公开(公告)号：US20240420936A1

公开(公告)日：2024-12-19

申请号：US18818710

申请日：2024-08-29

Applicant: SEMES Co., Ltd.

Inventor： Hyo Seong Seong ,  Tae Hoon Jo ,  Jeong Yeon Hwang ,  Jae Hong Min

IPC: H01J37/32

Abstract: Provided are an impedance control apparatus for automatically compensating impedance by predicting the occurrence of wear on a ring assembly, and a substrate treating system having the same. The substrate treating system includes a housing for providing a space for treating a substrate, a substrate support member installed inside the housing and for supporting the substrate, a plasma generating unit for generating plasma inside the housing, a ring assembly disposed in circumference of the substrate, and an impedance control unit for controlling the impedance around the ring assembly and automatically compensating the impedance by predicting the occurrence of wear of the ring assembly.

公开(公告)号：US12051565B2

公开(公告)日：2024-07-30

申请号：US17527128

申请日：2021-11-15

Applicant: SEMES CO., LTD.

Inventor： Young Kuk Kim ,  Tae Hoon Jo ,  Goon Ho Park ,  Ja Myung Gu

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3244

Abstract: Disclosed is an apparatus for treating a substrate. The apparatus includes: an RF power supply; a process chamber which performs plasma processing by using power applied from the RF power supply; and an impedance matching unit which is disposed between the RF power supply and the process chamber and performs matching, in which the RF power supply includes a first sensor measuring impedance in a direction of the process chamber and the impedance matching unit, and the impedance matching unit performs impedance matching by reflecting impedance measured in the RF power supply through the first sensor.

公开(公告)号：US12276684B2

公开(公告)日：2025-04-15

申请号：US17992972

申请日：2022-11-23

Applicant: SEMES CO., LTD.

Inventor： Tae Hoon Jo ,  Hyo Seong Seong ,  Ji Hyun Kim ,  Ja Myung Gu

IPC: G01R27/16

Abstract: Proposed are a method and an apparatus for determining a cable length for plasma processing equipment. More particularly, proposed is a method of determining a length of a power supply cable for plasma processing equipment that performs plasma processing through power supply at radio frequencies (RF) of several tens of MHz or more.

公开(公告)号：US20220139683A1

公开(公告)日：2022-05-05

申请号：US17509200

申请日：2021-10-25

Applicant: SEMES Co., Ltd.

Inventor： Hyo Seong Seong ,  Tae Hoon Jo ,  Jeong Yeon Hwang ,  Jae Hong Min

IPC: H01J37/32

Abstract: Provided are an impedance control apparatus for automatically compensating impedance by predicting the occurrence of wear on a ring assembly, and a substrate treating system having the same. The substrate treating system includes a housing for providing a space for treating a substrate, a substrate support member installed inside the housing and for supporting the substrate, a plasma generating unit for generating plasma inside the housing, a ring assembly disposed in circumference of the substrate, and an impedance control unit for controlling the impedance around the ring assembly and automatically compensating the impedance by predicting the occurrence of wear of the ring assembly.

公开(公告)号：US20230215693A1

公开(公告)日：2023-07-06

申请号：US18147480

申请日：2022-12-28

Applicant: SEMES CO., LTD.

Inventor： Chan Yong AN ,  Ja Myung Gu ,  Sang Moon Yoo ,  Tae Hoon Jo

IPC: H01J37/32

CPC classification number: H01J37/32155 ,  H01J37/32642 ,  H01J37/32091 ,  H01J37/32522 ,  H01J2237/334

Abstract: The inventive concept provides a substrate processing apparatus. The substrate processing apparatus may include a chamber having an interior space, a support unit that supports a substrate in the interior space, a ring unit disposed on an edge region of the support unit when viewed from above, an impedance control unit electrically connected to the ring unit to control a flow or density of plasma in an edge region of the substrate and a filter unit disposed between the ring unit and the impedance control unit.

公开(公告)号：US11437220B2

公开(公告)日：2022-09-06

申请号：US16907208

申请日：2020-06-20

Applicant: SEMES CO., LTD.

Inventor： Ja Myung Gu ,  Shant Arakel Yan ,  Jung Mo Gu ,  Tae Hoon Jo

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber providing space for plasma generation, a chuck member provided in the processing chamber and supporting a substrate, at least two RF power sources providing RF power of different frequencies to the chuck member, a ring member provided to surround the chuck member, an edge electrode arranged in the ring member to be electrically insulated from the chuck member, and a variable impedance circuit being electrically connected to the edge electrode. The variable impedance circuit includes an adjustable impedance configured to control a potential of the edge electrode and a high-frequency stop circuit configured to block high-frequency power from being transmitted to the adjustable impedance.