公开(公告)号：US11692920B2

公开(公告)日：2023-07-04

申请号：US17115167

申请日：2020-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young Suk Jung ,  Bok Soon Kwon ,  Joo Young Kim ,  Don-Wook Lee ,  Suk Gyu Hahm

IPC: G01N9/36 ,  G01N21/31 ,  G01N29/04 ,  G01N29/24 ,  G01N29/46 ,  G01N9/00 ,  G01N9/24 ,  G01N33/44

CPC classification number: G01N9/36 ,  G01N9/00 ,  G01N9/24 ,  G01N21/31 ,  G01N29/041 ,  G01N29/24 ,  G01N29/46 ,  G01N33/442 ,  G01N2203/0075 ,  G01N2203/0092 ,  G01N2291/01 ,  G01N2291/0235 ,  G01N2291/0251

Abstract: Disclosed are an apparatus for measuring an in-situ crosslink density includes a support configured to fix or support a cross-linkable structure, a light source configured to irradiate light for crosslinking to the cross-linkable structure, and a probe configured to provide in-situ micro-deformation to the cross-linkable structure, wherein the in-situ crosslink density of the cross-linkable structure is measured from a stress-strain phase lag of the cross-linkable structure by the in-situ micro-deformation, a method of measuring the in-situ crosslink density, a method of manufacturing a crosslinked product, a crosslinked product obtained by the method, and a polymer substrate and an electronic device including the crosslinked product.

公开(公告)号：US11569463B2

公开(公告)日：2023-01-31

申请号：US17081376

申请日：2020-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Youngjun Yun ,  Don-Wook Lee

IPC: H01L51/00 ,  H01L27/32 ,  G01N27/30

Abstract: A stretchable device includes a substrate, the substrate including first regions having a first stiffness and a second region between adjacent first regions and having a second stiffness that is lower than the first stiffness, a unit device array including unit devices on separate, respective first regions of the substrate, and an encapsulant covering the unit device array. The unit device array includes pixel electrodes isolated on separate, respective first regions of the substrate, common electrodes isolated on separate, respective first regions and each facing a separate pixel electrode, the stretchable device configured to apply a same voltage to the plurality of common electrodes, and active layers on separate, respective first regions and each between a separate pixel electrode and a separate common electrode.

公开(公告)号：US08614441B2

公开(公告)日：2013-12-24

申请号：US13904512

申请日：2013-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bon Won Koo ,  Joon Yong Park ,  Jung Seok Hahn ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

IPC: H01L29/08

CPC classification number: H01L51/0512 ,  H01L27/283 ,  H01L51/0005 ,  H01L51/0558

Abstract: Disclosed is a method for forming banks during the fabrication of electronic devices incorporating an organic semiconductor material that includes preparing an aqueous coating composition having at least a water-soluble polymer, a UV curing agent and a water-soluble fluorine compound. This coating composition is applied to a substrate, exposed using UV radiation and then developed using an aqueous developing composition to form the bank pattern. Because the coating composition can be developed using an aqueous composition rather than an organic solvent or solvent system, the method tends to preserve the integrity of other organic structures present on the substrate. Further, the incorporation of the fluorine compound in the aqueous solution provides a degree of control over the contact angles exhibited on the surface of the bank pattern and thereby can avoid or reduce subsequent surface treatments.

Abstract translation: 公开了一种在制造包含有机半导体材料的电子器件的过程中形成堤的方法，包括制备至少具有水溶性聚合物，UV固化剂和水溶性氟化合物的水性涂料组合物。 将该涂料组合物施加到基材上，使用UV辐射曝光，然后使用水性显影组合物显影以形成图案。 因为涂料组合物可以使用水性组合物而不是有机溶剂或溶剂体系显影，所以该方法倾向于保持存在于基材上的其它有机结构的完整性。 此外，氟化合物在水溶液中的引入提供了对在堤形图案的表面上显示的接触角的控制程度，从而可以避免或减少随后的表面处理。

公开(公告)号：US12256585B2

公开(公告)日：2025-03-18

申请号：US17675387

申请日：2022-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Byong Gwon Song ,  Jeong Il Park ,  Jiyoung Jung

IPC: H10K10/46 ,  H01L29/423 ,  H10K10/84 ,  H10K19/10 ,  H10K71/20 ,  H10K85/60

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

公开(公告)号：US12112866B2

公开(公告)日：2024-10-08

申请号：US17392772

申请日：2021-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongjun Lee ,  Joo Young Kim ,  Youngjun Yun ,  Hyun Bum Kang ,  Jong Won Chung

IPC: H01B5/14 ,  C23C14/24 ,  H01B5/16 ,  H01L27/12 ,  H01L27/146 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01B5/14 ,  C23C14/24 ,  H01B5/16 ,  H01L27/1218 ,  H01L27/1244 ,  H01L27/14678 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/78603

Abstract: A stacked structure for a stretchable device includes a stretchable layer including an elastic polymer, and a conductive layer on the stretchable layer and including a metal, wherein the stretchable layer includes a first depth region and a second depth region sequentially disposed in a depth direction from a surface of the stretchable layer that is in contact with the conductive layer and the first depth region includes the metal.

