Abstract:
A polishing slurry, and a method of manufacturing a semiconductor device using the polishing slurry are provided. The polishing slurry includes nano-abrasive particles having a Mohs hardness greater than about 5, and soft particles having a Mohs hardness lower than the Mohs hardness of the nano-abrasive particles, and wherein the nano-abrasive particles and the soft particles have a same sign of zeta potentials as each other in the polishing slurry.
Abstract:
An image scanning apparatus which reduces misalignment of documents includes a scanning unit configured to scan images from a first document and a second document having a width that is smaller than a width of the first document, and a document transfer unit configured to automatically feed the first document and the second document. The document transfer unit includes a frame including a feed tray on which the first document and the second document are stacked, a pickup module mounted on the frame, and configured to pick up the first document and the second document and to transfer the first document and the second document, and an auxiliary guide installed in the frame, and configured to change a position according to a height of the first document stacked on the feed tray and to support one side in width direction of the second document.
Abstract:
A polishing slurry and a method of manufacturing a semiconductor device using the polishing slurry. The polishing slurry includes plate-shaped particles having a Mohs hardness of less than or equal to about 5, and a spherical abrasive. The plate-shaped particles have a thermal conductivity in a dimensional direction of greater than or equal to about 10 W/mK, and the plate-shaped particles have a larger average particle size than the spherical abrasive. Also, the plate-shaped particles and the spherical abrasive are not chemically bonded to the other.
Abstract:
A three-dimensional semiconductor memory device may include a substrate, a stack structure including interlayer dielectric layers and gate electrodes alternately and repeatedly stacked on the substrate, and vertical channel structures provided in vertical channel holes penetrating the stack structure. Each of the vertical channel structures may include a data storage pattern covering an inner side surface of each of the vertical channel holes, a vertical semiconductor pattern covering the data storage pattern, and a gapfill insulating pattern filling an internal space enclosed by the vertical semiconductor pattern. The vertical semiconductor pattern may have a first surface which is in contact with the gapfill insulating pattern, and a second surface which is in contact with the data storage pattern. A germanium concentration in the vertical semiconductor pattern may decrease in a direction from the first surface toward the second surface.
Abstract:
A semiconductor device includes lower and upper selection lines, a cell gate structure, a lower dummy structure and an upper dummy structure. The cell gate structure is between the lower and upper selection lines and includes cell gate electrodes stacked in a first direction. The lower dummy structure is between the lower selection line and the cell gate structure and includes a lower dummy gate line spaced from a lowermost one of the cell gate electrodes by a first distance. The upper dummy structure is between the upper selection line and the cell gate structure and includes an upper dummy gate line spaced from an uppermost one of the cell gate electrodes by a second distance. The cell gate electrodes are spaced by a third distance less than each of the first and second distances.
Abstract:
An image reading apparatus includes a document tray, and an automatic document feeding unit disposed at an upper side of the document tray to transport documents as to pass through the upper side of the document tray. The automatic document feeding unit includes a body; a document supplying tray having a first width corresponding to a width of a first document to be scanned and at which the first document to be scanned is loaded; and an auxiliary guide having a second width that is smaller than the first width to correspond to a second document having a width smaller than the width of the first document and is installed at the document supplying tray. The auxiliary guide includes a guide portion to support both widthwise sides of the document to be scanned while entered toward an upper side of the mounting unit.