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    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    3.
    发明申请
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 有权

    公开(公告)号：US20210359189A1

    公开(公告)日：2021-11-18

    申请号：US17321252

    申请日：2021-05-14

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Lucia ZULLINO ,  Andrea NOMELLINI ,  Luca SEGHIZZI ,  Luca ZANOTTI ,  Bruno MURARI ,  Martina SCOLARI

    IPC: H01L35/22 ,  H01L35/32 ,  H01L35/34

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    THERMOELECTRIC GENERATOR
    4.
    发明申请
    THERMOELECTRIC GENERATOR 有权

    公开(公告)号：US20210242387A1

    公开(公告)日：2021-08-05

    申请号：US17158904

    申请日：2021-01-26

    Applicant: STMICROELECTRONICS S.R.L.

    Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Luca ZANOTTI ,  Andrea NOMELLINI ,  Luca SEGHIZZI

    IPC: H01L35/32 ,  H01L35/34

    Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.

    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED
    7.
    发明公开
    METHOD OF FABRICATION OF AN INTEGRATED THERMOELECTRIC CONVERTER, AND INTEGRATED THERMOELECTRIC CONVERTER THUS OBTAINED 审中-公开

    公开(公告)号：US20230301191A1

    公开(公告)日：2023-09-21

    申请号：US18323262

    申请日：2023-05-24

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Paolo FERRARI ,  Flavio Francesco VILLA ,  Lucia ZULLINO ,  Andrea NOMELLINI ,  Luca SEGHIZZI ,  Luca ZANOTTI ,  Bruno MURARI ,  Martina SCOLARI

    IPC: H10N10/855 ,  H10N10/01 ,  H10N10/17

    CPC classification number: H10N10/855 ,  H10N10/01 ,  H10N10/17

    Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

    PROCESS FOR MANUFACTURING A COMBINED MICROELECTROMECHANICAL DEVICE AND CORRESPONDING COMBINED MICROELECTROMECHANICAL DEVICE
    8.
    发明申请
    PROCESS FOR MANUFACTURING A COMBINED MICROELECTROMECHANICAL DEVICE AND CORRESPONDING COMBINED MICROELECTROMECHANICAL DEVICE 有权

    公开(公告)号：US20220380203A1

    公开(公告)日：2022-12-01

    申请号：US17744312

    申请日：2022-05-13

    Applicant: STMICROELECTRONICS S.r.l.

    Inventor： Federico VERCESI ,  Luca SEGHIZZI ,  Laura OGGIONI ,  Lorenzo CORSO

    IPC: B81B7/02 ,  B81B7/00

    Abstract: A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

    MICRO ELECTRO MECHANICAL SYSTEM AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    MICRO ELECTRO MECHANICAL SYSTEM AND MANUFACTURING METHOD THEREOF 有权

    公开(公告)号：US20210265556A1

    公开(公告)日：2021-08-26

    申请号：US17181432

    申请日：2021-02-22

    Applicant: STMicroelectronics S.r.l.

    Inventor： Gianluca LONGONI ,  Luca SEGHIZZI

    IPC: H01L41/09 ,  H01L41/314 ,  H01L41/27 ,  H01L41/08 ,  H01L41/18 ,  H02N2/18 ,  B81B3/00

    Abstract: A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.

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