公开(公告)号：US20180175109A1

公开(公告)日：2018-06-21

申请号：US15796919

申请日：2017-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hye-jin CHOI ,  Jung-ik OH ,  Bok-yeon WON ,  Gwang-hyun BAEK

IPC: H01L27/24 ,  H01L45/00 ,  G11C13/00

CPC classification number: H01L27/2463 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/35 ,  G11C2213/51 ,  G11C2213/52 ,  G11C2213/72 ,  G11C2213/73 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2427 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/126 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/148

Abstract: A variable resistance memory device including a first electrode line; a cell structure including a variable resistance layer on the first electrode line and a first blocking layer protecting the variable resistance layer; and a second electrode line on the cell structure, wherein the first blocking layer is on at least one of an upper surface, a lower surface, and the upper and lower surfaces of the variable resistance layer, and the first blocking layer includes a metal layer or a carbon-containing conductive layer.

公开(公告)号：US20170062190A1

公开(公告)日：2017-03-02

申请号：US15132506

申请日：2016-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-hyun LEE ,  Jun-ho YOON ,  Jung-hyun CHO ,  Bok-yeon WON ,  Tae-hwa KIM

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32532 ,  H01J37/32027 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32146

Abstract: A plasma generation apparatus is provided. The plasma generation apparatus includes a chamber defining a reaction space that can be isolated from an external environment, an upper electrode provided in an upper portion of the chamber, a lower electrode provided in a lower portion of the chamber, a sidewall electrode provided at a sidewall of the chamber, a radio frequency (RF) pulse power supplier configured to supply RF pulse power to at least one selected from the upper electrode and the lower electrode, and a direct current (DC) pulse power supplier configured to supply DC pulse power to the sidewall electrode.

Abstract translation: 提供了一种等离子体产生装置。 等离子体产生装置包括限定可与外部环境隔离的反应空间的室，设置在室的上部的上电极，设置在室的下部的下电极，设置在室 腔室的侧壁，被配置为向从上部电极和下部电极中选择的至少一个提供RF脉冲功率的射频（RF）脉冲电力供给器，以及被配置为提供直流脉冲功率的直流（DC）脉冲电源 到侧壁电极。