公开(公告)号：US20250004370A1

公开(公告)日：2025-01-02

申请号：US18392365

申请日：2023-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomseok KIM ,  Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Chanjae AHN ,  Changheon LEE ,  Kyuhyun IM ,  Sungwon CHOI

IPC: G03F7/038 ,  C08F12/22 ,  G03F7/004 ,  G03F7/20

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1, a resist composition including the polymer, and a method of forming a pattern using the resist composition: wherein descriptions of L11 to L14, a11 to a13, A11, X11, R11, R12, b12 and p in Formula 1 are provided in the present specification.

公开(公告)号：US20240327338A1

公开(公告)日：2024-10-03

申请号：US18483895

申请日：2023-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Aram JEON ,  Hana KIM ,  Beomseok KIM ,  Hoyoon PARK ,  Kyuhyun IM ,  Jinwon JEON ,  Sungwon CHOI

IPC: C07C309/58 ,  C07C309/42 ,  G03F7/004 ,  G03F7/029 ,  G03F7/20

CPC classification number: C07C309/58 ,  C07C309/42 ,  G03F7/0045 ,  G03F7/0048 ,  G03F7/029 ,  G03F7/2004

Abstract: Provided are an organic salt represented by Formula 1, a resist composition including the same, and a method of forming a pattern by using the same:


A11+B11−  Formula 1



wherein, in Formula 1,
A11+ is represented by Formula 1A, and B11− is represented by Formula 1B,










wherein descriptions of R11 to R13, L21, L22, a21, a22, R21, R22, Rf, b22, c11 and n11 in Formulae 1A and 1B are provided herein.

公开(公告)号：US20240319595A1

公开(公告)日：2024-09-26

申请号：US18612246

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyoon PARK ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Minsang KIM ,  Beomseok KIM ,  Hana KIM ,  Hyeran KIM ,  Chanjae AHN ,  Kyuhyun IM ,  Sungwon CHOI

IPC: G03F7/039

CPC classification number: G03F7/039

Abstract: Provided are a photoreactive polymer compound including a first repeating unit represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition:




A description of Formula 1 is provided herein.

公开(公告)号：US20240231225A1

公开(公告)日：2024-07-11

申请号：US18325465

申请日：2023-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Youngmin NAM ,  Chanjae AHN ,  Changheon LEE ,  Kyuhyun IM ,  Sungwon CHOI ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/20 ,  G03F7/32

CPC classification number: G03F7/0044 ,  G03F7/2004 ,  G03F7/32

Abstract: Provided are a resist composition and a pattern forming method using the same. The resist composition may include an organometallic compound represented by Formula 1 below and a polymer repeating unit represented by Formula 2 below.




In Formulas 1 and 2, descriptions of M11, R11, R12, n, A21, L21 to L24, a21 to a24, R21, R22, b22, p, and X21 refer to the specification.

公开(公告)号：US20250102906A1

公开(公告)日：2025-03-27

申请号：US18420038

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon JEON ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Changheon LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Minyoung HA

IPC: G03F7/004 ,  C07F7/22

Abstract: Provided are an organometallic compound represented by one of Formulae 1-1 to 1-4, a resist composition including the same, and a pattern formation method using the resist composition: M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X14 in Formulae 1-1 to 1-4 are as described in the specification.

公开(公告)号：US20240319592A1

公开(公告)日：2024-09-26

申请号：US18491310

申请日：2023-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Kyuhyun IM ,  Jinwon JEON ,  Jungha CHAE ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/038

CPC classification number: G03F7/0042 ,  G03F7/0048 ,  G03F7/0382

Abstract: Provided are a resist composition and a method of forming a pattern using the same, wherein the resist composition may include an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below.




For a description of M11, R11, R12, n, A21, L21 to L23, A21 to a23, R21 to R22, b22, and p in Formula 1 and Formula 2, the specification is referred to.

公开(公告)号：US20220029112A1

公开(公告)日：2022-01-27

申请号：US17488778

申请日：2021-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoonhyun KWAK ,  Kum Hee LEE ,  Whail CHOI ,  Kyuyoung HWANG ,  Seungyeon KWAK ,  Sangdong KIM ,  Sunghun LEE ,  Kyuhyun IM ,  Yongsuk CHO ,  Jongwon CHOI

IPC: H01L51/00 ,  C07F15/00 ,  C09K11/06

Abstract: An organometallic compound represented by Formula 1: wherein, in Formula 1, R1 to R12 and R16 are the same as described in the specification.

公开(公告)号：US20160141526A1

公开(公告)日：2016-05-19

申请号：US14676242

申请日：2015-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： BangLin LEE ,  Hyeonho CHOI ,  Youngjae PARK ,  Kyuhyun IM

IPC: H01L51/00 ,  C09K11/06 ,  C07F15/00

CPC classification number: C09K11/06 ,  C07F15/0033 ,  C09K2211/1007 ,  C09K2211/1014 ,  C09K2211/1029 ,  C09K2211/185 ,  H01L51/0081 ,  H01L51/0085 ,  H01L51/5016 ,  H01L2251/552

Abstract: An organometallic compound represented by Formula 1: wherein in Formula 1, groups and variables are the same as described in the specification.

Abstract translation: 由式1表示的有机金属化合物：其中在式1中，基团和变量与说明书中描述的相同。

公开(公告)号：US20250043046A1

公开(公告)日：2025-02-06

申请号：US18405175

申请日：2024-01-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Jeongho MUN ,  Seonghyeon AHN ,  Chanjae AHN ,  Jaejun LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Sungwon CHOI

IPC: C08F120/28 ,  G03F7/004 ,  G03F7/20

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 and having a glass transition temperature of 50° C. or less, a polymer-containing composition including the polymer, and a method of forming a pattern by using the polymer-containing composition: wherein, in Formula 1, descriptions of L11 to L13, a11 to a13, An, R11, R12, b12, and p1 are provided in the present specification.

公开(公告)号：US20240239820A1

公开(公告)日：2024-07-18

申请号：US18329976

申请日：2023-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghyun HAN ,  Haengdeog Koh ,  Yoonhyun Kwak ,  Kyungoh Kim ,  Mijeong Kim ,  Jaejun Lee ,  Hasup Lee ,  Kyuhyun IM ,  Sukkoo Hong

IPC: C07F7/22 ,  G03F7/004 ,  G03F7/20

CPC classification number: C07F7/2224 ,  G03F7/0042 ,  G03F7/0048 ,  G03F7/2004

Abstract: Provided are an organometallic compound represented by one of Formulas 1-1 to 1-4 below.






a resist composition including the same, and a pattern forming method using the same. For descriptions of M11, L11 to L14, a11 to a14, R11 to R14, X11 to X14, n11 to n15, Y11 to Y13, and R15 to R17 in Formulas 1-1 to 1-4, refer to the specification.