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    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    1.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 审中-公开

    公开(公告)号：US20200350740A1

    公开(公告)日：2020-11-05

    申请号：US16876569

    申请日：2020-05-18

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/022 ,  H01S5/343 ,  H01S5/32

    Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

    INTELLIGENT VISIBLE LIGHT WITH A GALLIUM AND NITROGEN CONTAINING LASER SOURCE
    6.
    发明申请
    INTELLIGENT VISIBLE LIGHT WITH A GALLIUM AND NITROGEN CONTAINING LASER SOURCE 审中-公开

    公开(公告)号：US20190097722A1

    公开(公告)日：2019-03-28

    申请号：US15719455

    申请日：2017-09-28

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

    IPC: H04B10/116 ,  H01S5/343 ,  H01S5/22 ,  G02B27/09 ,  H01S5/00 ,  H04B10/50

    Abstract: A smart light source configured for visible light communication. The light source includes a controller comprising a modem configured to receive a data signal and generate a driving current and a modulation signal based on the data signal. Additionally, the light source includes a light emitter configured as a pump-light device to receive the driving current for producing a directional electromagnetic radiation with a first peak wavelength in the ultra-violet or blue wavelength regime modulated to carry the data signal using the modulation signal. Further, the light source includes a pathway configured to direct the directional electromagnetic radiation and a wavelength converter optically coupled to the pathway to receive the directional electromagnetic radiation and to output a white-color spectrum. Furthermore, the light source includes a beam shaper configured to direct the white-color spectrum for illuminating a target of interest and transmitting the data signal.

    Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
    7.
    发明授权
    Magnesium based gettering regions for gallium and nitrogen containing laser diode devices 有权

    公开(公告)号：US10199802B1

    公开(公告)日：2019-02-05

    申请号：US15728374

    申请日：2017-10-09

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  James W. Raring ,  Christiane Elsass

    IPC: H01S5/323 ,  H01S5/32 ,  H01S5/343

    Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

    Semiconductor laser diode on tiled gallium containing material
    8.
    发明授权
    Semiconductor laser diode on tiled gallium containing material 有权

    公开(公告)号：US10044170B1

    公开(公告)日：2018-08-07

    申请号：US15682148

    申请日：2017-08-21

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

    IPC: H01L21/302 ,  H01S5/00 ,  H01S5/343 ,  H01S5/042 ,  H01S5/02 ,  H01S5/028 ,  H01S5/32

    Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

    MANUFACTURABLE RGB LASER DIODE SOURCE
    9.
    发明申请
    MANUFACTURABLE RGB LASER DIODE SOURCE 有权
    可制造的RGB激光二极管源

    公开(公告)号：US20160372893A1

    公开(公告)日：2016-12-22

    申请号：US15180737

    申请日：2016-06-13

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

    IPC: H01S5/40 ,  H01S5/323 ,  H01S5/02 ,  H01L33/00

    CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L33/0045 ,  H01L33/0075 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

    Abstract translation: 通过形成覆盖第一和第二表面区域的第一和第二外延材料来制造多波长发光器件。 将第一和第二外延材料图案化以形成多个第一和第二外延骰子。 通过选择性地蚀刻释放区域，将第一多个外延骰子中的至少一个和第二多个外延骰子中的至少一个分别从第一和第二基板转移到载体晶片， 正在转印的骰子，并且选择性地将正在转印的每个外延骰子结合到载体晶片。 在载体晶片上处理转移的第一和第二外延晶片以形成能够发射至少第一波长和第二波长的多个发光器件。

    MANUFACTURABLE MULTI-EMITTER LASER DIODE
    10.
    发明申请
    MANUFACTURABLE MULTI-EMITTER LASER DIODE 有权
    可制造的多发射体激光二极管

    公开(公告)号：US20150229108A1

    公开(公告)日：2015-08-13

    申请号：US14600506

    申请日：2015-01-20

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

    IPC: H01S5/40 ,  H01S5/026 ,  H01S5/02 ,  H01S5/042 ,  H01S5/343 ,  H01S5/22

    CPC classification number: H01S5/4087 ,  H01S5/005 ,  H01S5/0202 ,  H01S5/0203 ,  H01S5/0215 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0218 ,  H01S5/0425 ,  H01S5/22 ,  H01S5/34333 ,  H01S5/4012 ,  H01S5/4031 ,  H01S5/4056 ,  H01S5/4093

    Abstract: A method for manufacturing a multi-emitter laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

    Abstract translation: 一种用于制造多发射体激光二极管器件的方法，包括提供具有表面区域并形成覆盖在表面区域上的外延材料的衬底，所述外延材料包括n型覆层区域，活性区域包括至少一层有源层， n型包层区域和覆盖有源层区域的p型覆层区域。 外延材料被图案化以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于第一间距。

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