公开(公告)号：US11681219B2

公开(公告)日：2023-06-20

申请号：US16991281

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan Kim ,  Su Min Kim ,  Ju-Young Kim ,  Jinjoo Kim ,  Hyunwoo Kim ,  Juhyeon Park ,  Hyunji Song ,  Songse Yi ,  Suk Koo Hong

IPC: G03F7/004 ,  C08L35/00 ,  C07C381/12 ,  C08L25/06

CPC classification number: G03F7/0045 ,  C07C381/12 ,  C08L25/06 ,  C08L35/00

Abstract: A resist composition including a polymer; and a compound represented by Formula 1,






in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

公开(公告)号：US11069580B2

公开(公告)日：2021-07-20

申请号：US16793097

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongho Mun ,  Naery Yu ,  Sumin Kim ,  Songse Yi

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/3213

Abstract: A semiconductor device manufacturing method includes forming a gate dielectric layer surrounding first semiconductor patterns and second semiconductor patterns; forming a first organic pattern covering the second semiconductor patterns; forming a sacrificial pattern interposed between the first semiconductor patterns and exposing both side surfaces of the first semiconductor patterns, and a conductive pattern surrounding the second semiconductor patterns and disposed between the first organic pattern and the second semiconductor patterns; forming a second organic pattern covering the first semiconductor patterns, the gate dielectric layer, the sacrificial pattern, and the first organic pattern; and forming a cross-linking layer interposed between the first organic material pattern and the second organic material pattern.

公开(公告)号：US11662662B2

公开(公告)日：2023-05-30

申请号：US16994957

申请日：2020-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunji Song ,  Sukkoo Hong ,  Sumin Kim ,  Yechan Kim ,  Juyoung Kim ,  Jinjoo Kim ,  Hyunwoo Kim ,  Juhyeon Park ,  Songse Yi

IPC: G03F7/004 ,  G03F7/039 ,  C07D213/68 ,  C07D263/32 ,  C07D233/64 ,  C07D277/26

CPC classification number: G03F7/0045 ,  C07D213/68 ,  C07D233/64 ,  C07D263/32 ,  C07D277/26 ,  G03F7/0392

Abstract: A photo-decomposable compound, a photoresist composition, and a method of manufacturing an IC device, the compound generating acid upon exposure and acts as a quenching base that neutralizes acid in an unexposed state and being represented by Formula 1:






wherein, in Formula 1, Ra is a C5 to C40 substituted or unsubstituted cyclic hydrocarbon group including at least one nitrogen atom, Ya is a C1 to C20 divalent linear or cyclic hydrocarbon group, n is an integer of 1 to 5, and A+ is a counter ion.

公开(公告)号：US20240302742A1

公开(公告)日：2024-09-12

申请号：US18527056

申请日：2023-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Hwan Park ,  Sungwon Choi ,  Yoonhyun Kwak ,  Jeong Ho Mun ,  Juhyeon Park ,  Songse Yi ,  Hogeun Lee

IPC: G03F7/038 ,  C08F212/14 ,  C08F220/18 ,  C08F230/08 ,  H01L21/027

CPC classification number: G03F7/038 ,  C08F212/30 ,  C08F220/1807 ,  C08F230/08 ,  H01L21/0275

Abstract: A photoresist composition includes a nonionic non-chemically amplified photoresist composition including a photosensitive polymer that includes a first repeating unit having a polarity inversion group and a second repeating unit having a sensitizing group. A method of manufacturing an integrated circuit device includes forming a photoresist film on a feature layer by using the photoresist composition, exposing a first area, which is a portion of the photoresist film, to generate secondary electron from the second repeating unit in the first area and changing a polarity of the first repeating unit by using the secondary electrons in the first area to invert a polarity of the first area, removing a non-exposed area of the photoresist film by using a developer to form a photoresist pattern including the first area, and processing the feature layer by using the photoresist pattern.

公开(公告)号：US20210013110A1

公开(公告)日：2021-01-14

申请号：US16793097

申请日：2020-02-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongho MUN ,  Naery Yu ,  Sumin Kim ,  Songse Yi

IPC: H01L21/8238 ,  H01L27/092 ,  H01L21/3213

Abstract: A semiconductor device manufacturing method includes forming a gate dielectric layer surrounding first semiconductor patterns and second semiconductor patterns; forming a first organic pattern covering the second semiconductor patterns; forming a sacrificial pattern interposed between the first semiconductor patterns and exposing both side surfaces of the first semiconductor patterns, and a conductive pattern surrounding the second semiconductor patterns and disposed between the first organic pattern and the second semiconductor patterns; forming a second organic pattern covering the first semiconductor patterns, the gate dielectric layer, the sacrificial pattern, and the first organic pattern; and forming a cross-linking layer interposed between the first organic material pattern and the second organic material pattern.