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公开(公告)号：US10685713B2
公开(公告)日：2020-06-16
申请号：US16163968
申请日：2018-10-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jooyong Park , Jin-Young Kim , Kuihan Ko , Han Il Park , Bongsoon Lim
Abstract: A storage device includes a nonvolatile memory device that includes memory blocks, each including memory cells, and a controller that receives a first write request from an external host device. Depending on the first write request, the controller transmits a first sanitize command to the nonvolatile memory device and transmits first write data and a first write command associated with the first write request to the nonvolatile memory device. The nonvolatile memory device is configured to sanitize first data previously written to first memory cells of a first memory block of the memory blocks in response to the first sanitize command. The nonvolatile memory device is further configured to write the first write data to second memory cells of the first memory block in response to the first write command.
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2.发明公开公开(公告)号：US20240233857A1
公开(公告)日：2024-07-11
申请号：US18395010
申请日：2023-12-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kuihan Ko , Sang-Won Park , Won-Taeck Jung , Heewon Son , Bongsoon Lim
IPC: G11C29/56
CPC classification number: G11C29/56004 , G11C29/56012 , G11C29/56016 , G11C2029/5602
Abstract: A memory device includes a memory cell array, a reference generating circuit, a row decoding circuit that is connected to the memory cell array through word lines, a page buffer circuit that is connected to the memory cell array through bit lines, a data input/output circuit that is connected to the page buffer circuit through a data line, a buffer circuit, a control logic circuit that performs logic sequences, based on the internal clock signal and the internal power, and a test mode circuit. When the memory device enters a test mode, the test mode circuit disables a part of components of the reference generating circuit. In the test mode, the control logic circuit performs the logic sequences by using an external clock signal provided from an external device.
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公开(公告)号：US20230100548A1
公开(公告)日：2023-03-30
申请号：US17742879
申请日：2022-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kuihan Ko , Sangwon Park , Minyong Kim , Jekyung Choi , Junho Choi
Abstract: A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.
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公开(公告)号：US20220028466A1
公开(公告)日：2022-01-27
申请号：US17324787
申请日：2021-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Bohchang Kim , Wontaeck Jung , Kuihan Ko , Jaeyong Jeong
Abstract: A memory device including: a memory cell array including a plurality of memory cells forming a plurality of strings in a vertical direction with a substrate; and a control logic configured to detect a not-open string (N/O string) from the plurality of strings in response to a write command and convert pieces of target data to be programmed on a plurality of target memory cells in the N/O string so that the pieces of target data have a value that limits a number of times a program voltage is applied to the plurality of target memory cells.
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公开(公告)号：US09378828B2
公开(公告)日：2016-06-28
申请号：US14931936
申请日：2015-11-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Wan Nam , Kuihan Ko , Yang-Lo Ahn , Kitae Park
CPC classification number: G11C16/10 , G11C7/04 , G11C16/0483 , G11C16/08 , G11C16/3427
Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.
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Patent Agency Ranking
公开(公告)号：US09208886B2
公开(公告)日：2015-12-08
申请号：US14197723
申请日：2014-03-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Wan Nam , Kuihan Ko , Yang-Lo Ahn , Kitae Park
CPC classification number: G11C16/10 , G11C7/04 , G11C16/0483 , G11C16/08 , G11C16/3427
Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.
Abstract translation: 非易失性存储器件的驱动方法包括接收程序命令和地址。 该方法包括根据与所接收的地址相对应的所选择的字线的位置来改变由未选字线形成的多个区域中的多个相邻区域的数量。 该方法还包括将不同的区域电压施加到相邻区域和剩余区域的数量。 非易失性存储装置包括形成为穿过板状堆叠在基板上的字线的多个串。
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公开(公告)号：US12230343B2
公开(公告)日：2025-02-18
申请号：US17324787
申请日：2021-05-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Bohchang Kim , Wontaeck Jung , Kuihan Ko , Jaeyong Jeong
Abstract: A memory device including: a memory cell array including a plurality of memory cells forming a plurality of strings in a vertical direction with a substrate; and a control logic configured to detect a not-open string (N/O string) from the plurality of strings in response to a write command and convert pieces of target data to be programmed on a plurality of target memory cells in the N/O string so that the pieces of target data have a value that limits a number of times a program voltage is applied to the plurality of target memory cells.
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公开(公告)号：US20190333586A1
公开(公告)日：2019-10-31
申请号：US16163968
申请日：2018-10-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jooyong Park , Jin-Young Kim , Kuihan Ko , Han Il Park , Bongsoon Lim
Abstract: A storage device includes a nonvolatile memory device that includes memory blocks, each including memory cells, and a controller that receives a first write request from an external host device. Depending on the first write request, the controller transmits a first sanitize command to the nonvolatile memory device and transmits first write data and a first write command associated with the first write request to the nonvolatile memory device. The nonvolatile memory device is configured to sanitize first data previously written to first memory cells of a first memory block of the memory blocks in response to the first sanitize command. The nonvolatile memory device is further configured to write the first write data to second memory cells of the first memory block in response to the first write command.
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公开(公告)号：US20250014670A1
公开(公告)日：2025-01-09
申请号：US18399872
申请日：2023-12-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang-Won Park , Kuihan Ko , Heewon Son
Abstract: A non-volatile integrated circuit memory device includes a first memory block having first and second memory sub-blocks therein, and a second memory block having third and fourth memory sub-blocks therein. A sub-block manager is also provided, which is configured to: (i) determine whether the second memory sub-block is a reclaim sub-block when the first memory sub-block has an uncorrectable error (UECC) therein, and (ii) reclaim the first and second memory sub-blocks to the third and fourth memory sub-blocks, respectively, in response to determining that the second memory sub-block is a reclaim sub-block.
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公开(公告)号：US12100452B2
公开(公告)日：2024-09-24
申请号：US17742879
申请日：2022-05-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Kuihan Ko , Sangwon Park , Minyong Kim , Jekyung Choi , Junho Choi
CPC classification number: G11C16/0433 , G11C16/08 , G11C16/102 , G11C16/24 , G11C16/26
Abstract: A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.
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