公开(公告)号：US20170110316A1

公开(公告)日：2017-04-20

申请号：US15237646

申请日：2016-08-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mi-hyun PARK ,  Jung-min OH ,  Kyoung-hwan KIM ,  In-gi KIM ,  Hyo-san LEE ,  Ji-hoon JEONG ,  Kyoung-seob KIM ,  Seok-hoon KIM

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/161 ,  H01L29/16 ,  C11D11/00 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66 ,  C11D1/29 ,  H01L29/78 ,  H01L29/08

CPC classification number: C11D11/0047 ,  C11D1/146 ,  C11D1/22 ,  C11D1/29 ,  H01L21/02068 ,  H01L21/02071 ,  H01L21/67051 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66795

Abstract: A method of cleaning a substrate includes providing the substrate, the substrate including a metal material film, performing physical cleaning of the substrate, performing chemical cleaning of the substrate, and drying a surface of the substrate. Performing the chemical cleaning includes supplying a chemical cleaning solution including an anionic surfactant at a concentration that is equal to or greater than a critical micelle concentration (CMC) onto the surface of the substrate.

公开(公告)号：US20180104792A1

公开(公告)日：2018-04-19

申请号：US15602256

申请日：2017-05-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-ki HONG ,  Yung-jun KIM ,  Sung-oh PARK ,  Hyo-san LEE ,  Joo-han LEE ,  Kyu-min Oh ,  Sun-gyu PARK ,  Seh-kwang LEE ,  Chan-ki YANG

IPC: B24B53/017 ,  B24B37/04 ,  B24B37/005 ,  H01L21/768 ,  H01L21/321 ,  H01L21/66

CPC classification number: B24B53/017 ,  B24B37/005 ,  B24B37/042 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76877 ,  H01L22/12 ,  H01L22/20

Abstract: A chemical mechanical polishing (CMP) method includes preparing a polishing pad, determining a first load to be applied to a conditioning disk during conditioning of the polishing pad and a first indentation depth at which tips of the conditioning disk are inserted into the polishing pad when the first load is applied to the conditioning disk, preparing a conditioning disk, and positioning the conditioning disk on the polishing pad and conditioning a surface of the polishing pad by using the conditioning disk while applying the first load to the conditioning disk.

公开(公告)号：US20220025261A1

公开(公告)日：2022-01-27

申请号：US17496174

申请日：2021-10-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-ah KIM ,  Young-chan KIM ,  Hyo-san LEE ,  Hoon HAN ,  Jin-uk LEE ,  Jung-hun LIM ,  Ik-hee KIM

IPC: C09K13/04 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.

公开(公告)号：US20200216758A1

公开(公告)日：2020-07-09

申请号：US16565690

申请日：2019-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-ah KIM ,  Young-chan KIM ,  Hyo-san LEE ,  Hoon HAN ,  Jin-uk LEE ,  Jung-hun LIM ,  Ik-hee KIM

IPC: C09K13/04 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8234

Abstract: An etchant composition and a method of fabricating a semiconductor device, the composition including an inorganic acid; about 0.01 parts by weight to about 0.5 parts by weight of colloidal silica; about 0.01 parts by weight to about 30 parts by weight of an ammonium-based additive; and about 20 parts by weight to about 50 parts by weight of a solvent, all parts by weight being based on 100 parts by weight of the inorganic acid.