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公开(公告)号：US20200021265A1
公开(公告)日：2020-01-16
申请号：US16271158
申请日：2019-02-08
发明人： Tae Kyung LEE , Kwang Su KIM , Jin Suk SON , Yeong Gyu LEE , Sung Sun KIM , Sang Jin KIM
摘要： An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other, wherein the cap includes a trench formed around the bonding portion and a protective layer covering a surface of the trench in the cap, and wherein a portion of the bonding portion fills at least a portion of the trench.
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公开(公告)号：US20190058451A1
公开(公告)日：2019-02-21
申请号：US16039952
申请日：2018-07-19
发明人： Tae Kyung LEE , Ran Hee SHIN , Je Hong KYOUNG , Hwa Sun LEE , Jin Suk SON , Sung Sun KIM
IPC分类号： H03H9/02
CPC分类号： H03H9/131 , H03H9/02015 , H03H9/173 , H03H9/175
摘要： A bulk acoustic wave resonator includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer at least partially disposed on the lower electrode; and an upper electrode disposed on the piezoelectric layer, wherein either one or both of the lower electrode and the upper electrode includes a layer of aluminum alloy including scandium (Sc).
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公开(公告)号：US20180351534A1
公开(公告)日：2018-12-06
申请号：US15875541
申请日：2018-01-19
发明人： Tae Kyung LEE , Jin Suk SON , Je Hong KYOUNG , Ran Hee SHIN , Sung Sun KIM
摘要： An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer and having a hydrophobic layer disposed on at least one of a portion of an upper surface of the cavity and a portion of a lower surface of the cavity; and a resonating portion disposed on the cavity and having a second electrode on a piezoelectric layer on a first electrode.
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公开(公告)号：US20170179923A1
公开(公告)日：2017-06-22
申请号：US15085072
申请日：2016-03-30
发明人： Ran Hee SHIN , Tae Kyung LEE , Sung HAN , Yun Sung KANG , Sung Sun KIM , Jin Suk SON , Jeong Suong YANG , Hwa Sun LEE , Eun Tae PARK
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02015 , H03H9/02118 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.
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公开(公告)号：US20240210596A1
公开(公告)日：2024-06-27
申请号：US18510845
申请日：2023-11-16
发明人： Jin Woo YI , Sung Jun LEE , Tae Kyung LEE , Sung Sun KIM , Young Kyo JUNG
IPC分类号： G02B1/11
CPC分类号： G02B1/11
摘要： A lens includes a lens unit; an anti-reflective (AR) coating layer, disposed on one surface of the lens unit, including a first coating layer and a second coating layer alternately stacked one or more times, wherein a refractive index of the first coating layer is different from a refractive index of the second coating layer; and an intermediate layer, disposed between the lens unit and the AR coating layer, is formed of a same material as the first coating layer or the second coating layer. The intermediate layer is disposed on the lens unit by chemical vapor deposition (CVD).
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公开(公告)号：US20200067483A1
公开(公告)日：2020-02-27
申请号：US16668118
申请日：2019-10-30
发明人： Ran Hee SHIN , Tae Kyung LEE , Sung HAN , Yun Sung KANG , Sung Sun KIM , Jin Suk SON , Jeong Suong YANG , Hwa Sun LEE , Eun Tae PARK
摘要： An acoustic resonator and a method of manufacturing the same are provided. The acoustic resonator includes a resonating part including a first electrode, a second electrode, and a piezoelectric layer; and a plurality of seed layers disposed on one side of the resonating part.
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公开(公告)号：US20170373665A1
公开(公告)日：2017-12-28
申请号：US15452090
申请日：2017-03-07
发明人： Tae Kyung LEE , Jae Sang LEE , Sung HAN , Sung Sun KIM , In Young KANG , Ran Hee SHIN
摘要： A bulk acoustic wave resonator includes a substrate, a first electrode and a second electrode formed on the substrate, and a piezoelectric layer provided between the first electrode and the second electrode. Either one or both of the first electrode and the second electrode include a molybdenum-tungsten alloy having a weight ratio of molybdenum to tungsten in a range of 3:1 to 1:3.
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公开(公告)号：US20170237408A1
公开(公告)日：2017-08-17
申请号：US15271579
申请日：2016-09-21
发明人： Sung HAN , Dae Ho KIM , Ran Hee SHIN , Hwa Sun LEE , Chang Hyun LIM , Tae Kyung LEE , Sung Sun KIM
CPC分类号： H03H9/17 , H03H3/02 , H03H9/02118 , H03H9/13 , H03H9/173 , H03H9/54 , H03H2003/021
摘要： A resonator includes a resonating portion including a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode; and a frame provided at an outer edge of the resonating portion, at least a portion of the frame covering an outer end portion of the second electrode.
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公开(公告)号：US20200266795A1
公开(公告)日：2020-08-20
申请号：US16449561
申请日：2019-06-24
发明人： Tae Kyung LEE , Je Hong KYOUNG , Sung Sun KIM , Jin Suk SON , Ran Hee SHIN , Hwa Sun LEE
摘要： A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).
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公开(公告)号：US20190013792A1
公开(公告)日：2019-01-10
申请号：US15972694
申请日：2018-05-07
发明人： Tae Kyung LEE , Sung Sun KIM , Sang Kee YOON , Chang Hyun LIM , Jin Suk SON , Ran Hee SHIN , Je Hong KYOUNG
IPC分类号： H03H9/17 , H03H9/13 , H03H3/02 , H01L41/047 , H01L41/314 , H01L41/29
摘要： An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.
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