专利检索 ap:("SAMSUNG ELECTRONICS CO., LTD.") AND inv:"Sang Woo Lee" 第 1 页

1.

发明申请
SEMICONDUCTOR MEMORY DEVICE 有权

公开(公告)号：US20210257369A1

公开(公告)日：2021-08-19

申请号：US17313570

申请日：2021-05-06

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Beomyong Hwang , Min Hee Cho , Hei Seung Kim , Mirco Cantoro , Hyunmog Park , Woo Bin Song , Sang Woo Lee

IPC分类号： H01L27/108 , G11C11/402

摘要： A semiconductor device includes a substrate, a peripheral circuit layer, a first active pattern, a gate electrode, a first insulating layer, a conductive contact, and a second active pattern. The peripheral circuit layer is disposed on the substrate, and the peripheral circuit layer includes logic transistors and an interconnection layer that is disposed on the logic transistors. The first active pattern is disposed on the peripheral circuit layer. The gate electrode is disposed on a channel region of the first active pattern. The first insulating layer is disposed on the first active pattern and the gate electrode. The conductive contact is disposed in the first insulating layer and is electrically connected to a first source/drain region of the first active pattern, and the second active pattern is disposed on the first insulating layer. The channel region of the second active pattern vertically overlaps with the conductive contact.

2.

发明授权
Air conditioner and method of controlling the same 有权

公开(公告)号：US11035583B2

公开(公告)日：2021-06-15

申请号：US15992699

申请日：2018-05-30

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Jin Kim , Ju-Hyun Kang , Young-Jae Kim , Byung Yul So , Yong-Gak Kim , In-Jung Baek , Na Yeong Byeon , Moo Gyo Seo , Hyeong Joon Seo , Seung Cheon Yu , Sang Woo Lee , Hyo Kyu Lee , Jin Ho Lim , Min-Gi Cho , Hyeong Kyu Cho , Jun Hwang , Do Yeon Kim , Hyun Ah Kim , Yong Ho Seo , Woo Seog Song , Hyun-Joo Song , Young Sun Shin , Joon-Ho Yoon , Bu Youn Lee , Jung Dae Lee , Chang Seon Lee , Min Gu Jeon , Hee Jae Jeong

IPC分类号： F24F11/30 , F24F1/0047 , F24F1/0057 , F24F11/79 , F24F11/77 , F24F1/0011 , F24F1/0022 , F24F1/0033 , F24F13/24 , F24F13/28 , F24F110/00 , F24F110/10 , F24F120/12 , F24F11/65 , F24F11/41 , F24F11/52

摘要： An air conditioner includes a housing having a suction port and a discharge port, a main fan configured to draw air into the housing through the suction port and discharge air from the housing through the discharge port, an auxiliary fan configured to draw, into the housing, air discharged by the main fan and a controller configured to control a rotational speed of the auxiliary fan to change a direction in which air is discharged from the housing.

3.

发明授权
Three-dimensional semiconductor devices 有权

公开(公告)号：US11901356B2

公开(公告)日：2024-02-13

申请号：US16817069

申请日：2020-03-12

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Seungha Oh , Pil-Kyu Kang , Kughwan Kim , Weonhong Kim , Yuichiro Sasaki , Sang Woo Lee , Sungkeun Lim , Yongho Ha , Sangjin Hyun

IPC分类号： H01L27/06 , H01L23/48 , H10B41/60 , H10B43/20 , H10B63/00

CPC分类号： H01L27/0688 , H01L23/481 , H10B41/60 , H10B43/20 , H10B63/30 , H10B63/84

摘要： A three-dimensional semiconductor device includes a lower substrate, a plurality of lower transistors disposed on the lower substrate, an upper substrate disposed on the lower transistors, a plurality of lower conductive lines disposed between the lower transistors and the upper substrate, and a plurality of upper transistors disposed on the upper substrate. At least one of the lower transistors is connected to a corresponding one of the lower conductive lines. Each of the upper transistors includes an upper gate electrode disposed on the upper substrate, a first upper source/drain pattern disposed in the upper substrate at a first side of the upper gate electrode, and a second upper source/drain pattern disposed in the upper substrate at a second, opposing side of the upper gate electrode. The upper gate electrode includes silicon germanium (SiGe).

4.

发明授权
Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material 有权

公开(公告)号：US11862476B2

公开(公告)日：2024-01-02

申请号：US17076025

申请日：2020-10-21

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Minhee Cho , Junsoo Kim , Ho Lee , Chankyung Kim , Hei Seung Kim , Jaehong Min , Sangwuk Park , Woo Bin Song , Sang Woo Lee

IPC分类号： H01L21/34 , H10B12/00 , H01L21/02 , H01L21/28

CPC分类号： H01L21/34 , H01L21/02 , H01L21/28 , H10B12/053 , H10B12/31 , H10B12/482

摘要： A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

5.

