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    SEMICONDUCTOR MEMORY DEVICE
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 有权

    公开(公告)号：US20250040140A1

    公开(公告)日：2025-01-30

    申请号：US18603505

    申请日：2024-03-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ju Seong MIN ,  Jun Gyeom KIM ,  Hyun Min KIM ,  Kang-Oh YUN ,  Taek Kyu YOON ,  Dong Jin LEE ,  Jae Duk LEE ,  Jee Hoon HAN

    IPC: H10B43/40 ,  G11C5/06 ,  G11C16/04 ,  H01L25/065 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

    Abstract: A semiconductor memory device comprises a cell structure and a peripheral circuit structure electrically connected to the cell structure. The peripheral circuit structure comprises an active region, a first gate structure comprising a first gate insulating layer intersecting the active region and in contact with the active region, a second gate structure comprising a second gate insulating layer spaced apart from the first gate structure, and in contact with the active region, and a source/drain region between the first gate structure and the second gate structure. A thickness of the first gate insulating layer is less than a thickness of the second gate insulating layer. The source/drain region comprises a first region adjacent to the first gate structure and a second region adjacent to the second gate structure. A depth of the first region is equal to a depth of the second region.

    SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE, METHOD FOR FABRICATING THE SAME AND ELECTRONIC SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20250098172A1

    公开(公告)日：2025-03-20

    申请号：US18773994

    申请日：2024-07-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hak Seon KIM ,  Kang Oh YUN ,  Dong Jin LEE ,  Jae Duk LEE

    IPC: H10B43/40 ,  H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H10B43/27 ,  H10B80/00

    Abstract: A semiconductor memory device includes a peripheral circuit structure; and a cell structure including a cell substrate and a gate electrode, on the peripheral circuit structure. The peripheral circuit structure includes a peripheral circuit board including a first surface facing the cell structure and a second surface opposite to the first surface, a first circuit element on the first surface of the peripheral circuit board, a first wiring line electrically connected to the first circuit element in a first interlayer insulating layer, a capacitor dielectric layer covering the second surface of the peripheral circuit board, a first capacitor electrode in the capacitor dielectric layer, a second capacitor electrode spaced apart from the first capacitor electrode in the capacitor dielectric layer, and a first connection via electrically connecting the first capacitor electrode with the first wiring line by passing through the peripheral circuit board.

    DISPLAY APPARATUS AND METHOD OF CONTROLLING THE SAME
    7.
    发明申请
    DISPLAY APPARATUS AND METHOD OF CONTROLLING THE SAME 有权
    显示装置及其控制方法

    公开(公告)号：US20150160748A1

    公开(公告)日：2015-06-11

    申请号：US14508251

    申请日：2014-10-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kee Sung BAE ,  Sang Bae PARK ,  Sang Hoon LEE ,  Jae Hoon JEONG ,  Kyung Sun CHO ,  Seong Seol HONG ,  Dong Jin LEE ,  Mi Jin CHOI

    IPC: G06F3/041

    CPC classification number: G06F3/041 ,  G06F1/1652 ,  G06F2203/04102

    Abstract: A display apparatus and method are provided. The display apparatus includes a display including a plurality of independent display elements (IDEs) configured for shape deformation, and a controller configured to determine whether the display is deformed by transmitting a plurality of signals to the plurality of IDEs and receiving signals output from the plurality of IDEs in response to the transmitted signals.

    Abstract translation: 提供了一种显示装置和方法。 显示装置包括显示器，其包括被配置为形状变形的多个独立显示元件（IDE），以及控制器，被配置为通过向多个IDE发送多个信号以及从多个输出端发送多个信号来确定显示是否变形 的响应于所发送的信号的IDE。

    LITHOGRAPHY APPARATUS
    8.
    发明申请
    LITHOGRAPHY APPARATUS 有权

    公开(公告)号：US20250123573A1

    公开(公告)日：2025-04-17

    申请号：US18757567

    申请日：2024-06-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Yong BAE ,  Hyeon Jin KIM ,  Jeong-Gil KIM ,  Kyoung Hwan OH ,  Dong Jin LEE

    IPC: G03F7/00

    Abstract: A lithography apparatus comprises a wafer stage, a cable configured to be bent as the wafer stage moves, a first support configured to prevent the cable from sagging, and to support the cable to maintain a bent state of the cable when the cable moves, a first rail installed on a first side of the cable, and including curved track extending in a direction from a lower portion of the cable toward an upper portion of the cable, wherein the first rail includes a concave first surface, a second rail installed on a second side of the cable opposite the first side of the cable, and including curved track extending in the direction from the lower portion of the cable toward the upper portion of the cable, wherein the second rail includes a concave second surface.

    SEMICONDUCTOR DEVICE
    9.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20200161294A1

    公开(公告)日：2020-05-21

    申请号：US16660976

    申请日：2019-10-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong Jin LEE ,  Ji Young KIM ,  Bong Soo KIM ,  Hyeon Kyun NOH ,  Moon Young JEONG

    IPC: H01L27/06 ,  H01L29/22 ,  H01L27/12 ,  H01L27/108

    Abstract: A semiconductor device is provided. The semiconductor device includes a first substrate, an active region defined by an isolation film in the first substrate, an oxide semiconductor layer on the first substrate in the active region, and not comprising silicon, a recess inside the oxide semiconductor layer, and a gate structure filling the recess, comprising a gate electrode and a capping film on the gate electrode, and having an upper surface on a same plane as an upper surface of the active region.

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