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公开(公告)号：US20170271777A1
公开(公告)日：2017-09-21
申请号：US15614382
申请日：2017-06-05
Applicant: STMicroelectronics SA
Inventor： Baudouin Martineau , Olivier Richard , Didier Belot , Pierre Dautriche
CPC classification number: H01Q13/06 , H01P3/16 , Y10T29/49018 , Y10T29/4902
Abstract: A connector for a plastic waveguide includes a connector body having first and second openings aligned with one another. The first opening is configured to receive the plastic waveguide. A radio frequency (RF) antenna is positioned within the second opening of the connector body.
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公开(公告)号：US20220286149A1
公开(公告)日：2022-09-08
申请号：US17664987
申请日：2022-05-25
Applicant: STMICROELECTRONICS SA
Inventor： Pierre Dautriche , Sylvain Engels
Abstract: According to one aspect, an embodiment radio frequency receiver device comprises an input interface configured to receive a radio frequency signal of a given type and convert same into an electric signal, a detector configured to detect at least one voltage level in the electric signal, a pulse generator configured to generate at least one pulse train representative of the voltage levels detected, and a processing unit configured to determine the type of the radio frequency signal from the at least one pulse train.
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公开(公告)号：US11374597B2
公开(公告)日：2022-06-28
申请号：US17328612
申请日：2021-05-24
Applicant: STMicroelectronics SA
Inventor： Pierre Dautriche , Sylvain Engels
Abstract: According to one aspect, an embodiment radio frequency receiver device comprises an input interface configured to receive a radio frequency signal of a given type and convert same into an electric signal, a detector configured to detect at least one voltage level in the electric signal, a pulse generator configured to generate at least one pulse train representative of the voltage levels detected, and a processing unit configured to determine the type of the radio frequency signal from the at least one pulse train.
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公开(公告)号：US20140075726A1
公开(公告)日：2014-03-20
申请号：US14084394
申请日：2013-11-19
Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
Inventor： David Petit , Sylvain Joblot , Pierre Bar , Jean-Francois Carpentier , Pierre Dautriche
IPC: H03H3/02
CPC classification number: H03H3/02 , G01N29/022 , G02F1/133707 , H03H3/04 , H03H9/0028 , H03H9/02102 , H03H9/175 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.
Abstract translation: 一种制造晶片的方法，其上形成有谐振器，每个谐振器包括在半导体衬底上方的一叠层，其从衬底表面依次包括：布拉格反射镜; 由具有与所有其它堆叠层相反的符号的声速的温度系数的材料制成的补偿层; 和压电谐振器，该方法包括以下连续步骤：a）沉积补偿层; 和b）由于沉积方法而减小补偿层的厚度不等式，使得该层在每个谐振器的电平上具有相同的厚度，优于2％以内，优选在1％以内。
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Patent Agency Ranking
公开(公告)号：US11616516B2
公开(公告)日：2023-03-28
申请号：US17664987
申请日：2022-05-25
Applicant: STMICROELECTRONICS SA
Inventor： Pierre Dautriche , Sylvain Engels
Abstract: According to one aspect, an embodiment radio frequency receiver device comprises an input interface configured to receive a radio frequency signal of a given type and convert same into an electric signal, a detector configured to detect at least one voltage level in the electric signal, a pulse generator configured to generate at least one pulse train representative of the voltage levels detected, and a processing unit configured to determine the type of the radio frequency signal from the at least one pulse train.
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公开(公告)号：US10181654B2
公开(公告)日：2019-01-15
申请号：US14869811
申请日：2015-09-29
Applicant: STMICROELECTRONICS SA
Inventor： Jean-Francois Carpentier , Sébastien Pruvost , Patrice Garcia , Pierre Busson , Pierre Dautriche
IPC: H01Q21/00 , H01Q23/00 , H01L23/498 , H01L23/66 , H01L23/00 , H01Q19/00 , H01Q19/10 , H01Q19/185 , H01L23/31 , H01L23/552
Abstract: A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on a printed circuit board by bumps; an integrated circuit chip assembled on the upper surface of the interposer; antennas made of tracks formed on the upper surface of the interposer; and reflectors on the upper surface of the printed circuit board in front of each of the antennas, the effective distance between each antenna and the reflector plate being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials.
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公开(公告)号：US20160020524A1
公开(公告)日：2016-01-21
申请号：US14869811
申请日：2015-09-29
Applicant: STMICROELECTRONICS SA
Inventor： Jean-Francois Carpentier , Sébastien Pruvost , Patrice Garcia , Pierre Busson , Pierre Dautriche
IPC: H01Q19/185 , H01L23/00 , H01L23/498 , H01L23/31 , H01Q19/10 , H01Q19/00
CPC classification number: H01Q21/0087 , H01L23/3114 , H01L23/3128 , H01L23/49816 , H01L23/49838 , H01L23/552 , H01L23/66 , H01L24/13 , H01L2223/6677 , H01L2224/1319 , H01L2224/13582 , H01L2224/16225 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01Q19/005 , H01Q19/10 , H01Q19/185 , H01Q21/0025 , H01Q21/0093 , H01Q23/00 , H01L2924/00
Abstract: A millimeter wave transceiver including a plate forming an interposer having its upper surface supporting an interconnection network and having its lower surface intended to be assembled on a printed circuit board by bumps; an integrated circuit chip assembled on the upper surface of the interposer; antennas made of tracks formed on the upper surface of the interposer; and reflectors on the upper surface of the printed circuit board in front of each of the antennas, the effective distance between each antenna and the reflector plate being on the order of one quarter of the wavelength, taking into account the dielectric constants of the interposed materials.
Abstract translation: 一种毫米波收发器，包括形成插入件的板，其具有支撑互连网络的上表面，并且其下表面旨在通过凸块组装在印刷电路板上; 组装在所述插入件的上表面上的集成电路芯片; 由形成在插入件的上表面上的轨道制成的天线; 以及在每个天线前面的印刷电路板的上表面上的反射器，考虑到插入材料的介电常数，每个天线和反射板之间的有效距离在波长的四分之一左右 。
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公开(公告)号：US20210399749A1
公开(公告)日：2021-12-23
申请号：US17328612
申请日：2021-05-24
Applicant: STMicroelectronics SA
Inventor： Pierre Dautriche , Sylvain Engels
Abstract: According to one aspect, an embodiment radio frequency receiver device comprises an input interface configured to receive a radio frequency signal of a given type and convert same into an electric signal, a detector configured to detect at least one voltage level in the electric signal, a pulse generator configured to generate at least one pulse train representative of the voltage levels detected, and a processing unit configured to determine the type of the radio frequency signal from the at least one pulse train.
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公开(公告)号：US09647625B2
公开(公告)日：2017-05-09
申请号：US14084394
申请日：2013-11-19
Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
Inventor： David Petit , Sylvain Joblot , Pierre Bar , Jean-Francois Carpentier , Pierre Dautriche
CPC classification number: H03H3/02 , G01N29/022 , G02F1/133707 , H03H3/04 , H03H9/0028 , H03H9/02102 , H03H9/175 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: A method for manufacturing a wafer on which are formed resonators, each resonator including, above a semiconductor substrate, a stack of layers including, in the following order from the substrate surface: a Bragg mirror; a compensation layer made of a material having a temperature coefficient of the acoustic velocity of a sign opposite to that of all the other stack layers; and a piezoelectric resonator, the method including the successive steps of: a) depositing the compensation layer; and b) decreasing thickness inequalities of the compensation layer due to the deposition method, so that this layer has a same thickness to within better than 2%, and preferably to within better than 1%, at the level of each resonator.
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