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公开(公告)号：US09799382B2
公开(公告)日：2017-10-24
申请号：US14852422
申请日：2015-09-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee , Eugene Chen
CPC classification number: G11C11/14 , C23C14/081 , C23C14/5806 , C23C14/5873 , G11C11/161
Abstract: A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
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2.发明申请METHOD FOR PROVIDING FOR THIN (001) ORIENTATION MgO LAYERS FOR MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC MEMORY APPLICATIONS AND THE MAGNETIC JUNCTIONS SO FORMED 有权提供薄（001）方向的方法用于磁性转移的磁性层的MgO层可用于转移转矩磁记忆应用和形成的磁性结公开(公告)号：US20160086645A1
公开(公告)日：2016-03-24
申请号：US14852422
申请日：2015-09-11
Applicant: Samsung Electronics Co., LTD.
Inventor： Dustin William Erickson , Xueti Tang , Jangeun Lee , Eugene Chen
CPC classification number: G11C11/14 , C23C14/081 , C23C14/5806 , C23C14/5873 , G11C11/161
Abstract: A method for providing a magnetic junction usable in a magnetic device and a magnetic junction are described. A reference layer, a crystalline MgO tunneling barrier layer and a free layer are provided. The crystalline MgO tunneling barrier layer is continuous, has a (001) orientation and has a thickness of not more than eleven Angstroms and not less than two Angstroms. The crystalline MgO tunneling barrier layer is between the free layer and the reference layer. The magnetic junction is configured such that the free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 描述了一种用于提供可用于磁性装置和磁性结的磁结的方法。 提供了参考层，结晶MgO隧道势垒层和自由层。 结晶MgO隧道势垒层是连续的，具有（001）取向并且具有不超过11埃和不小于2埃的厚度。 结晶MgO隧道势垒层位于自由层和参考层之间。 磁结被配置为使得当写入电流通过磁性结时，自由层可在稳定的磁状态之间切换。
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3.发明授权Method and system for providing magnetic junctions having a thermally stable and easy to switch magnetic free layer 有权用于提供具有热稳定且易于切换无磁性层的磁结的方法和系统公开(公告)号：US09029965B2
公开(公告)日：2015-05-12
申请号：US14026386
申请日：2013-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eugene Chen , Dmytro Apalkov
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1675 , H01L43/12
Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层包括多个子区域。 每个子区具有磁热稳定性常数。 这些子区域被铁磁耦合，使得自由层具有总的磁热稳定性常数。 磁性热稳定性常数使得每个子区域在工作温度下是磁不热的。 总磁热稳定性常数使得自由层在工作温度下是磁性热稳定的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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4.发明申请METHOD AND SYSTEM FOR PROVIDING MAGNETIC JUNCTIONS HAVING A THERMALLY STABLE AND EASY TO SWITCH MAGNETIC FREE LAYER 有权用于提供具有稳定且易于切换无磁层的磁轭的方法和系统公开(公告)号：US20140151831A1
公开(公告)日：2014-06-05
申请号：US14026386
申请日：2013-09-13
Applicant: Samsung Electronics Co., Ltd.
Inventor： Eugene Chen , Dmytro Apalkov
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1675 , H01L43/12
Abstract: A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer includes a plurality of subregions. Each of the subregions has a magnetic thermal stability constant. The subregions are ferromagnetically coupled such that the free layer has a total magnetic thermal stability constant. The magnetic thermal stability constant is such that the each of the subregions is magnetically thermally unstable at an operating temperature. The total magnetic thermal stability constant is such that the free layer is magnetically thermally stable at the operating temperature. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
Abstract translation: 一种方法和系统提供可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层和自由层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层包括多个子区域。 每个子区具有磁热稳定性常数。 这些子区域被铁磁耦合，使得自由层具有总的磁热稳定性常数。 磁性热稳定性常数使得每个子区域在工作温度下是磁不热的。 总磁热稳定性常数使得自由层在工作温度下是磁性热稳定的。 磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。
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