发明申请
SEMICONDUCTOR DEVICE INCLUDING ACTIVE REGION WITH VARIABLE ATOMIC CONCENTRATION OF OXIDE SEMICONDUCTOR MATERIAL AND METHOD OF FORMING THE SAME 审中-公开

公开(公告)号：US20190296018A1

公开(公告)日：2019-09-26

申请号：US16185892

申请日：2018-11-09

申请人： Samsung Electronics Co., Ltd.

发明人： Minhee Cho , Junsoo Kim , Ho Lee , Chankyung Kim , Hei Seung Kim , Jaehong Min , Sangwuk Park , Woo Bin Song , Sang Woo Lee

IPC分类号： H01L27/108

摘要： A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

6.

发明授权
Semiconductor device including oxide semiconductor layer 有权

公开(公告)号：US12034047B2

公开(公告)日：2024-07-09

申请号：US18056954

申请日：2022-11-18

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Woo Bin Song , Sang Woo Lee , Min Hee Cho

IPC分类号： H01L29/51 , H01L29/08 , H01L29/24 , H01L29/267 , H01L29/417 , H01L29/45 , H01L29/786

CPC分类号： H01L29/0847 , H01L29/24 , H01L29/267 , H01L29/41733 , H01L29/41775 , H01L29/45 , H01L29/516 , H01L29/517 , H01L29/7869

摘要： Aspects of the present inventive concept provide a semiconductor device capable of enhancing performance and reliability through source/drain engineering in a transistor including an oxide semiconductor layer. The semiconductor device includes a substrate, a metal oxide layer disposed on the substrate, a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer, a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween and each including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern, and a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern.

7.

发明授权
Air conditioner and method of controlling the same 有权

公开(公告)号：US11885514B2

公开(公告)日：2024-01-30

申请号：US17307522

申请日：2021-05-04

申请人： Samsung Electronics Co., Ltd.

发明人： Young-Jin Kim , Ju-Hyun Kang , Young-Jae Kim , Byung Yul So , Yong-Gak Kim , In-Jung Baek , Na Yeong Byeon , Moo Gyo Seo , Hyeong Joon Seo , Seung Cheon Yu , Sang Woo Lee , Hyo Kyu Lee , Jin Ho Lim , Min-Gi Cho , Hyeong Kyu Cho , Jun Hwang , Do Yeon Kim , Hyun Ah Kim , Yong Ho Seo , Woo Seog Song , Hyun-Joo Song , Young Sun Shin , Joon-Ho Yoon , Bu Youn Lee , Jung Dae Lee , Chang Seon Lee , Min Gu Jeon , Hee Jae Jeong

IPC分类号： F24F11/30 , F24F1/0047 , F24F1/0057 , F24F11/65 , F24F11/79 , F24F11/77 , F24F11/52 , F24F11/42 , F24F1/0011 , F24F1/0022 , F24F1/0033 , F24F13/24 , F24F13/28 , F24F110/00 , F24F110/10 , F24F120/12 , F24F11/41

CPC分类号： F24F11/30 , F24F1/0011 , F24F1/0022 , F24F1/0033 , F24F1/0047 , F24F1/0057 , F24F11/42 , F24F11/52 , F24F11/65 , F24F11/77 , F24F11/79 , F24F13/24 , F24F13/28 , F24F11/41 , F24F2110/00 , F24F2110/10 , F24F2120/12 , F24F2221/28

摘要： An air conditioner includes a housing having a suction port and a discharge port, a main fan configured to draw air into the housing through the suction port and discharge air from the housing through the discharge port, an auxiliary fan configured to draw, into the housing, air discharged by the main fan and a controller configured to control a rotational speed of the auxiliary fan to change a direction in which air is discharged from the housing.

8.

发明授权
Semiconductor memory device 有权

公开(公告)号：US11018137B2

公开(公告)日：2021-05-25

申请号：US16442769

申请日：2019-06-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Beomyong Hwang , Min Hee Cho , Hei Seung Kim , Mirco Cantoro , Hyunmog Park , Woo Bin Song , Sang Woo Lee

IPC分类号： H01L27/10 , G11C11/40 , H01L27/108 , G11C11/402

摘要： A semiconductor memory device includes a substrate, a first active pattern on the substrate, a gate electrode intersecting a channel region of the first active pattern, a first insulating layer covering the first active pattern and the gate electrode, a contact penetrating the first insulating layer so as to be electrically connected to a first source/drain region of the first active pattern, and a second active pattern on the first insulating layer. A channel region of the second active pattern vertically overlaps with the contact.