公开(公告)号：US09792971B2

公开(公告)日：2017-10-17

申请号：US14730379

申请日：2015-06-04

Applicant: Samsung Electronics Co., LTD.

Inventor： Matthew J. Carey ,  Dmytro Apalkov ,  Keith Chan

IPC: H01L29/82 ,  G11C11/16 ,  H01L43/12 ,  H01L43/08

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes a reference layer, a free layer, a nonmagnetic spacer layer between the reference and free layers, and a rare earth-transition metal (RE-TM) layer in the reference and/or free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. If the RE-TM layer is in the free layer then the RE-TM layer is between hard and soft magnetic layers in the free layer. In this aspect, the RE-TM layer has a standby magnetic moment greater than a write magnetic moment. If the RE-TM layer is in the reference layer, then the magnetic junction includes a second RE-TM layer. In this aspect, a first saturation magnetization quantity of the RE-TM layer matches a second saturation magnetization quantity of the second RE-TM layer over an operating temperature range.

公开(公告)号：US09236564B2

公开(公告)日：2016-01-12

申请号：US14478963

申请日：2014-09-05

Applicant: Samsung Electronics Co., LTD.

Inventor： Matthew J. Carey ,  Keith Chan ,  Roman Chepulskyy

IPC: H01L43/02 ,  G11B5/39 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 至少一个自由层和被钉扎层包括至少一个设计的Heusler结构，其具有第一磁性层，第二磁性层和位于磁性层之间的非晶层。 第一和第二磁性层中的至少一个是Heusler层。 第一磁性层的垂直磁各向异性能（PMAE）超过了平面外退磁能。 第二磁性层的PMAE超过其平面外退磁能。 自由层和/或被钉扎层具有大于面外去磁能的PMAE。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。

公开(公告)号：US20160005449A1

公开(公告)日：2016-01-07

申请号：US14730379

申请日：2015-06-04

Applicant: Samsung Electronics Co., LTD.

Inventor： Matthew J. Carey ,  Dmytro Apalkov ,  Keith Chan

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic junction usable in magnetic devices is described. The magnetic junction includes a reference layer, a free layer, a nonmagnetic spacer layer between the reference and free layers, and a rare earth-transition metal (RE-TM) layer in the reference and/or free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. If the RE-TM layer is in the free layer then the RE-TM layer is between hard and soft magnetic layers in the free layer. In this aspect, the RE-TM layer has a standby magnetic moment greater than a write magnetic moment. If the RE-TM layer is in the reference layer, then the magnetic junction includes a second RE-TM layer. In this aspect, a first saturation magnetization quantity of the RE-TM layer matches a second saturation magnetization quantity of the second RE-TM layer over an operating temperature range.

Abstract translation: 描述了可用于磁性装置的磁结。 磁结包括参考层，自由层，参考层和自由层之间的非磁性间隔层，以及参考和/或自由层中的稀土 - 过渡金属（RE-TM）层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 如果RE-TM层在自由层中，那么RE-TM层在自由层的硬磁层和软磁层之间。 在这方面，RE-TM层具有大于写入磁矩的待机磁矩。 如果RE-TM层在参考层中，则磁结包括第二RE-TM层。 在这方面，RE-TM层的第一饱和磁化量在工作温度范围内匹配第二RE-TM层的第二饱和磁化量。

公开(公告)号：US09460397B2

公开(公告)日：2016-10-04

申请号：US14478877

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Matthew J. Carey ,  Mohamad Towfik Krounbi ,  Alexey Vasilyevitch Khvalkovskiy

IPC: G06N99/00 ,  G11C11/16 ,  G11C11/14 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01F41/30 ,  G11C11/18 ,  H01F10/32

CPC classification number: G06N99/002 ,  G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic junction. The magnetic junction(s) include a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction(s) are configured to allow the free layer to be switched between stable magnetic states. The magnetic junction(s) are configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations.

Abstract translation: 描述了量子计算设备磁存储器。 量子计算设备磁存储器与包括对应于至少一个量子位的至少一个量子器件的量子处理器耦合。 量子计算设备磁存储器包括与量子器件耦合的磁存储单元和耦合到磁存储单元的位线。 每个磁存储单元包括至少一个磁结。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为允许自由层在稳定的磁状态之间切换。 磁结被配置为使得自由层在没有热波动的情况下具有非零的初始写入自旋转移转矩。

公开(公告)号：US20150097159A1

公开(公告)日：2015-04-09

申请号：US14478877

申请日：2014-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dmytro Apalkov ,  Matthew J. Carey ,  Mohamad Towfik Krounbi ,  Alexey Vasilyevitch Khvalkovskiy

IPC: G06N99/00 ,  H01L49/00

CPC classification number: G06N99/002 ,  G11C11/14 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/18 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: A quantum computing device magnetic memory is described. The quantum computing device magnetic memory is coupled with a quantum processor including at least one quantum device corresponding to at least one qubit. The quantum computing device magnetic memory includes magnetic storage cells coupled with the quantum device(s) and bit lines coupled to the magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic junction. The magnetic junction(s) include a reference layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the reference layer and the free layer. The magnetic junction(s) are configured to allow the free layer to be switched between stable magnetic states. The magnetic junction(s) are configured such that the free layer has a nonzero initial writing spin transfer torque in an absence of thermal fluctuations.

Abstract translation: 描述了量子计算设备磁存储器。 量子计算设备磁存储器与包括对应于至少一个量子位的至少一个量子器件的量子处理器耦合。 量子计算设备磁存储器包括与量子器件耦合的磁存储单元和耦合到磁存储单元的位线。 每个磁存储单元包括至少一个磁结。 磁结包括参考层，非磁性间隔层和自由层。 非磁性间隔层位于参考层和自由层之间。 磁结被配置为允许自由层在稳定的磁状态之间切换。 磁结被配置为使得自由层在没有热波动的情况下具有非零的初始写入自旋转移转矩。

公开(公告)号：US20150162378A1

公开(公告)日：2015-06-11

申请号：US14478963

申请日：2014-09-05

Applicant: Samsung Electronics Co., LTD.

Inventor： Matthew J. Carey ,  Keith Chan ,  Roman Chepulskyy

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. At least one of the free and pinned layers includes at least one engineered Heusler structure having a first magnetic layer, a second magnetic layer and an amorphous layer between the magnetic layers. At least one of the first and second magnetic layer(s) is a Heusler layer. The first magnetic layer's perpendicular magnetic anisotropy energy (PMAE) exceeds is out-of-plane demagnetization energy. The second magnetic layer's PMAE exceeds its out-of-plane demagnetization energy. The free layer and/or the pinned layer has a PMAE greater than an out-of-plane demagnetization energy. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 至少一个自由层和被钉扎层包括至少一个设计的Heusler结构，其具有第一磁性层，第二磁性层和位于磁性层之间的非晶层。 第一和第二磁性层中的至少一个是Heusler层。 第一磁性层的垂直磁各向异性能（PMAE）超过了平面外退磁能。 第二磁性层的PMAE超过其平面外退磁能。 自由层和/或被钉扎层具有大于面外去磁能的PMAE。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。