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公开(公告)号：US20160099057A1
公开(公告)日：2016-04-07
申请号：US14507245
申请日：2014-10-06
发明人： Gautam Dusija , Chris Avila , Jonathan Hsu , Neil Darragh , Bo Lei
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3459 , G11C29/028
摘要： Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.
摘要翻译： 可以提供适应调整组提前的系统，装置和方法。 修剪设置的进步可能会随着时间的推移而发生变化。 半导体存储器的单元可以具有第一充电水平并且被编程为具有第一调整组。 可以通过将第一充电电平升高到对应于用第二调整组编程的单元的第二充电水平来重新编程单元。
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公开(公告)号：US09047970B2
公开(公告)日：2015-06-02
申请号：US14065092
申请日：2013-10-28
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3427 , G11C16/3445 , G11C16/3459
摘要： In a non-volatile storage system, a reduced voltage is provided on a selected word line during a sensing operation, using down coupling from one or more adjacent word lines. Voltages of one or more adjacent word lines of a selected word line are driven down while a voltage of the selected word line is floated. Capacitive coupling from the one or more adjacent word lines to the selected word line reduces the voltage of the selected word line. The capacitive coupling can be provided during a read, a program-verify test or an erase-verify test. The erase-verify test can be performed on cells of even-numbered word lines while capacitive coupling is provided by odd-numbered word lines, or on cells of odd-numbered word lines while capacitive coupling is provided by even-numbered word lines. Voltages of non-adjacent word lines can be provided at fixed, pass voltage levels.
摘要翻译： 在非易失性存储系统中，使用来自一个或多个相邻字线的下联耦合，在感测操作期间在所选字线上提供降低的电压。 所选字线的一个或多个相邻字线的电压在选定字线的电压浮动的同时被驱动。 从所述一个或多个相邻字线到所选字线的电容耦合降低了所选字线的电压。 可以在读取，程序验证测试或擦除验证测试期间提供电容耦合。 在偶数字线提供电容耦合的情况下，可以对偶数字线的单元执行擦除验证测试，或者在偶数字线提供电容耦合的情况下，对奇数字线提供电容耦合，或在奇数字线的单元上进行擦除验证测试。 可以以固定的通过电压电平提供非相邻字线的电压。
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3.发明申请Block And Page Level Bad Bit Line And Bits Screening Methods For Program Algorithm 有权块和页级差位线和位筛选方法的程序算法公开(公告)号：US20140082437A1
公开(公告)日：2014-03-20
申请号：US13622765
申请日：2012-09-19
发明人： Jun Wan , Bo Lei , Feng Pan , Yongke Sun
CPC分类号： G11C16/349 , G11C7/1006 , G11C11/5628 , G11C11/5635 , G11C11/5642 , G11C16/00 , G11C16/10 , G11C16/24 , G11C16/3409 , G11C16/3413 , G11C16/3418 , G11C16/3422 , G11C16/3431 , G11C16/3445 , G11C16/345 , G11C16/3459 , G11C29/025 , G11C29/44 , G11C2029/1204
摘要： A programming process evaluates NAND strings of a block to detect a defective NAND string, e.g., a NAND string with a defective storage element. Status bits can be stored which identify the defective NAND string. Original data which is to be written in the NAND string is modified so that programming of the defective NAND string does not occur. For example, a bit of write data which requires a storage element in the defective NAND string to be programmed to a higher data state is modified (e.g., flipped) so that no programming of the storage element is required. Subsequently, when a read operation is performed, the flipped bits are flipped back to their original value, such as by using error correction code decoding. In an erase process, a count of defective NAND strings is made and used to adjust a pass condition of a verify test.
