公开(公告)号：US10665702B2

公开(公告)日：2020-05-26

申请号：US16151511

申请日：2018-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung Gil Kang ,  Ill Seo Kang ,  Yong Hee Park ,  Sang Hoon Baek ,  Keon Yong Cheon

IPC: H01L29/66 ,  H01L29/732 ,  H01L27/082 ,  H01L29/06 ,  H01L29/08 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L21/308 ,  H01L29/10 ,  H01L27/06 ,  H01L21/8249 ,  H01L21/8238

Abstract: A vertical bipolar transistor including a substrate including a first well of a first conductivity type and a second well of a second conductivity type different from the first conductivity type, the first well adjoining the second well, a first fin extending, from the first well, a second fin extending from the first well, a third fin extending from the second well, a first conductive region on the first fin, having the second conductivity type and configured to serve as an emitter of the vertical bipolar transistor, a second conductive region on the second fin, having the first conductivity type, and configured to serve as a base of the vertical bipolar transistor, and a third conductive region on the third fin, having the second conductivity type, and configured to serve as a collector of the vertical bipolar transistor may be provided.

公开(公告)号：US09905645B2

公开(公告)日：2018-02-27

申请号：US15256136

申请日：2016-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung Gil Kang ,  Seung Han Park ,  Yong Hee Park ,  Sang Hoon Baek ,  Sang Woo Lee ,  Keon Yong Cheon ,  Sung Man Whang

IPC: H01L21/336 ,  H01L29/778 ,  H01L29/78 ,  H01L29/08 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L29/0847 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/42376 ,  H01L29/7827 ,  H01L29/7851

Abstract: A vertical field effect transistor is provided as follows. A substrate has a lower drain and a lower source arranged along a first direction in parallel to an upper surface of the substrate. A fin structure is disposed on the substrate and extended vertically from the upper surface of the substrate. The fin structure includes a first end portion and a second end portion arranged along the first direction. A bottom surface of a first end portion of the fin structure and a bottom surface of a second end portion of the fin structure overlap the lower drain and the lower source, respectively. The fin structure includes a sidewall having a lower sidewall region, a center sidewall region and an upper sidewall region. A gate electrode surrounds the center side sidewall region of the fin structure.