公开(公告)号：US20220223702A1

公开(公告)日：2022-07-14

申请号：US17707036

申请日：2022-03-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-yeon LEE ,  Jin-wook LEE ,  Min-chan GWAK ,  Kye-Hyun BAEK ,  Hong-bae PARK

IPC: H01L29/417 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/78

Abstract: An integrated circuit device including a substrate; a fin-type active region protruding from the substrate; a gate line intersecting the fin-type active region and covering a top surface and side walls thereof; a gate insulating capping layer covering the gate line; source/drain regions at sides of the gate line on the fin-type active region; first conductive plugs connected to the source/drain regions; a hard mask layer covering the first conductive plugs; and a second conductive plug between the first conductive plugs, the second conductive plug connected to the gate line by passing through the gate insulating capping layer and having a top surface higher than the top surface of each first conductive plug, wherein the hard mask layer protrudes from the first conductive plugs and toward the second conductive plug so that a portion of the hard mask layer overhangs from an edge of the first conductive plugs.

公开(公告)号：US20190214394A1

公开(公告)日：2019-07-11

申请号：US16351004

申请日：2019-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun-hee BAI ,  Myeong-cheol KIM ,  Kwan-heum LEE ,  Do-hyoung KIM ,  Jin-wook LEE ,  Seung-mo HA ,  Dong-Hoon KHANG

IPC: H01L27/11 ,  H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/08 ,  H01L27/088

CPC classification number: H01L27/1104 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823425 ,  H01L21/823431 ,  H01L27/0886 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device includes a substrate, a fin active region pattern on the substrate, the fin active region pattern including an upper region and a lower region, a device isolation layer pattern surrounding the fin active region pattern, a gate pattern on the upper region of the fin active region pattern, and a stressor on the lower region of the fin active region pattern, wherein a top surface of the device isolation layer pattern is lower than a top surface of the upper region and higher than a top surface of the lower region.

公开(公告)号：US20150091528A1

公开(公告)日：2015-04-02

申请号：US14272116

申请日：2014-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jee-eun YANG ,  Jin-wook LEE ,  Sung-young YUN

IPC: H02J7/00 ,  H02N2/18

CPC classification number: H02J7/0042 ,  H01L41/1136 ,  H02J7/0052 ,  H02J2007/0059 ,  H02N2/186

Abstract: An auxiliary device including an energy harvester and an electronic device including the auxiliary device are provided. The auxiliary device includes: a housing; a storage module which is moveable within the housing; and at least one piezoelectric transducer which disposed in the housing, such that a motion of the storage module causes a deformation of the piezoelectric transducer, thus generating electric energy. An end of the piezoelectric transducer may be fixedly connected to the storage module.

Abstract translation: 提供了包括能量收集器和包括辅助装置的电子装置的辅助装置。 辅助装置包括：壳体; 存储模块，其可在所述壳体内移动; 以及设置在壳体中的至少一个压电换能器，使得存储模块的运动导致压电换能器的变形，从而产生电能。 压电换能器的端部可以固定地连接到存储模块。

公开(公告)号：US20230207662A1

公开(公告)日：2023-06-29

申请号：US18174902

申请日：2023-02-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-young KWAK ,  Ji -ye KIM ,  Jung-hwan CHUN ,  Min-chan GWAK ,  Dong-hyun ROH ,  Jin-wook LEE ,  Sang-jin HYUN

IPC: H01L29/66 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/45 ,  H10B10/00

CPC classification number: H01L29/66515 ,  H01L21/823821 ,  H01L21/823871 ,  H01L27/0924 ,  H01L29/45 ,  H01L29/7851 ,  H01L29/66795 ,  H10B10/12

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

公开(公告)号：US20150082184A1

公开(公告)日：2015-03-19

申请号：US14486227

申请日：2014-09-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-in KIM ,  Ji-hwan SEO ,  Jin-wook LEE

IPC: G06F3/0482 ,  H04L29/08

CPC classification number: H04L67/10 ,  H04L67/025 ,  H04W4/50 ,  H04W4/80

Abstract: A method of managing a control right in a 1:n network topology is provided. The master device includes a display unit configured to display a first screen, a control unit configured to receive a request for at least one right for controlling the master device and/or a mirroring service from at least one of a plurality of client devices mirroring the first screen, and to grant the requested right to the at least one of the plurality of client devices in response to the request, and a communication unit configured to receive the request and to transmit the response.

Abstract translation: 提供了一种管理1：n网络拓扑中的控制权的方法。 主设备包括被配置为显示第一屏幕的显示单元，被配置为从至少一个镜像服务器的客户端设备中的至少一个接收对至少一个用于控制主设备的控制权和/或镜像服务的请求的控制单元 第一屏幕，并且响应于该请求向所述多个客户端设备中的至少一个授予所请求的权限，以及被配置为接收所述请求并发送所述响应的通信单元。

公开(公告)号：US20140269757A1

公开(公告)日：2014-09-18

申请号：US14205998

申请日：2014-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-cheol PARK ,  Won-joo PARK ,  Jae-hoon KO ,  Woo-jin PARK ,  Hun-je YEON ,  Jin-wook LEE

IPC: H04L29/06 ,  H04L7/00 ,  H04L12/931

CPC classification number: H04L49/201 ,  H04L65/4076 ,  H04L65/80 ,  H04N21/4305 ,  H04N21/4307

Abstract: An apparatus and method for allowing a plurality of playback devices to stream content of a master device simultaneously is provided. When the master device selects one of the playback devices as a reference device and multicasts a synchronization packet to the playback devices, the playback devices determine a synchronization time by comparing their own synchronization packet reception time with a synchronization packet reception time of the reference device. When the master device streams content, into which a time stamp is inserted based on the time of the reference device, the playback devices play the content based on the determined synchronization time. Therefore, even when the playback devices have different network latencies from the master device, the playback devices may accurately perform synchronized content playback.