摘要翻译： 编程过程评估块的NAND串以检测有缺陷的NAND串，例如具有缺陷存储元件的NAND串。 可以存储识别有缺陷的NAND串的状态位。 要写入NAND串的原始数据被修改，使得不会发生有缺陷的NAND串的编程。 例如，将要编程到较高数据状态的有缺陷的NAND串中的存储元件的一些写入数据修改（例如翻转），使得不需要存储元件的编程。 随后，当执行读取操作时，例如通过使用纠错码解码，将翻转的位翻转回其原始值。 在擦除处理中，进行有缺陷的NAND串的计数并用于调整验证测试的通过条件。
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公开(公告)号：US10353598B2
公开(公告)日：2019-07-16
申请号：US14507321
申请日：2014-10-06
发明人： Jianmin Huang , Bo Lei , Jun Wan , Niles Yang
摘要： Systems, apparatuses, and methods are provided that refresh data in a memory. Data is programmed into the memory. After which, part or all of the data may be refreshed. The refresh of the data may be different from the initial programming of the data in one or more respects. For example, the refresh of the data may include fewer steps than the programming of the data and may be performed without erasing a section of memory. Further, the refresh of the data may be triggered in one of several ways. For example, after programming the data, the data may be analyzed for errors. Based on the number of errors found, the data may be refreshed.
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公开(公告)号：US09548124B1
公开(公告)日：2017-01-17
申请号：US14882858
申请日：2015-10-14
发明人： Arash Hazeghi , Gerrit Jan Hemink , Dana Lee , Henry Chin , Bo Lei , Zhenming Zhou
CPC分类号： G11C16/20 , G11C7/14 , G11C11/5628 , G11C16/0483 , G11C16/10 , G11C16/34 , G11C16/3427 , G11C16/3495 , G11C29/021 , G11C29/028
摘要： A memory device includes memory cells arranged in word lines. Due to variations in the fabrication process, with width and spacing between word lines can vary, resulting in widened threshold voltage distributions. In one approach, a programming parameter is optimized for each word line based on a measurement of the threshold voltage distributions in an initial programming operation. An adjustment to the programming parameter of a word line can be based, e.g., on measurements from adjacent word lines, and a position of the word line in a set of word lines. The programming parameter can include a programming mode such as a number of programming passes. Moreover, the programming parameters from one set of word lines can be used for another set of word lines having a similar physical layout due to the variations in the fabrication process.
摘要翻译： 存储器件包括以字线布置的存储器单元。 由于制造过程的变化，字线之间的宽度和间距可以变化，导致加宽的阈值电压分布。 在一种方法中，基于初始编程操作中的阈值电压分布的测量，针对每个字线优化编程参数。 对字线的编程参数的调整可以基于例如来自相邻字线的测量值和字线集合中的字线的位置。 编程参数可以包括编程模式，例如多个编程遍。 此外，由于制造过程的变化，来自一组字线的编程参数可以用于具有类似物理布局的另一组字线。
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公开(公告)号：US20160098216A1
公开(公告)日：2016-04-07
申请号：US14507321
申请日：2014-10-06
发明人： Jianmin Huang , Bo Lei , Jun Wan , Niles Yang
CPC分类号： G06F3/0619 , G06F3/064 , G06F3/0688 , G06F11/073 , G06F11/076 , G06F11/079 , G06F11/1072 , G11C11/5628 , G11C16/0483
摘要： Systems, apparatuses, and methods are provided that refresh data in a memory. Data is programmed into the memory. After which, part or all of the data may be refreshed. The refresh of the data may be different from the initial programming of the data in one or more respects. For example, the refresh of the data may include fewer steps than the programming of the data and may be performed without erasing a section of memory. Further, the refresh of the data may be triggered in one of several ways. For example, after programming the data, the data may be analyzed for errors. Based on the number of errors found, the data may be refreshed.
摘要翻译： 提供了刷新存储器中的数据的系统，装置和方法。 数据被编程到存储器中。 之后，可以刷新部分或全部数据。 数据的刷新可能与一个或多个方面的数据的初始编程不同。 例如，数据的刷新可以包括比数据的编程更少的步骤，并且可以执行而不擦除存储器的一部分。 此外，数据的刷新可以以几种方式之一触发。 例如，在对数据进行编程之后，可以分析数据的错误。 根据找到的错误数量，可以刷新数据。
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公开(公告)号：US20150091637A1
公开(公告)日：2015-04-02
申请号：US14041522
申请日：2013-09-30
发明人： Feng Pan , Jonathan Huynh , Sung-En Wang , Bo Lei
IPC分类号： H02M3/07
CPC分类号： H02M3/07 , H02M2003/076
摘要： Techniques are presented for improving the efficiency of charge pumps. A charge pump, or a stage of a charge pump, provides its output through a pass gate. For example, this could be a charge pump of a voltage doubler type, where the output is supplied through pass gate transistors whose gates are connected to receive the output of an auxiliary section, also of a voltage doubler type of design. The waveforms provided to the gates of the pass gate transistors are modified so that their low values are offset to a higher value to take into account the threshold voltage of the pass gate transistors. In a voltage doubler based example, this can be implemented by way of introducing diodes into each leg of the auxiliary section.
