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1.发明授权公开(公告)号：US10957848B2
公开(公告)日：2021-03-23
申请号：US16271721
申请日：2019-02-08
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S. P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: Devices are described that include a multi-layered structure that comprises three layers. The first layer is a magnetic Heusler compound, the second layer (acting as a spacer layer) is non-magnetic at room temperature and comprises alternating layers of Ru and at least one other element E (preferably Al; or Ga or Al alloyed with Ga, Ge, Sn or combinations thereof), and the third layer is also a magnetic Heusler compound. The composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55. An MRAM element may be constructed by forming, in turn, a substrate, the multi-layered structure, a tunnel barrier, and an additional magnetic layer (whose magnetic moment is switchable).
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2.发明授权公开(公告)号：US11557721B2
公开(公告)日：2023-01-17
申请号：US17174680
申请日：2021-02-12
Inventor： Panagiotis Charilaos Filippou , Chirag Garg , Yari Ferrante , Stuart S. P. Parkin , Jaewoo Jeong , Mahesh G. Samant
Abstract: A device including a multi-layered structure that includes: a first layer that includes a first magnetic Heusler compound; a second layer that is non-magnetic at room temperature and includes both Ru and at least one other element E, wherein the composition of the second layer is represented by Ru1−xEx, with x being in the range from 0.45 to 0.55; and a third layer including a second magnetic Heusler compound. The multi-layered structure may overlay a substrate. The device may include a tunnel barrier overlying the multi-layered structure.
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公开(公告)号：US10937953B2
公开(公告)日：2021-03-02
申请号：US16260024
申请日：2019-01-28
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S. P. Parkin , Yari Ferrante
Abstract: A device is disclosed. The device includes a tetragonal Heusler compound of the form Mn3-xCoxGe, wherein 0
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公开(公告)号：US09761793B1
公开(公告)日：2017-09-12
申请号：US15157717
申请日：2016-05-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woojin Kim , Keewon Kim , Jaewoo Jeong , Stuart S. P. Parkin , Mahesh Govind Samant
CPC classification number: H01L43/08 , G11C11/161 , H01L27/222 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.
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Patent Agency Ranking
公开(公告)号：US11005029B2
公开(公告)日：2021-05-11
申请号：US16146728
申请日：2018-09-28
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S. P. Parkin , Yari Ferrante
Abstract: A device is disclosed. The device includes a first magnetic layer and a tunnel barrier. The first magnetic layer has a volume uniaxial magnetic crystalline anisotropy. The magnetic moment of the first layer is substantially perpendicular to the first layer. The tunnel barrier is in proximity to the first magnetic layer. The orientation of the magnetic moment of the first magnetic layer is reversed by spin transfer torque induced by current passing between and through the first magnetic layer and the tunnel barrier.
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公开(公告)号：US10651234B2
公开(公告)日：2020-05-12
申请号：US16119785
申请日：2018-08-31
Inventor： Jaewoo Jeong , Mahesh G. Samant , Stuart S. P. Parkin , Yari Ferrante
IPC: H01L43/08 , H01L43/10 , H01L43/02 , H01L43/12 , H01L43/04 , H01L27/22 , H01L21/02 , H01L21/8239 , G11C11/16
Abstract: A device and method for providing the device are described. The device includes a substrate, a MnxN layer overlying the substrate, a multi-layered structure that is non-magnetic at room temperature and a first magnetic layer. The MnxN layer has 2≤x≤4.75. The multi-layered structure comprises alternating layers of Co and E, wherein E comprises at least one other element that includes Al. The composition of the multi-layered structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The first magnetic layer includes a Heusler compound. The first magnetic layer is in contact with the multi-layered structure and the first magnetic layer forms part of a magnetic tunnel junction.
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公开(公告)号：US10396123B2
公开(公告)日：2019-08-27
申请号：US15660681
申请日：2017-07-26
Inventor： Jaewoo Jeong , Stuart S. P. Parkin , Mahesh G. Samant
IPC: G11C11/00 , H01L27/22 , H01F10/16 , H01F10/32 , H01L43/10 , H01L43/12 , H01L43/02 , G11C11/16 , C22C21/00 , C22C22/00 , B32B15/04
Abstract: Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (that is preferably Al; or Al alloyed with Ga, Ge, Sn or combinations thereof). The composition of this structure is represented by Co1-xEx, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing an optional pinning layer between the first magnetic layer and the tunnel barrier.
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公开(公告)号：US09831422B2
公开(公告)日：2017-11-28
申请号：US14919717
申请日：2015-10-21
Inventor： Woojin Kim , Joonmyoung Lee , Yong Sung Park , Stuart S. P. Parkin
Abstract: A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.
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公开(公告)号：US10170696B1
公开(公告)日：2019-01-01
申请号：US15795096
申请日：2017-10-26
Inventor： Jaewoo Jeong , Stuart S. P. Parkin , Mahesh G. Samant
Abstract: Materials are disclosed that are used as seed layers in the formation of MRAM elements. In particular, a MnN layer oriented in the (001) direction is grown over a substrate. A magnetic layer overlying and in contact with the MnN layer forms part of a magnetic tunnel junction, in which the magnetic layer includes a Heusler compound that includes Mn. The magnetic tunnel junction includes the magnetic layer, a tunnel barrier overlying the magnetic layer, and a first (magnetic) electrode overlying the tunnel barrier. A second electrode is in contact with the MnN layer.
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