Abstract translation: 提供一种用于允许多个回放设备同时流式传输主设备的内容的设备和方法。 当主设备选择播放设备中的一个作为参考设备并且向播放设备多播同步分组时，回放设备通过将其自己的同步分组接收时间与参考设备的同步分组接收时间进行比较来确定同步时间。 当主设备基于参考设备的时间流式传输其中插入时间戳的内容时，播放设备基于所确定的同步时间播放内容。 因此，即使重放装置与主装置具有不同的网络延迟，回放装置也可以准确地执行同步的内容再现。

公开(公告)号：US20150063092A1

公开(公告)日：2015-03-05

申请号：US14450487

申请日：2014-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min-suk CHOI ,  Woo-jin PARK ,  Hun-je YEON ,  Van canh NGUYEN ,  Islam MOHAMMAD ZUBERUL ,  Won-joo PARK ,  Jin-wook LEE ,  Jin-guk JEONG

IPC: H04J3/06 ,  H04L12/24

CPC classification number: H04J3/0602 ,  H04L41/064 ,  H04L67/38

Abstract: A method of receiving a packet by a receiving terminal is provided. The method includes receiving one or more packets including information about an event which belongs to a same kind of event from a transmitting terminal, and selecting at least one packet from among the received one or more packets based on time information of a certain point of time at the certain point of time.

Abstract translation: 提供了一种由接收终端接收分组的方法。 该方法包括从发送终端接收一个或多个包括属于相同类型的事件的事件的分组，并且基于某个时间点的时间信息从所接收的一个或多个分组中选择至少一个分组 在某个时间点。

公开(公告)号：US20210384321A1

公开(公告)日：2021-12-09

申请号：US17393217

申请日：2021-08-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-young KWAK ,  Ji -ye KIM ,  Jung-hwan CHUN ,  Min-chan GWAK ,  Dong-hyun ROH ,  Jin-wook LEE ,  Sang-jin HYUN

IPC: H01L29/66 ,  H01L27/11 ,  H01L27/092 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/45

Abstract: An integrated circuit device includes a fin-type active region protruding from a top surface of a substrate and extending in a first direction parallel to the top surface of the substrate, a gate structure intersecting with the fin-type active region and extending on the substrate in a second direction perpendicular to the first direction, a source/drain region on a first side of the gate structure, a first contact structure on the source/drain region, and a contact capping layer on the first contact structure. A top surface of the first contact structure has a first width in the first direction, a bottom surface of the contact capping layer has a second width greater than the first width stated above in the first direction, and the contact capping layer includes a protruding portion extending outward from a sidewall of the first contact structure.

公开(公告)号：US20200035796A1

公开(公告)日：2020-01-30

申请号：US16404857

申请日：2019-05-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-yeon LEE ,  Jin-wook LEE ,  Min-chan GWAK ,  Kye-Hyun BAEK ,  Hong-bae PARK

IPC: H01L29/417 ,  H01L27/088 ,  H01L29/78 ,  H01L21/8234

Abstract: An integrated circuit device including a substrate; a fin-type active region protruding from the substrate; a gate line intersecting the fin-type active region and covering a top surface and side walls thereof; a gate insulating capping layer covering the gate line; source/drain regions at sides of the gate line on the fin-type active region; first conductive plugs connected to the source/drain regions; a hard mask layer covering the first conductive plugs; and a second conductive plug between the first conductive plugs, the second conductive plug connected to the gate line by passing through the gate insulating capping layer and having a top surface higher than the top surface of each first conductive plug, wherein the hard mask layer protrudes from the first conductive plugs and toward the second conductive plug so that a portion of the hard mask layer overhangs from an edge of the first conductive plugs.

公开(公告)号：US20180277547A1

公开(公告)日：2018-09-27

申请号：US15992623

申请日：2018-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-bae PARK ,  Ja-hum KU ,  Myeong-cheol KIM ,  Jin-wook LEE ,  Sung-kee HAN

IPC: H01L27/11 ,  H01L27/092 ,  H01L27/02 ,  H01L21/8238 ,  H01L23/528 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L27/1104 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/823821 ,  H01L21/823828 ,  H01L21/823871 ,  H01L21/823878 ,  H01L21/845 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/785

Abstract: A method includes providing a plurality of active regions on a substrate, and at least a first device isolation layer between two of the plurality of active regions, wherein the plurality of active regions extend in a first direction; providing a gate layer extending in a second direction, the gate layer forming a plurality of gate lines including a first gate line and a second gate line extending in a straight line with respect to each other and having a space therebetween, each of the first gate line and second gate line crossing at least one of the active regions, providing an insulation layer covering the first device isolation layer and covering the active region around each of the first and second gate lines; and providing an inter-gate insulation region in the space between the first gate line and the second gate line.