Solid-state imaging device, method of driving the same, and electronic apparatus

    公开(公告)号:US10277848B2

    公开(公告)日:2019-04-30

    申请号:US15540384

    申请日:2016-01-04

    Abstract: The present technology relates to a solid-state imaging device, a method of driving the solid-state imaging device, and an electronic apparatus by which pixels can be read effectively. The solid-state imaging device includes a readout unit that performs a common-source operation or a source follower operation with respect to pixels to read a signal for each column. According to a level of illumination, the readout unit performs a common-source readout operation to reset a floating diffusion region and read an electric charge transferred from a photoelectric transducer and held in the floating diffusion region, and performs a source follower readout operation to reset the floating diffusion region and read the electric charge transferred from the photoelectric transducer and held in the floating diffusion region. The present technology is applicable to a solid-state imaging device such as a CMOS image sensor.

    Solid state imaging device, driving method of solid state imaging device, and electronic device having a driving unit so that a potential of a drain of a charge reset unit is controlled
    7.
    发明授权
    Solid state imaging device, driving method of solid state imaging device, and electronic device having a driving unit so that a potential of a drain of a charge reset unit is controlled 有权
    固态成像装置,固态成像装置的驱动方法和具有驱动单元的电子装置,使得电荷重置单元的漏极的电位被控制

    公开(公告)号:US09143712B2

    公开(公告)日:2015-09-22

    申请号:US13969097

    申请日:2013-08-16

    Inventor: Yorito Sakano

    CPC classification number: H04N5/378 H04N5/35518 H04N5/3745

    Abstract: There is provided a solid state imaging device including a photoelectric conversion unit that performs photoelectric conversion of converting incident light into charges and accumulates the charges, a charge-voltage conversion unit that converts the charges which have been subjected to the photoelectric conversion by the photoelectric conversion unit into a voltage, a charge transfer unit that transfers charges to the charge-voltage conversion unit, a charge reset unit that resets charges of the charge-voltage conversion unit, and a driving unit that performs driving such that a potential of a drain of the charge reset unit is controlled so that the charges are accumulated in the photoelectric conversion unit and the charge-voltage conversion unit up to a saturation level, and then the photoelectric conversion unit is subject to light exposure.

    Abstract translation: 提供了一种固态成像装置,其包括光电转换单元,该光电转换单元执行将入射光转换成电荷并积累电荷的光电转换;电荷 - 电压转换单元,其通过光电转换转换经过光电转换的电荷 单元转换为电压,将电荷转移到充电电压转换单元的电荷转移单元,重置充电电压转换单元的电荷的电荷重置单元和执行驱动的驱动单元,使得漏极的电位 控制电荷重置单元,使电荷累积在光电转换单元和电荷 - 电压转换单元中达到饱和水平,然后光电转换单元进行曝光。

    SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
    8.
    发明申请
    SOLID-STATE IMAGING DEVICE, METHOD OF PRODUCING SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS 有权
    固态成像装置,制造固态成像装置和电子装置的方法

    公开(公告)号:US20130200479A1

    公开(公告)日:2013-08-08

    申请号:US13749393

    申请日:2013-01-24

    Abstract: There is provided a solid-state imaging device including a pixel array portion in which multiple unit pixels are arranged on a semiconductor substrate, the multiple unit pixels each including a photoelectric conversion portion generating and accumulating a light charge based on a quantity of received light and a charge accumulation portion accumulating the light charge, wherein at least part of an electrode closer to an incidence side on which light enters the unit pixel of the charge accumulation portion, is formed with a metal film functioning as a light blocking film.

    Abstract translation: 提供了一种固态成像装置,其包括其中多个单位像素布置在半导体衬底上的像素阵列部分,所述多个单位像素包括基于接收光量产生并积累光电荷的光电转换部分, 累积光电荷的电荷累积部分,其中更靠近光入射到电荷累积部分的单位像素的入射侧的电极的至少一部分形成有用作遮光膜的金属膜。

    Pixel circuit
    9.
    发明授权

    公开(公告)号:US10319777B2

    公开(公告)日:2019-06-11

    申请号:US15633587

    申请日:2017-06-26

    Inventor: Yorito Sakano

    Abstract: A pixel circuit includes a floating diffusion layer of a first conductivity-type between a drain/source of a second conductivity-type and a source/drain of the second conductivity-type. The source/drain and the drain/source touch the floating diffusion layer. A cathode of a photoelectric converter is electrically connected to the floating diffusion layer. An anode of the photoelectric converter touches the cathode. The cathode is of the first conductivity-type and the anode is of the second conductivity-type.

Patent Agency Ranking