公开(公告)号：US20170025472A1

公开(公告)日：2017-01-26

申请号：US15284519

申请日：2016-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： WOOJIN KIM ,  KI WOONG KIM ,  WOO CHANG LIM

IPC: H01L27/22 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L27/222 ,  G11C11/161 ,  H01F10/3204 ,  H01F10/3254 ,  H01F10/3286 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic memory device may include a free magnetic structure and a reference magnetic structure that are separated from each other by a tunnel barrier. The free magnetic structure may include an exchange-coupling layer, and first and second free layers that are separated from each other by the exchange-coupling layer. The first free layer may be provided between the second free layer and the tunnel barrier. A thickness of the first free layer may be greater than a first maximum anisotropy thickness, being the thickness at which the first free layer has maximum perpendicular anisotropy. A thickness of the second free layer may be smaller than a second maximum anisotropy thickness, being the thickness at which the second free layer has maximum perpendicular anisotropy. A magnetic tunnel junction having two free layers with different thicknesses can enable a magnetic memory device that has increased MR ratio and reduced switching current.

Abstract translation: 磁存储器件可以包括通过隧道势垒彼此分离的自由磁结构和参考磁性结构。 自由磁结构可以包括交换耦合层，以及通过交换耦合层彼此分离的第一和第二自由层。 第一自由层可以设置在第二自由层和隧道势垒之间。 第一自由层的厚度可以大于第一最大各向异性厚度，即第一自由层具有最大垂直各向异性的厚度。 第二自由层的厚度可以小于第二最大各向异性厚度，即第二自由层具有最大垂直各向异性的厚度。 具有两个具有不同厚度的自由层的磁性隧道结可实现具有增加的MR比和降低的开关电流的磁存储器件。

公开(公告)号：US20250169371A1

公开(公告)日：2025-05-22

申请号：US18676799

申请日：2024-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： KI WOONG KIM ,  JEONGCHUN RYU ,  KWANG SEOK KIM ,  SEONGGEON PARK ,  SEUNGJAE LEE

IPC: H10N50/10 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

Abstract: A magnetic tunnel junction element including: a pinned layer and a free layer facing each other; a buffer layer on the pinned layer; an auxiliary layer on the buffer layer; a polarization enhancement layer between the auxiliary layer and the free layer; and a tunnel barrier layer between the polarization enhancement layer and the free layer, wherein the buffer layer is amorphous and includes CoFeBX, and X is W, Mo, Re or Ta, the auxiliary layer includes W, Mo, or Ta.

公开(公告)号：US20210359198A1

公开(公告)日：2021-11-18

申请号：US17134456

申请日：2020-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： HYUNGJONG JEONG ,  KI WOONG KIM ,  YOUNGHYUN KIM ,  JUNGHWAN PARK ,  BYOUNGJAE BAE ,  SE CHUNG OH ,  JUNGMIN LEE ,  KYUNGIL HONG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12

Abstract: A magnetic memory device may include an interlayer insulating layer on a substrate, a bottom electrode contact disposed in the interlayer insulating layer, and a magnetic tunnel junction pattern on the bottom electrode contact. The bottom electrode contact may include a second region and a first region, which are sequentially disposed in a first direction perpendicular to a top surface of the substrate so that the second region is between the first region and the top surface of the substrate. A first width of the first region may be smaller than a second width of the second region, when measured in a second direction parallel to the top surface of the substrate.