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公开(公告)号:US11697764B2
公开(公告)日:2023-07-11
申请号:US17199616
申请日:2021-03-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon Kim , Jongmin Lee , Jooyeon Ahn , Hyeyeon Yang , Shin Ae Jun
IPC: C09K11/70 , C09K11/02 , C09K11/62 , C22C30/06 , G02F1/017 , B82Y30/00 , H10K59/38 , B82Y20/00 , B82Y40/00 , G02F1/13357
CPC classification number: C09K11/703 , B82Y30/00 , C09K11/025 , C09K11/623 , C22C30/06 , G02F1/01791 , H10K59/38 , B82Y20/00 , B82Y40/00 , G02F1/133617
Abstract: A quantum dot, a production method thereof, and a quantum dot composite and a device including the same are disclosed, wherein the quantum dot includes an alloy semiconductor nanocrystal including indium (In), gallium, zinc (Zn), phosphorus (P), and sulfur (S), and in the quantum dot, a mole ratio of gallium with respect to indium (Ga:In) is greater than or equal to about 0.2:1, a mole ratio of phosphorus with respect to indium (P:In) is greater than or equal to about 0.95:1, the quantum dot does not include cadmium, and in an UV-Vis absorption spectrum of the quantum dot(s), a first absorption peak is present in a range of less than or equal to about 520 nm.
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公开(公告)号:US10782611B2
公开(公告)日:2020-09-22
申请号:US15900519
申请日:2018-02-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeyeon Yang , Eun Joo Jang , Hyo Sook Jang , Shin Ae Jun
IPC: G03F7/028 , G02B5/20 , G03F7/004 , C09K11/70 , C09K11/77 , C08F220/06 , G03F7/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40 , G03F7/031 , G02F1/13357 , C09K11/02 , C09D4/00 , C08K3/30 , C08K3/32 , C08K9/10 , B82Y40/00 , B82Y20/00
Abstract: A photosensitive composition, a quantum dot polymer composite pattern prepared therefrom, and a layered structure and an electronic device including the same. The photosensitive composition includes plurality of quantum dots; a luminescent material other than a quantum dot; a carboxylic acid group containing binder; a photopolymerizable monomer having a carbon-carbon double bond; and a photoinitiator, and the luminescent material comprises a fluorophore, a nanosized inorganic phosphor, or a combination thereof.
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3.
公开(公告)号:US12195656B2
公开(公告)日:2025-01-14
申请号:US17687453
申请日:2022-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon Kim , Hyeyeon Yang , A Ra Jo , Sue In Chae , Sung Jun Park , Hyokeun Park , Shin Ae Jun
IPC: C09K11/88 , C09D11/037 , C09D11/50 , C09K11/08 , G02F1/1335 , B82Y20/00 , B82Y40/00
Abstract: A color conversion panel that includes a color conversion layer including two or more color conversion regions, and optionally, a partition wall defining the regions of the color conversion layer, and a display device including the color conversion panel. The color conversion region includes a first region corresponding to a first pixel, and the first region includes a first composite including a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide. The Group III-V compound includes indium, phosphorus, and optionally, zinc or gallium, or zinc and gallium, and the zinc chalcogenide includes zinc, selenium, and sulfur. The luminescent nanostructures further include aluminum and chlorine, and a mole ratio of aluminum to sulfur (Al:S) is less than about 0.15:1, a mole ratio of chlorine to sulfur (Cl:S) is less than about 0.1:1, and a mole ratio of sulfur to selenium (S:Se) is greater than or equal to about 2:1. The luminescent nanostructures don not include cadmium.
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公开(公告)号:US11180695B2
公开(公告)日:2021-11-23
申请号:US16914601
申请日:2020-06-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon Kim , Seonmyeong Choi , Shin Ae Jun , Hyeyeon Yang
Abstract: A quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In), gallium (Ga), and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein the quantum dot emits green light, wherein in the quantum dot, a mole ratio of gallium with respect to a sum of indium and gallium is less than or equal to about 0.5:1, and wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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5.
公开(公告)号:US10678130B2
公开(公告)日:2020-06-09
申请号:US16442984
申请日:2019-06-17
Inventor: Hyeyeon Yang , Tae Hyung Kim , Shang Hyeun Park , Shin Ae Jun , Yong Seok Han , Eun Joo Jang , Deukseok Chung
IPC: G02F1/1335 , G02B5/20 , G03F7/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/40 , G03F7/033 , G03F7/031 , G03F7/004 , G03F7/028 , G03F7/027 , G03F7/105 , G02B5/22
Abstract: A photosensitive composition and a quantum dot-polymer composite pattern formed from the photosensitive composition are disclosed, and the photosensitive composition includes: a plurality of quantum dots; a color filter material including an absorption dye, an absorption pigment, or a combination thereof; a polymer binder; a photopolymerizable monomer having a carbon-carbon double bond; a photoinitiator; and a solvent, wherein in a normalized photoluminescence spectrum of the quantum dot and a normalized ultraviolet-visible absorption spectrum of the color filter material, a photoluminescence peak wavelength (PL peak wavelength) of the quantum dot and a wavelength of maximum absorbance of the color filter material do not overlap with each other, and the color filter material is included in an amount of less than or equal to 1 part by weight per 10 parts by weight of the plurality of quantum dots.
