公开(公告)号：US20240233804A1

公开(公告)日：2024-07-11

申请号：US18404411

申请日：2024-01-04

Applicant: Samsung Electronics Co., LTD.

Inventor： Jayang YOON ,  Chihyun Kim ,  Sangwan Nam ,  Chiweon Yoon ,  Hyeongdo Choi

IPC: G11C11/4074 ,  G11C11/4076 ,  G11C11/4099

CPC classification number: G11C11/4074 ,  G11C11/4076 ,  G11C11/4099

Abstract: Disclosed is a memory device in which at least one word line or bit line is charged by a plurality of charging terminals. The memory device includes a first charging terminal for supplying a first voltage to the at least one word line or bit line, and a second charging terminal for suppling a second voltage to the at least one word line or bit line when voltage supply by the first charging terminal is completed. The supply of the second voltage starts when a charged voltage of the at least one word line or bit line, charged by using the first voltage, satisfies a first reference condition.

公开(公告)号：US20240242765A1

公开(公告)日：2024-07-18

申请号：US18382325

申请日：2023-10-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jayang Yoon ,  Chihyun Kim ,  Sangsoo Park ,  Junehong Park ,  Chiweon Yoon ,  Hyeongdo Choi

IPC: G11C16/10 ,  G11C16/08 ,  G11C16/30

CPC classification number: G11C16/102 ,  G11C16/08 ,  G11C16/30

Abstract: A non-volatile memory device includes a memory cell array including memory cells coupled to word lines, a boost circuit that receives an external power supply voltage and generate a boosted voltage based on the external power supply voltage, a regulator that generates a regulated voltage based on the external power supply voltage, and a control logic that controls word line voltages provided to the word lines. The control logic performs plural program loops in a program operation for the memory cell array. The control logic provides an adjacent word line voltage to an adjacent word line that is adjacent to a selected word line. In a first section of the program loops, the control logic provides the regulated voltage as the adjacent word line voltage, and in a second section of the program loops, the control logic provides the boosted voltage as the adjacent word line voltage.

公开(公告)号：US20240194273A1

公开(公告)日：2024-06-13

申请号：US18239480

申请日：2023-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chiweon Yoon ,  Chihyun Kim ,  Philkyu Kang ,  Junehong Park ,  Jayang Yoon ,  Hyeongdo Choi

IPC: G11C16/30 ,  G06F1/20 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/30 ,  G06F1/206 ,  G11C16/0483 ,  G11C16/08

Abstract: A nonvolatile memory device comprising a charge pump circuit with pump units connected in series that receives an external voltage for charge pumping and outputs a pump voltage in stages according to stage control signals, a switching circuit that controls the charge pump circuit to output pumping voltages in response to switch control signals, a stage controller that outputs the stage control signals and the switch control signals based on a temperature code, and a digital temperature sensor that generates the temperature code.