公开(公告)号：US20180174802A1

公开(公告)日：2018-06-21

申请号：US15804304

申请日：2017-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungkyu LIM ,  DOUGYONG SUNG ,  Myoung Soo PARK ,  Jaehoon KIM ,  Eunyoung LEE ,  Seiwon CHUNG ,  YOSHIHISA HIRANO

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32119 ,  H01J37/3211 ,  H01J37/32183 ,  H01J37/32642 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6831

Abstract: A dielectric window, a plasma system including the same, a method of fabricating the same, and a method of manufacturing a semiconductor device are provided. The method of manufacturing the semiconductor device may include steps of providing a substrate in a plasma chamber, performing a plasma treatment on a surface of the substrate, and removing the substrate from the plasma chamber, wherein the plasma chamber comprises the dielectric window. The dielectric window may include a dielectric material disk with at least one void, a filler filled in the void to allow the dielectric material disk to have a flat surface, and a passivation layer provided on the filler and the dielectric material disk.

公开(公告)号：US20160343547A1

公开(公告)日：2016-11-24

申请号：US15148440

申请日：2016-05-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungkyu LIM ,  Myoung Soo PARK ,  Dougyong SUNG

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/27 ,  C23C16/50 ,  H01L21/683 ,  H01L21/67

CPC classification number: H01J37/32642 ,  C23C16/26 ,  C23C16/27 ,  C23C16/4404 ,  C23C16/4581 ,  C23C16/50 ,  H01J37/32477 ,  H01J37/32853 ,  H01L21/6831 ,  H01L21/68757

Abstract: Provided is a substrate processing system including a plasma processing module and a protection layer coated on the plasma processing module. The protection layer may include a diamond film.

Abstract translation: 提供了包括等离子体处理模块和涂覆在等离子体处理模块上的保护层的衬底处理系统。 保护层可以包括金刚石膜。

公开(公告)号：US20170140937A1

公开(公告)日：2017-05-18

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong SUNG ,  Sejin OH ,  Je-Hun WOO ,  Hyunju LEE ,  Seungkyu LIM ,  Kiho HWANG

IPC: H01L21/263 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.