公开(公告)号：US20250169371A1

公开(公告)日：2025-05-22

申请号：US18676799

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KI WOONG KIM ,  JEONGCHUN RYU ,  KWANG SEOK KIM ,  SEONGGEON PARK ,  SEUNGJAE LEE

IPC: H10N50/10 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetic tunnel junction element including: a pinned layer and a free layer facing each other; a buffer layer on the pinned layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, wherein the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re or Ta, the auxiliary layer includes W, Mo, or Ta.

公开(公告)号：US20190198296A1

公开(公告)日：2019-06-27

申请号：US16104496

申请日：2018-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： SIQING LU ,  YEONGKWANG LEE ,  KEESOO PARK ,  SEUNGJAE LEE ,  JINHYUK CHOI

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/3222 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32238 ,  H01J37/32449 ,  H01J37/32513 ,  H01J37/32834 ,  H01J2237/3341 ,  H01L21/67011

Abstract: Disclosed are plasma processing apparatuses and methods of manufacturing semiconductor devices. The plasma processing apparatus includes a chamber including lower and upper housings, a window in the upper housing, an antenna for generating plasma of a first gas, wherein the antenna is disposed on the window and in the upper housing, a first pump for exhausting the first gas between the window and the lower housing, wherein the first pump is associated with the lower housing, a power supply for providing a power output, wherein the power supply is connected to the antenna through a first cavity of the upper housing, and a second pump for pumping a second gas between the window and in the upper housing so as to hold the antenna and the window onto an inside wall of the upper housing.

公开(公告)号：US20140026232A1

公开(公告)日：2014-01-23

申请号：US13941568

申请日：2013-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEUNGJAE LEE ,  JINYUB LEE

IPC: G06F12/14

CPC classification number: G06F12/14 ,  G06F12/1433 ,  G06F21/78 ,  G06F21/79 ,  G06F2212/202

Abstract: A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.

Abstract translation: 非易失性存储器件包括存储单元阵列和通过位线连接到存储单元阵列的读/写电路。 非易失性存储器件的读取方法包括接收安全读取请求，接收安全信息，以及响应于安全读取请求执行安全读取操作。 安全读取操作包括使用读/写电路从存储单元阵列读取安全数据，将读取的安全数据存储在寄存器中，使用接收到的安全信息对存储在寄存器中的读取的安全数据执行安全解码，重置 读/写电路，并输出安全解码的结果。