B35/061 ,  C01P2006/88 ,  H01J2237/08 ,  H01J2237/31701

摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

摘要翻译： 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法以及使用这种化合物的离子注入方法进行了描述，以及存储和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US08062965B2

公开(公告)日：2011-11-22

申请号：US13048367

申请日：2011-03-15

申请人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

发明人： Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Sharad N. Yedave ,  Edward E. Jones ,  Peng Zou ,  Ying Tang ,  Barry Lewis Chambers ,  Richard S. Ray

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： C01B35/061 ,  C01P2006/88 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/31701 ,  Y02P20/134

摘要： An isotopically-enriched, boron-containing compound comprising two or more boron atoms and at least one fluorine atom, wherein at least one of the boron atoms contains a desired isotope of boron in a concentration or ratio greater than a natural abundance concentration or ratio thereof. The compound may have a chemical formula of B2F4. Synthesis methods for such compounds, and ion implantation methods using such compounds, are described, as well as storage and dispensing vessels in which the isotopically-enriched, boron-containing compound is advantageously contained for subsequent dispensing use.

摘要翻译： 包含两个或更多个硼原子和至少一个氟原子的同位素富集的含硼化合物，其中至少一个硼原子含有所需的硼的同位素，其浓度或比例大于天然丰度浓度或比率 。 该化合物可以具有化学式B2F4。 对这些化合物的合成方法和使用这种化合物的离子注入方法进行了描述，以及储存和分配容器，其中有利地含有同位素富集的含硼化合物用于随后的分配用途。

公开(公告)号：US20120252195A1

公开(公告)日：2012-10-04

申请号：US13502855

申请日：2010-10-25

申请人： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

发明人： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC分类号： H01L21/265 ,  C23C16/50

CPC分类号： H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

摘要： An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

摘要翻译： 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性能，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流路中沉积物的检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US08796131B2

公开(公告)日：2014-08-05

申请号：US13502855

申请日：2010-10-25

申请人： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

发明人： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC分类号： H01L21/44

CPC分类号： H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

摘要： An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

摘要翻译： 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性能，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流路中沉积物的检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US20120111374A1

公开(公告)日：2012-05-10

申请号：US13291342

申请日：2011-11-08

申请人： Joseph R. Despres ,  James V. McManus ,  Richard D. Chism ,  Edward E. Jones ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Ying Tang ,  Michael J. Wodjenski ,  Richard S. Ray ,  Barry Lewis Chambers

发明人： Joseph R. Despres ,  James V. McManus ,  Richard D. Chism ,  Edward E. Jones ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Ying Tang ,  Michael J. Wodjenski ,  Richard S. Ray ,  Barry Lewis Chambers

IPC分类号： B08B3/00 ,  G01N25/00

CPC分类号： H01L21/67028 ,  H01J37/02 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/022

摘要： Apparatus and methods for cleaning ion implanters and/or components thereof are described, utilizing cleaning agents reacted with residue deposits to effect removal thereof. An endpoint detection apparatus and method are also disclosed, which may be integrated in the cleaning apparatus and methods to provide highly efficient utilization of the cleaning agent and avoidance of deleterious effects that otherwise can occur when cleaning agents are continued to be exposed to an implanter or components thereof after cleaning has been completed.

摘要翻译： 描述了用于清洁离子注入机和/或其组分的装置和方法，利用与残余物沉积物反应以清除其的清洁剂。 还公开了端点检测装置和方法，其可以集成在清洁装置和方法中，以提供清洁剂的高效利用并避免当清洁剂继续暴露于注入机时可能发生的有害影响，或 清洁后的部件已经完成。

公开(公告)号：US09205392B2

公开(公告)日：2015-12-08

申请号：US13219706

申请日：2011-08-28

申请人： Oleg Byl ,  Edward E. Jones ,  Chiranjeevi Pydi ,  Joseph D. Sweeney

发明人： Oleg Byl ,  Edward E. Jones ,  Chiranjeevi Pydi ,  Joseph D. Sweeney

IPC分类号： B01J19/00 ,  B01J8/02 ,  B01J8/04 ,  C01B35/06 ,  B01J8/00 ,  C01B35/00 ,  C01B35/02

CPC分类号： B01J8/0285 ,  B01J8/0465 ,  B01J2208/00017 ,  B01J2208/00389 ,  B01J2208/00433 ,  B01J2208/00539 ,  C01B35/061

摘要： An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.

摘要翻译： 描述了一种装置，其包括用于在有效形成中间产物的条件下使反应气体与反应性固体接触的反应区域，以及允许气态试剂和中间产物的未反应部分离开反应区域的开口。 该设备可以有利地用于形成作为中间产物和反应气体的反应产物的最终产物。 反应气体和反应性固体的反应可以在第一反应区进行，反应气体和中间产物的反应在第二反应区中进行。 在具体实施方案中，反应气体和中间产物的反应是可逆的，并且反应物气体和中间产物以受控的速率或受控的方式流到第二反应区，以抑制形成反应性固体的反应。