公开(公告)号：US11296289B2

公开(公告)日：2022-04-05

申请号：US16203831

申请日：2018-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Byong Gwon Song ,  Jeong Il Park ,  Jiyoung Jung

IPC: H01L51/10 ,  H01L27/28 ,  H01L21/84 ,  H01L51/05 ,  H01L51/00 ,  H01L29/423 ,  H01L51/40 ,  H01L21/336

Abstract: A thin film transistor includes a gate electrode, a semiconductor layer overlapped with the gate electrode, a gate insulating layer between the gate electrode and the semiconductor layer, and a source electrode and a drain electrode electrically connected to the semiconductor layer. The semiconductor layer includes a plurality of holes. The gate insulating layer may include a plurality of recess portions at a surface of the gate insulating layer facing the semiconductor layer. A method of manufacturing the thin film transistor is provided. A thin film transistor array panel and an electronic device may include the thin film transistor.

公开(公告)号：US10727426B2

公开(公告)日：2020-07-28

申请号：US15384968

申请日：2016-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong Choi ,  Eun Kyung Lee ,  Joo Young Kim ,  Jeong Il Park ,  Youngjun Yun

IPC: H01L51/05 ,  H01L51/00

Abstract: A thin film transistor includes a gate electrode, an organic semiconductor overlapping the gate electrode, an insulator between the gate electrode and the organic semiconductor, and a source electrode and a drain electrode electrically connected to the organic semiconductor, respectively. The organic semiconductor is capable of being applied by a solution process, the insulator includes an inorganic insulating layer having a surface facing the organic semiconductor, and the surface includes a coating with a polysiloxane having an acrylic terminal group.

公开(公告)号：US20180233569A1

公开(公告)日：2018-08-16

申请号：US15864275

申请日：2018-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suk Gyu Hahm ,  Jeong Il Park ,  Youngjun Yun ,  Joo Young Kim ,  Yong Uk Lee

IPC: H01L29/423 ,  H01L29/417 ,  H01L21/28 ,  H01L51/05

CPC classification number: H01L29/42384 ,  H01L21/28158 ,  H01L27/3274 ,  H01L29/41733 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/055

Abstract: A thin film transistor includes a gate electrode on a semiconductor layer, a first insulation layer between the semiconductor layer and the gate electrode, a second insulation layer on the gate electrode, and a source and drain electrode on the semiconductor layer. The gate electrode includes a first part and a second part adjacent to the first part. A width of the second part is greater than a width of the first part. The source electrode and the drain electrode are on the semiconductor layer and arranged such that the first part of the gate electrode is between the source electrode and the drain electrode. The source electrode and the drain electrode are electrically connected to the semiconductor layer through the first insulation layer and the second insulation layer, respectively. A space between the source electrode and the drain electrode is greater than the width of the first part.

公开(公告)号：US09431619B2

公开(公告)日：2016-08-30

申请号：US14445862

申请日：2014-07-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung Lee ,  Ji Young Jung ,  Joo Young Kim ,  Jeong Il Park

IPC: H01L51/05

CPC classification number: H01L51/0537

Abstract: An insulating composition includes a nanoparticle-polyorganosiloxane composite, a cross-linking agent, and a solvent, an insulator includes the insulating composition, and an electronic device includes the insulator.

Abstract translation: 绝缘组合物包括纳米颗粒 - 聚有机硅氧烷复合物，交联剂和溶剂，绝缘体包括绝缘组合物，并且电子器件包括绝缘体。

公开(公告)号：US12245368B2

公开(公告)日：2025-03-04

申请号：US17336755

申请日：2021-06-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongjun Lee ,  Gae Hwang Lee ,  Jong Won Chung ,  Joo Young Kim ,  Youngjun Yun

IPC: H05K1/02 ,  H01L27/12 ,  H05K1/03 ,  H10K77/10 ,  H05K1/18 ,  H10K102/00

Abstract: A stretchable substrate includes a first elastomer, a plurality of unit devices on the stretchable substrate, a connecting wire configured to electrically connect adjacent unit devices, and a plurality of auxiliary structures each including a second elastomer and each at least partially overlapping with at least one unit device or the connecting wire, wherein the first elastomer and the second elastomer are separate, respective polymers that commonly include at least one structural unit.