公开(公告)号：US20170327941A1

公开(公告)日：2017-11-16

申请号：US15395016

申请日：2016-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woo-Jin KIM ,  Ki-Woong KIM ,  Joon-Myoung LEE

IPC: C23C14/34 ,  C23C14/08 ,  C23C14/35

CPC classification number: C23C14/3464 ,  C23C14/081 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/345 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3423

Abstract: A sputtering apparatus includes a chamber configured to provide a space where a deposition process is performed on a substrate, a substrate holder configured to support the substrate within the chamber, and at least one turret-type target assembly located over the substrate, including a plurality of targets mounted thereon and adapted to operatively rotate by a predetermined angle about its longitudinal axis such that any one of the targets is off-axis aligned with respect to a film-deposited surface of the substrate.

公开(公告)号：US20200136020A1

公开(公告)日：2020-04-30

申请号：US16727986

申请日：2019-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Sung PARK ,  Woo-Jin KIM ,  Jeong-Heon PARK ,  Se-Chung OH ,  Joon-Myoung LEE ,  Hyun CHO

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/10

Abstract: The methods of manufacturing an MRAM device and MRAM devices are provided. The methods may include forming a first electrode on an upper surface of a substrate, forming a first magnetic layer on the first electrode, forming a tunnel barrier structure on the first magnetic layer, forming a second magnetic layer on the tunnel barrier structure, and forming a second electrode on the second magnetic layer. The tunnel barrier structure may include a first tunnel barrier layer and a second tunnel barrier layer that are sequentially stacked on the first magnetic layer and may have different resistivity distributions from each other along a horizontal direction that may be parallel to the upper surface of the substrate.

公开(公告)号：US20200255934A1

公开(公告)日：2020-08-13

申请号：US16862791

申请日：2020-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joon-Myoung LEE ,  Yong-Sung PARK ,  Whan-Kyun KIM ,  Se-Chung OH ,  Young-Man JANG

IPC: C23C14/34 ,  H01J37/32 ,  C23C16/455

Abstract: A substrate processing apparatus including a chamber accommodating a substrate; a substrate support in the chamber, the substrate support supporting the substrate; a gas injector to inject an oxidizing gas for oxidizing a metal layer to be disposed on the substrate; a cooler under the substrate to cool the substrate; a target mount disposed on the substrate, the target mount including a target for performing a sputtering process; and a blocker between the target and the gas injector, the blocker shielding the target from the oxidizing gas injected from the gas injector.

公开(公告)号：US20190097124A1

公开(公告)日：2019-03-28

申请号：US16101243

申请日：2018-08-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-Myoung LEE ,  Ju-Hyun KIM ,  Jung-Hwan PARK ,  Se-Chung OH ,  Young-Man JANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: An MRAM device includes a lower electrode, a blocking pattern on the lower electrode and including a binary metal boride in an amorphous state, a seed pattern on the blocking pattern and including a metal, an MTJ structure on the seed pattern, and an upper electrode on the MTJ structure.