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公开(公告)号:US11796911B2
公开(公告)日:2023-10-24
申请号:US17204110
申请日:2021-03-17
Applicant: SAMSUNG ELECTRONICS CO., LTD. , Samsung SDI Co., Ltd.
Inventor: Shin Ae Jun , Shang Hyeun Park , Hojeong Paek , Jonggi Kim , Hyeyeon Yang , Eun Joo Jang , Yong Seok Han
Abstract: A photosensitive composition including a quantum dot dispersion, a photopolymerizable monomer having a carbon-carbon double bond, and a photoinitiator, wherein the quantum dot dispersion includes an acid group-containing polymer and a plurality of quantum dots dispersed in the acid group-containing polymer, and wherein the acid group-containing polymer includes a copolymer of a monomer combination including a first monomer having a carboxylic acid group or a phosphonic acid group and a carbon-carbon double bond and a second monomer having a carbon-carbon double bond and a hydrophobic group and not having a carboxylic acid group and a phosphonic acid group.
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7.
公开(公告)号:US11795392B2
公开(公告)日:2023-10-24
申请号:US17234845
申请日:2021-04-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeyeon Yang , Jooyeon Ahn , Taekhoon Kim , Shang Hyeun Park , Nayoun Won , Mi Hye Lim , Shin Ae Jun
CPC classification number: C09K11/883 , C09K11/025 , C09K11/0883 , G02B6/005 , H10K50/115 , H10K59/38 , B82Y20/00 , B82Y40/00
Abstract: A cadmium-free quantum dot, a quantum dot-polymer composite including the cadmium-free quantum dot, a display device including the quantum dot-polymer composite, and an electroluminescent device including the cadmium-free quantum dot are disclosed, wherein the cadmium-free quantum dot includes a core including a first semiconductor nanocrystal including indium and phosphorus; a light emitting layer surrounding the core and including a second semiconductor nanocrystal including indium and phosphorus; a first shell disposed between the core and the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof; and a second shell disposed on the light emitting layer and including a semiconductor nanocrystal including zinc, and selenium, sulfur, or a combination thereof, and wherein the quantum is a single light emitting quantum dot having an emission peak wavelength in a range of about 500 nanometers (nm) to about 550 nm.
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公开(公告)号:US11352558B2
公开(公告)日:2022-06-07
申请号:US16904664
申请日:2020-06-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Tae Gon Kim , Shin Ae Jun , Taek hoon Kim , Hyeyeon Yang , Nayoun Won , Jongmin Lee , Mi Hye Lim
Abstract: A quantum dot, and a composite and a display device including the quantum dot. The quantum dot comprises a semiconductor nanocrystal core comprising indium and phosphorous, a semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc, selenium, and sulfur, wherein the quantum dot does not comprise cadmium wherein the quantum dot has a maximum photoluminescence peak in a green light wavelength region, and wherein in an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot, a ratio A450/Afirst, of an absorption value at 450 nm to an absorption value at a first excitation peak is greater than or equal to about 0.7, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.4: (Absfirst−Absvalley)/Absfirst=VD wherein, Absfirst is an absorption value at the first absorption peak wavelength and Absvalley is an absorption value at a lowest point of the valley adjacent to the first absorption peak.
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公开(公告)号:US10889755B2
公开(公告)日:2021-01-12
申请号:US15819556
申请日:2017-11-21
Inventor: Jinsuop Youn , Ha Il Kwon , Misun Kim , Jooyeon Ahn , Hyeyeon Yang , Bumjin Lee , Jongmin Lee , Shin Ae Jun , Hyunjoo Han
IPC: C09K11/70 , C09K11/02 , F21V8/00 , G02F1/1335 , G02F1/13357
Abstract: A photosensitive resin composition includes (A) a photo-conversion material; (B) a metal-containing compound; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent, wherein the metal-containing compound includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure, a complex including a polymer matrix in which a photo-conversion material is dispersed, wherein the polymer matrix includes a *—S-M-S—* (M is Zn, Al, Mg, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Sr, Y, Zr, Nb, Mo, Cd, In, Ba, Au, Hg, or Tl) structure and an ester linking group, a laminated structure including the complex, and a display device and an electronic device including the laminated structure.
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公开(公告)号:US10759993B2
公开(公告)日:2020-09-01
申请号:US16180376
申请日:2018-11-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hyeyeon Yang , Jongmin Lee , Shin Ae Jun
IPC: C09K11/02 , G02F1/13357 , C07F3/06 , F21V8/00 , G03F7/16 , G03F7/20 , G03F7/32 , G03F7/38 , H01L27/32 , G02F1/1335
Abstract: A quantum dot composition comprising a quantum dot, a metal thiolate complex compound, and a solvent, wherein the metal thiolate complex compound includes a hydrophobic moiety, a thioether moiety (—S—), and a polyvalent metal, and wherein the hydrophobic moiety includes a fluorinated organic group, a multi-aromatic ring-containing group having a backbone structure that includes a quaternary carbon atom, which is a part of a cyclic group, and two aromatic rings bound to the quaternary carbon atom, or a combination thereof.
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