公开(公告)号：US09666706B2

公开(公告)日：2017-05-30

申请号：US15210368

申请日：2016-07-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

IPC: H01L21/336 ,  H01L29/778 ,  H01L29/66 ,  H01L29/20 ,  H01L29/78 ,  H01L21/02 ,  H01L29/12 ,  H01L29/423 ,  H01L29/15 ,  H01L29/205

CPC classification number: H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

公开(公告)号：US09929239B2

公开(公告)日：2018-03-27

申请号：US15050867

申请日：2016-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Myoung-jae Lee ,  Seong-ho Cho ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Sang-moon Lee ,  Sung-hun Lee ,  Ji-hyun Hur ,  Eui-chul Hwang

IPC: H01L29/51 ,  H01L29/34 ,  H01L29/66 ,  H01L29/20 ,  H01L21/322 ,  H01L29/78 ,  H01L21/02 ,  H01L21/28 ,  H01L29/24

CPC classification number: H01L29/34 ,  H01L21/02175 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/022 ,  H01L21/02304 ,  H01L21/28158 ,  H01L21/28264 ,  H01L21/322 ,  H01L21/3228 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/7851

Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.

公开(公告)号：US20150061030A1

公开(公告)日：2015-03-05

申请号：US14471900

申请日：2014-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mohammad Rakib Uddin ,  Moon-seung Yang ,  Dong-soo Lee ,  Myoung-jae Lee ,  Seong-ho Cho ,  Eui-chul Hwang

IPC: H01L29/04 ,  H01L27/092 ,  H01L29/16 ,  H01L29/06 ,  H01L29/20

CPC classification number: H01L29/04 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/76224 ,  H01L21/8258 ,  H01L27/092 ,  H01L29/16 ,  H01L29/20

Abstract: Provided are semiconductor structures and methods of fabricating the same. The semiconductor structure includes a silicon substrate, at least one semiconductor layer that is grown on the silicon substrate and has a lattice constant in a range from about 1.03 to about 1.09 times greater than that of the silicon substrate, and a buffer layer that is disposed between the silicon substrate and the semiconductor layer and includes a metal silicide compound for lattice matching with the semiconductor layer. Related fabrication methods are also discussed.

Abstract translation: 提供半导体结构及其制造方法。 半导体结构包括硅衬底，至少一个在硅衬底上生长并具有比硅衬底大约1.03至大约1.09倍的晶格常数的半导体层，以及设置的缓冲层 在硅衬底和半导体层之间，并且包括用于与半导体层进行晶格匹配的金属硅化物化合物。 还讨论了相关的制造方法。

公开(公告)号：US09099304B2

公开(公告)日：2015-08-04

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Mohammad Rakib Uddin ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/318 ,  H01L21/02 ,  H01L29/20 ,  H01L21/28 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。

公开(公告)号：US20150028458A1

公开(公告)日：2015-01-29

申请号：US14211789

申请日：2014-03-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-soo Lee ,  Eui-chul Hwang ,  Seong-ho Cho ,  Myoung-jae Lee ,  Sang-moon Lee ,  Sung-hun Lee ,  Rakib Uddin Mohammad ,  David Seo ,  Moon-seung Yang ,  Ji-hyun Hur

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/66

CPC classification number: H01L21/02362 ,  H01L21/0226 ,  H01L21/28264 ,  H01L29/20 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/785

Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.

Abstract translation: 提供一种半导体器件，其包括在化合物半导体层和电介质层之间的扩散阻挡层，以及制造半导体器件的方法，使得半导体器件包括化合物半导体层; 电介质层; 以及包含在化合物半导体层和电介质层之间形成的氧氮化物的扩散阻挡层。