公开(公告)号：US20200251527A1

公开(公告)日：2020-08-06

申请号：US16512627

申请日：2019-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hee-Ju Shin ,  Ung-Hwan PI

IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/15 ,  G11C11/16

Abstract: An MRAM device includes a first conductive pattern including a material generating a spin orbital torque, a torque transfer pattern contacting a portion of an upper surface of the first conductive pattern, an insulation pattern on a side of the torque transfer pattern and covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure on the torque transfer pattern, the MTJ structure including a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern sequentially stacked.

公开(公告)号：US11004900B2

公开(公告)日：2021-05-11

申请号：US16512627

申请日：2019-07-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hee-Ju Shin ,  Ung-Hwan Pi

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  G11C11/15 ,  H01L43/02

Abstract: An MRAM device includes a first conductive pattern including a material generating a spin orbital torque, a torque transfer pattern contacting a portion of an upper surface of the first conductive pattern, an insulation pattern on a side of the torque transfer pattern and covering the first conductive pattern, and a magnetic tunnel junction (MTJ) structure on the torque transfer pattern, the MTJ structure including a free layer pattern, a tunnel barrier pattern, and a fixed layer pattern sequentially stacked.

公开(公告)号：US09666789B2

公开(公告)日：2017-05-30

申请号：US14741446

申请日：2015-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Heon Park ,  Ki-Woong Kim ,  Hee-Ju Shin ,  Joon-Myoung Lee ,  Woo-Jin Kim ,  Jae-Hoon Kim ,  Se-Chung Oh ,  Yun-Jae Lee

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/08 ,  G11C11/16 ,  H01L23/528 ,  H01L27/22 ,  H01F10/30

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/30 ,  H01F10/32 ,  H01F10/3254 ,  H01F10/3272 ,  H01L23/528 ,  H01L27/222 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device is provided having a free layer and a pinned layer spaced apart from each other. A tunnel barrier layer is formed between the free layer and the pinned layer. The pinned layer may include a lower pinned layer, and an upper pinned layer spaced apart from the lower pinned layer. A spacer may be formed between the lower pinned layer and the upper pinned layer. A non-magnetic junction layer may be disposed adjacent to the spacer or between layers in the upper or lower pinned layer.