摘要翻译： 提出了提高电荷泵效率的技术。 电荷泵或电荷泵的级通过闸门提供其输出。 例如，这可以是倍压器类型的电荷泵，其中输出通过栅极晶体管提供，栅极晶体管的栅极连接以接收辅助部分的输出，也是倍压器类型的设计。 提供给通过栅极晶体管的栅极的波形被修改，使得它们的低值偏移到更高的值以考虑到通过栅极晶体管的阈值电压。 在基于倍压器的示例中，这可以通过将二极管引入辅助部分的每个支路来实现。
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公开(公告)号：US08937835B2
公开(公告)日：2015-01-20
申请号：US13783781
申请日：2013-03-04
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3427
摘要： A apparatus and process for reading data from non-volatile storage includes applying a read compare signal to a selected data memory cell of a NAND string, applying a first set of one or more read pass voltages to unselected data memory cells at both ends of the NAND string and applying a second set of one or more read pass voltages to unselected data memory cells between both ends of the NAND string and on both sides of the selected data memory cell. The second set of one or more read pass voltages are all higher than the first set of one or more read pass voltages.
摘要翻译： 用于从非易失性存储器读取数据的装置和处理包括将读取的比较信号应用于NAND串的所选择的数据存储单元，将第一组一个或多个读取通过电压施加到所述NAND串的两端的未选择的数据存储单元 NAND串，并且将第二组一个或多个读取通过电压施加到NAND串的两端和所选数据存储单元的两侧之间的未选择的数据存储单元。 第一组一个或多个读通道电压都高于一个或多个读通道电压的第一组。
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公开(公告)号：US20140084936A1
公开(公告)日：2014-03-27
申请号：US13628465
申请日：2012-09-27
发明人： Feng Pan , Jun Wang , Shankar Guhados , Bo Lei
CPC分类号： G01R19/0092 , G11C29/025 , G11C2029/1202 , G11C2029/5006
摘要： Techniques are presented for determining current levels based on the behavior of a charge pump system while driving a load under regulation. While driving the load under regulation, the number of pump clocks during a set interval is counted. This can be compared to a reference that can be obtained, for example, from the numbers of cycles needed to drive a known load current over an interval of the duration. By comparing the counts, the amount of current being drawn by the load can be determined. This technique can be applied to determining leakage from circuit elements, such as word lines in a non-volatile memory.
摘要翻译： 提出了基于电荷泵系统在驱动负载调节时的行为来确定电流水平的技术。 在调节负载的情况下，在设定的间隔期间计数泵时钟数。 这可以与例如从持续时间间隔内驱动已知负载电流所需的周期数获得的参考值进行比较。 通过比较计数，可以确定由负载绘制的电流量。 该技术可以用于确定诸如非易失性存储器中的字线的电路元件的泄漏。
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公开(公告)号：US09589645B2
公开(公告)日：2017-03-07
申请号：US14507245
申请日：2014-10-06
发明人： Gautam Dusija , Chris Avila , Jonathan Hsu , Neil Darragh , Bo Lei
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3459 , G11C29/028
摘要： Systems, apparatuses, and methods may be provided that adapt to trim set advancement. Trim set advancement may be a change in trim sets over time. A cell of a semiconductor memory may have a first charge level and be programmed with a first trim set. The cell may be reprogrammed by raising the first charge level to a second charge level that corresponds to the cell programmed with a second trim set.
摘要翻译： 可以提供适应调整组提前的系统，装置和方法。 修剪设置的进步可能会随着时间的推移而发生变化。 半导体存储器的单元可以具有第一充电水平并且被编程为具有第一调整组。 可以通过将第一充电电平升高到对应于用第二调整组编程的单元的第二充电水平来重新编程单元。
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