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1.发明申请ETCHANT, METHOD OF MANUFACTURING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE ETCHANT 有权蚀刻剂，使用蚀刻剂制造金属接线和薄膜晶体管基板的方法公开(公告)号：US20150004758A1
公开(公告)日：2015-01-01
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L21/306 , H01L29/66 , C09K13/08
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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公开(公告)号：US09347125B2
公开(公告)日：2016-05-24
申请号：US14725849
申请日：2015-05-29
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
IPC分类号： C23F1/18 , C22F1/18 , H01L21/28 , C23F1/26 , H01L27/12 , H01L21/3213 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/44 , H01L21/32 , H05K3/06
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
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3.发明申请GLASS-REINFORCING COMPOSITION AND METHOD OF MANUFACTURING TOUCHSCREEN GLASS USING THE SAME 审中-公开玻璃增强组合物及使用其制造触摸玻璃的方法公开(公告)号：US20150274583A1
公开(公告)日：2015-10-01
申请号：US14480019
申请日：2014-09-08
发明人： Soo Min AN , Young-Jin Yoon , Gi Yong Nam , Soo Guy Rho , Sang-Duck Park , Kang Bin Yi , Jung Bo Lee , Sang Hun Cho , Sang-Tae Kim , Young-Jun Jin , Yong Seok Choi
CPC分类号： C03C15/00 , C03C21/002 , C09K13/08
摘要： A glass-reinforcing composition and method of using the same, the composition including 1 weight % to 20 weight % of hydrofluoric acid, 0.1 weight % to 5 weight % of ammonium fluoride, 1 weight % to 20 weight % of an inorganic acid, an organic acid, or 1 weight % to 10 weight % of an organic acid salt, and a remainder of water.
摘要翻译： 玻璃增强组合物及其使用方法，所述组合物含有1重量％〜20重量％的氢氟酸，0.1重量％〜5重量％的氟化铵，1重量％〜20重量％的无机酸， 有机酸或1重量％至10重量％的有机酸盐，剩余的水。
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4.发明授权Etchant, display device and method for manufacturing display device using the same 有权蚀刻剂，显示装置及使用其的显示装置的制造方法公开(公告)号：US09111813B2
公开(公告)日：2015-08-18
申请号：US14307155
申请日：2014-06-17
发明人： Hong-Sick Park , Wang-Woo Lee , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Young-Jin Yoon , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Dong-Ki Kim
IPC分类号： H01L29/04 , H01L27/12 , H01L21/3213 , H01L29/417
CPC分类号： H01L27/127 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/41733
摘要： An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.
摘要翻译： 蚀刻剂包括：5〜20重量％的过硫酸盐，1〜10重量％的至少一种无机酸化合物，无机酸盐或其混合物，0.3〜5重量％的环状胺化合物，1〜 10重量％的至少一种有机酸化合物，有机酸盐或其混合物，0.1至5重量％的对甲苯磺酸和水，基于蚀刻剂的总重量。 另外，铜 - 钛蚀刻剂还含有0.01〜2重量％的含氟化合物。 还公开了使用蚀刻剂形成显示装置的方法和显示装置。
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5.发明授权Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant 有权使用蚀刻剂制造金属布线和薄膜晶体管基板的蚀刻剂组成和方法公开(公告)号：US09293565B2
公开(公告)日：2016-03-22
申请号：US14100124
申请日：2013-12-09
发明人： Jong-Hyun Choung , In-Bae Kim , Jae-Woo Jeong , Hong-Sick Park , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： H01L29/66 , C09K13/08 , H01L21/3213 , C23F1/02 , C23F1/18 , C23F1/26 , H01L29/45 , H01L29/49 , H01L27/32
CPC分类号： H01L29/66742 , C09K13/08 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/3276 , H01L29/458 , H01L29/4908
摘要： An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.
摘要翻译： 蚀刻剂组合物包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化物，约1重量％至约10重量％的无机酸，约0.5重量％至约 5重量％的环胺化合物，约0.1重量％至约10.0重量％的具有氨基和磺酸的化合物，约0.1重量％至约15.0重量％的有机酸或其盐，和水 至100重量％的蚀刻剂组成。
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6.发明授权Etchant composition and method of forming metal wire and thin film transistor array panel using the same 有权蚀刻剂组成和形成金属线和薄膜晶体管阵列面板的方法使用相同公开(公告)号：US09045833B2
公开(公告)日：2015-06-02
申请号：US13718557
申请日：2012-12-18
发明人： In-Bae Kim , Jong-Hyun Choung , Seon-Il Kim , Hong-Sick Park , Wang Woo Lee , Jae-Woo Jeong , In Seol Kuk , Sang-Tae Kim , Young-Chul Park , Keyong Bo Shim , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee , Joon-Woo Lee , Sang-Hoon Jang , Young-Jun Jin
CPC分类号： C22F1/18 , C09K13/00 , C09K13/04 , C09K13/06 , C09K13/08 , C23F1/14 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28008 , H01L21/32 , H01L21/32134 , H01L27/124 , H01L27/1288 , H05K3/067
摘要： A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.
摘要翻译： 一种蚀刻剂组合物，其包含基于蚀刻剂组合物的总重量为约0.5重量％至约20重量％的过硫酸盐，约0.5重量％至约0.9重量％的氟化铵，约1重量％至约10重量％ 无机酸的重量百分比，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约10.0重量％的磺酸，约5重量％至约10重量％的有机酸，或 其盐，剩余的水。 蚀刻剂组合物可以被配置为蚀刻包括铜和钛的金属层，以形成可以包括在显示装置的薄膜晶体管阵列面板中的金属线。
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公开(公告)号：US09741827B2
公开(公告)日：2017-08-22
申请号：US14508858
申请日：2014-10-07
发明人： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-Il Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： C23F1/18 , H01L29/66 , H01L27/12 , H01L21/3213 , C23F1/02 , C23F1/26 , H01L29/45 , H01L29/49
CPC分类号： H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
摘要： An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
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公开(公告)号：US20150307779A1
公开(公告)日：2015-10-29
申请号：US14508858
申请日：2014-10-07
发明人： Jong-Hyun Choung , In-Bae Kim , Hong-Sick Park , Seon-ll Kim , In-Seol Kuk , Gi-Yong Nam , Young-Chul Park , In-Ho Yu , Young-Jin Yoon , Suck-Jun Lee
IPC分类号： C09K13/08 , H01L29/66 , H01L21/306 , H01L27/12
CPC分类号： H01L29/66765 , C23F1/02 , C23F1/18 , C23F1/26 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/458 , H01L29/4908
摘要： An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.
摘要翻译： 提供了包含0.5至20重量％的过硫酸盐的蚀刻剂组合物; 0.01〜2重量％的氟化合物; 1〜10重量％的无机酸; 0.5〜5重量％的含氮（氮原子）的杂环化合物; 0.1至5重量％的氯化物; 0.05〜3重量％的铜盐; 有机酸或0.1〜10重量％的有机酸盐; 电子给体化合物为0.1〜5重量％ 和残留量的溶剂。 还提供了使用该显示装置制造显示装置的方法。
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