SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20120056222A1

    公开(公告)日:2012-03-08

    申请号:US13037914

    申请日:2011-03-01

    摘要: A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers.

    摘要翻译: 一种半导体发光器件包括第一导电类型的第一半导体层,第二导电类型的第二半导体层,发光层,第一电极层和第二电极层。 发光层位于第一半导体层和第二半导体层之间。 第一电极层位于与第一半导体层相对的第二半导体层的一侧。 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部。 金属部分接触第二半导体层。 沿着该方向观察的开口部分的构造的等效圆直径不小于10纳米且不大于5微米。

    SOLAR CELL
    2.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号:US20130092219A1

    公开(公告)日:2013-04-18

    申请号:US13619360

    申请日:2012-09-14

    IPC分类号: H01L31/0224

    摘要: The present invention provides a solar cell comprising a laminate of a photoelectric conversion layer, a metal porous membrane and a refractive index adjusting layer. The metal porous membrane is positioned on the light-incident side, is directly in contact with the photoelectric conversion layer, and has plural openings bored though the membrane. The refractive index adjusting layer covers at least a part of the surface of the metal porous membrane and of the inner surfaces of the openings, and has a refractive index of 1.35 to 4.2 inclusive. If adopting a nano-fabricated metal membrane as an electrode, the present invention enables to provide a solar cell capable of realizing efficient photoelectric conversion by use of electric field-enhancement effect.

    摘要翻译: 本发明提供一种太阳能电池,其包括光电转换层,金属多孔膜和折射率调节层的层压体。 金属多孔膜位于光入射侧,与光电转换层直接接触,并且具有通过膜而钻出的多个开口。 折射率调节层覆盖金属多孔膜的表面和开口的内表面的至少一部分,折射率为1.35〜4.2。 如果采用纳米制造的金属膜作为电极,则本发明能够提供能够通过使用电场增强效果实现有效的光电转换的太阳能电池。

    LIGHT TRANSMISSION TYPE SOLAR CELL AND METHOD FOR PRODUCING THE SAME
    4.
    发明申请
    LIGHT TRANSMISSION TYPE SOLAR CELL AND METHOD FOR PRODUCING THE SAME 有权
    光传输型太阳能电池及其制造方法

    公开(公告)号:US20100236619A1

    公开(公告)日:2010-09-23

    申请号:US12700063

    申请日:2010-02-04

    IPC分类号: H01L31/00 H01L31/18

    摘要: The present invention provides a light transmission type solar cell excellent in both power generation efficiency and light transparency, and also provides a method for producing that solar cell. The solar cell of the present invention comprises a photoelectric conversion layer, a light-incident side electrode layer, and a counter electrode layer. The incident side electrode layer is provided with plural openings bored through the layer, and has a thickness of 10 nm to 200 nm. Each of the openings occupies an area of 80 nm2 to 0.8 μm2, and the opening ratio is in the range of 10% to 66%. The transmittance of the whole cell is 5% or more at 700 nm wavelength. The incident side electrode layer can be formed by etching fabrication with a stamper. In the etching fabrication, a mono-particle layer of fine particles or a dot pattern formed by self-assembled block copolymer can be used as a mask.

    摘要翻译: 本发明提供一种发光效率和光透射性优异的透光型太阳能电池,并且还提供一种太阳能电池的制造方法。 本发明的太阳能电池包括光电转换层,光入射侧电极层和对电极层。 入射侧电极层设置有穿过层的多个开口,并且具有10nm至200nm的厚度。 每个开口占据80nm 2至0.8μm2的面积,并且开口率在10%至66%的范围内。 在700nm波长下,全细胞的透射率为5%以上。 入射侧电极层可以通过用压模进行蚀刻制造来形成。 在蚀刻制造中,可以使用通过自组装嵌段共聚物形成的细颗粒的单粒子层或点图案作为掩模。

    LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF
    5.
    发明申请
    LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 审中-公开
    具有高分子结构的发光金属电极及其制备方法

    公开(公告)号:US20130057138A1

    公开(公告)日:2013-03-07

    申请号:US13669793

    申请日:2012-11-06

    IPC分类号: H01J1/54

    摘要: The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

    摘要翻译: 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续,90%以上的金属部分以不大于可见波长的1/3的直线长度线性地继续线性地继续使用,在380nm至780nm中使用。 这些开口的平均直径在入射光的波长不小于10nm且不大于1/3的范围内,并且开口中心之间的间距不小于平均直径,不大于平均直径的1/2 入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。

    LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF
    6.
    发明申请
    LIGHT-TRANSMITTING METAL ELECTRODE HAVING HYPERFINE STRUCTURE AND PROCESS FOR PREPARATION THEREOF 有权
    具有高分子结构的发光金属电极及其制备方法

    公开(公告)号:US20090079322A1

    公开(公告)日:2009-03-26

    申请号:US12187653

    申请日:2008-08-07

    IPC分类号: H01J1/54 H01B13/00 B05D5/12

    摘要: The present invention provides a metal electrode transparent to light. The metal electrode comprises a transparent substrate and a metal electrode layer composed of a metal part and plural openings. The metal electrode layer continues without breaks, and 90% or more of the metal part continues linearly without breaks by the openings in a straight length of not more than ⅓ of the visible wavelength to use in 380 nm to 780 nm. The openings have an average diameter in the range of not less than 10 nm and not more than ⅓ of the wavelength of incident light, and the pitches between the centers of the openings are not less than the average diameter and not more than ½ of the wavelength of incident light. The metal electrode layer has a thickness in the range of not less than 10 nm and not more than 200 nm.

    摘要翻译: 本发明提供对光透明的金属电极。 金属电极包括透明基板和由金属部分和多个开口组成的金属电极层。 金属电极层不间断地继续,90%以上的金属部分以不超过可见波长的1/3的直线长度线性地继续直线而不断裂,用于380nm至780nm。 这些开口的平均直径在入射光的波长的10nm以上且1/3以下的范围内,开口的中心之间的间距不小于平均直径,不大于1/2 的入射光波长。 金属电极层的厚度在10nm以上且200nm以下的范围。