公开(公告)号：US20150069336A1

公开(公告)日：2015-03-12

申请号：US14174989

申请日：2014-02-07

Applicant: Samsung Display Co., LTD.

Inventor： Hiroshi OKUMURA ,  Je-Hun LEE ,  Jin-Hyun PARK

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/127 ,  H01L21/385 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

Abstract translation: 薄膜晶体管包括在基板上的栅电极，覆盖基板上的栅电极的栅极绝缘层，设置在栅极绝缘层上并且包括叠加在栅电极上的沟道部分的氧化物半导体图案，以及低 分别设置在沟道部分的边缘并且包括氧空位的电阻图案，氧化物半导体图案上的沟道钝化层，覆盖氧化物半导体图案和沟道钝化层的反应层，并且包括金属氧化物，以及 源电极和接触氧化物半导体图案的漏电极。

公开(公告)号：US20240032339A1

公开(公告)日：2024-01-25

申请号：US18118190

申请日：2023-03-07

Applicant: Samsung Display Co., LTD.

Inventor： Hiroshi OKUMURA ,  Jong Hoon CHOI ,  Jong Jun BAEK

IPC: H10K59/121 ,  H10K59/12 ,  H01L29/786 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66

CPC classification number: H10K59/1213 ,  H10K59/1201 ,  H01L29/78696 ,  H01L29/42384 ,  H01L29/41733 ,  H01L29/78663 ,  H01L29/78672 ,  H01L29/6675

Abstract: A display device includes an active layer disposed on a substrate, the active layer including a channel region and a first conductive region, the first conductive region including a first sub-conductive region disposed on a first side of the channel region, and a second sub-conductive region disposed between the first sub-conductive region and the channel region. The first conductive region further includes a first doped layer disposed on the substrate in the first sub-conductive region, a second doped layer disposed on the first doped layer in the first sub-conductive region, disposed on the substrate in the second sub-conductive region, and a third doped layer disposed on the second doped layer in the first sub-conductive region and the second sub-conductive region.

公开(公告)号：US20230119285A1

公开(公告)日：2023-04-20

申请号：US17892342

申请日：2022-08-22

Applicant: Samsung Display Co., LTD.

Inventor： Ji-Hwan KIM ,  Hiroshi OKUMURA

IPC: H01L21/02

Abstract: A crystallization method of amorphous silicon includes forming amorphous silicon on a substrate; first-irradiating a laser beam on the amorphous silicon while moving the substrate in a first direction; moving a position of the substrate in a second direction perpendicular to the first direction, and second-irradiating a laser beam on the amorphous silicon while moving the substrate in an opposite direction to the first direction.

公开(公告)号：US20220115233A1

公开(公告)日：2022-04-14

申请号：US17559415

申请日：2021-12-22

Applicant: Samsung Display Co., Ltd.

Inventor： Hiroshi OKUMURA ,  Jongjun BAEK ,  Dong-Sung LEE

IPC: H01L21/02 ,  H01L21/67

Abstract: A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

公开(公告)号：US20200185222A1

公开(公告)日：2020-06-11

申请号：US16592087

申请日：2019-10-03

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hiroshi OKUMURA ,  Jongjun BAEK ,  Dong-Sung LEE

IPC: H01L21/02 ,  H01L21/67

Abstract: A laser irradiation method includes a first scanning wherein a laser beam is scanned in a first region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using a spot laser beam, and a second scanning wherein laser beam is scanned in a second region having a width in the X direction and a length in the Y direction by moving a laser irradiation area on the surface of the substrate along the Y direction using the spot laser beam. A center of the second region is spaced apart from a center of the first region in the X direction.

公开(公告)号：US20160322390A1

公开(公告)日：2016-11-03

申请号：US15204433

申请日：2016-07-07

Applicant: Samsung Display Co., Ltd.

Inventor： Hiroshi OKUMURA ,  Je-Hun LEE ,  Jin-Hyun PARK

IPC: H01L27/12 ,  H01L29/66 ,  H01L21/385 ,  H01L29/786

CPC classification number: H01L27/127 ,  H01L21/385 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

公开(公告)号：US20250151336A1

公开(公告)日：2025-05-08

申请号：US18752965

申请日：2024-06-25

Applicant: Samsung Display Co., LTD.

Inventor： Hiroshi OKUMURA ,  Dong Gyu JIN ,  Da Woon JUNG

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121

Abstract: Provided are a thin-film transistor, a display device including the thin-film transistor, and a method of fabricating the thin-film transistor. The thin-film transistor includes a semiconductor layer disposed on a substrate; and a gate electrode disposed on a gate insulating layer which covers the semiconductor layer, where the gate electrode overlaps a portion of the semiconductor layer. The semiconductor layer includes a channel portion overlapped by the gate electrode, a first electrode portion connected to an end of the channel portion and a second electrode portion connected to another end of the channel portion, a portion of the gate insulating layer between the channel portion and the gate electrode has a first thickness, and another portion of the gate insulating layer has a second thickness smaller than the first thickness.

公开(公告)号：US20210320268A1

公开(公告)日：2021-10-14

申请号：US17077648

申请日：2020-10-22

Applicant: Samsung Display Co., Ltd.

Inventor： Minkyung KANG ,  Byungsoo SO ,  Jaewoo JEONG ,  Jongjun BAEK ,  Hiroshi OKUMURA

IPC: H01L51/00 ,  H01L27/32 ,  H01L51/56

Abstract: A method of manufacturing a display apparatus includes forming a first substrate on a support substrate; forming a first barrier layer on the first substrate; and forming a conductive layer by implanting n-type impurities or p-type impurities in the first barrier layer and at least a portion of the first substrate. A display apparatus includes a conductive layer arranged on a substrate and a barrier layer arranged on the conductive layer. The conductive layer is doped with n-type impurities when the first barrier layer is doped with n-type impurities, and the conductive layer is doped with p-type impurities when the first barrier layer is doped with p-type impurities.

公开(公告)号：US20210033853A1

公开(公告)日：2021-02-04

申请号：US16802011

申请日：2020-02-26

Applicant: Samsung Display Co., Ltd.

Inventor： Jihwan KIM ,  Jongjun BAEK ,  Byungsoo SO ,  Hiroshi OKUMURA

IPC: G02B26/12 ,  G02F1/07 ,  H01L21/67 ,  H01L21/02 ,  B23K26/064 ,  B23K26/082 ,  B23K26/354

Abstract: Provided are a laser annealing apparatus and a method of manufacturing a substrate having a poly-Si layer using the laser annealing apparatus. The laser annealing apparatus includes a laser beam source that emits a linearly polarized laser beam, a polygon mirror that rotates around a rotation axis and reflects the laser beam emitted from the laser beam source, a first Kerr cell disposed on a laser beam path between the laser beam source and the polygon mirror, and a first optical element that directs the laser beam reflected by the polygon mirror toward an amorphous Si layer where the laser beam is irradiated upon the amorphous Si layer.

公开(公告)号：US20150053970A1

公开(公告)日：2015-02-26

申请号：US14454822

申请日：2014-08-08

Applicant: Samsung Display Co., LTD.

Inventor： Je-Hun LEE ,  Sung-Hoon YANG ,  Hiroshi OKUMURA ,  Jin-Ho HWANG

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1259 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display substrate includes a gate electrode on a base substrate, an active pattern which overlaps the gate electrode and includes a metal oxide semiconductor, an insulation pattern on the active pattern, a source electrode which contacts the active pattern, a drain electrode which contacts the active pattern and is spaced apart from the source electrode, and a first passivation layer which covers the active pattern and the insulation pattern, and includes fluorine, where the active pattern includes a first portion which directly contacts the insulation pattern and overlaps the gate electrode and the insulation pattern, a second portion which contacts the first passivation layer and has an electrical conductivity substantially larger than that of the first portion, a third portion which contacts the first passivation layer, has an electrical conductivity substantially larger than that of the first portion and is spaced apart from the second portion.

Abstract translation: 显示基板包括在基底基板上的栅极电极，与栅电极重叠并且包括金属氧化物半导体的有源图案，有源图案上的绝缘图案，与有源图案接触的源极电极， 并且与源电极间隔开，以及覆盖有源图案和绝缘图案并包括氟的第一钝化层，其中有源图案包括直接接触绝缘图案并与栅电极重叠的第一部分，以及 所述绝缘图案是接触所述第一钝化层并具有比所述第一部分的导电性大的电导率的第二部分，与所述第一钝化层接触的第三部分具有比所述第一部分的电导率大的电导率， 与第二部分间隔开。