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    Memory device that performs internal copy operation
    1.
    发明授权
    Memory device that performs internal copy operation 有权

    公开(公告)号：US10983792B2

    公开(公告)日：2021-04-20

    申请号：US16189642

    申请日：2018-11-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-soo Sohn ,  Sei-jin Kim ,  Kwang-il Park ,  Tae-young Kim ,  Chul-woo Park

    IPC: G06F12/00 ,  G06F9/30 ,  G06F15/78

    Abstract: A memory device performing an internal copy operation is provided. The memory device may receive a source address, a destination address, and page size information together with an internal copy command, compares the source address with the destination address, and performs an internal copy operation. The internal copy operation may be an internal block copy operation, an inter-bank copy operation, or an internal bank copy operation. The internal copy operation may be performed with respect to one-page data, half-page data, or quarter-page data, based on the page size information. The memory device may output as a flag signal a copy-done signal indicating that the internal copy operation has been completed.

    Semiconductor device with a fin-shaped active region and a gate electrode
    3.
    发明授权
    Semiconductor device with a fin-shaped active region and a gate electrode 有权

    公开(公告)号：US11038062B2

    公开(公告)日：2021-06-15

    申请号：US16416725

    申请日：2019-05-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-hoon Lee ,  Gi-gwan Park ,  Tae-young Kim

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/15 ,  H01L29/267 ,  H01L29/20 ,  H01L29/22 ,  H01L29/16 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

    Semiconductor device having a fin-shaped active region and a gate electrode
    7.
    发明授权
    Semiconductor device having a fin-shaped active region and a gate electrode 有权

    公开(公告)号：US10361309B2

    公开(公告)日：2019-07-23

    申请号：US15404697

    申请日：2017-01-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jae-hoon Lee ,  Gi-gwan Park ,  Tae-young Kim

    IPC: H01L29/78 ,  H01L29/08 ,  H01L29/15 ,  H01L29/267 ,  H01L29/20 ,  H01L29/22 ,  H01L29/16 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate including a fin-shaped active region that protrudes from the substrate, a gate insulating film covering a top surface and both side walls of the fin-shaped active region, a gate electrode on the top surface and the both side walls of the fin-shaped active region and covering the gate insulating film, one pair of insulating spacers on both side walls of the gate electrode, one pair of source/drain region on the fin-shaped active region and located on both sides of the gate electrode, and a lower buffer layer between the fin-shaped active region the source/drain region. The source/drain regions include a compound semiconductor material including atoms from different groups. The lower buffer layer includes a compound semiconductor material that is amorphous and includes atoms from different groups.

    Metal-air battery having folded structure and method of manufacturing the same
    10.
    发明授权
    Metal-air battery having folded structure and method of manufacturing the same 有权
    具有折叠结构的金属空气电池及其制造方法

    公开(公告)号：US09509027B2

    公开(公告)日：2016-11-29

    申请号：US14310572

    申请日：2014-06-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Min-sik Park ,  Tae-young Kim ,  Dong-joon Lee ,  Sang-bok Ma ,  Dong-min Im ,  Victor Roev

    IPC: H01M8/22 ,  H01M12/06 ,  H01M6/18 ,  H01M2/18 ,  H01M12/08 ,  H01M4/02 ,  H01M10/04

    CPC classification number: H01M12/08 ,  H01M2/162 ,  H01M2/1666 ,  H01M2/18 ,  H01M6/187 ,  H01M10/045 ,  H01M10/0454 ,  H01M12/02 ,  H01M12/06 ,  H01M2004/025 ,  Y02E60/128 ,  Y10T29/49115

    Abstract: A metal-air battery including: a negative electrode metal layer; a negative electrode electrolyte layer disposed on the negative electrode metal layer; a positive electrode layer disposed on the negative electrode electrolyte layer, the positive electrode layer comprising a positive electrode material which is capable of using oxygen as an active material; and a gas diffusion layer disposed on the positive electrode layer, wherein the negative electrode electrolyte layer is between the negative electrode metal layer and the positive electrode layer; wherein the negative electrode metal layer, the negative electrode electrolyte layer, and the positive electrode layer are disposed on the gas diffusion layer so that the positive electrode layer contacts a lower surface and an opposite upper surface of the gas diffusion layer, and wherein one side surface of the gas diffusion layer is exposed to an outside.

    Abstract translation: 一种金属空气电池，包括：负极金属层; 设置在所述负极金属层上的负极电解质层; 设置在所述负极电解质层上的正极层，所述正极层包含能够使用氧作为活性物质的正极材料; 以及设置在所述正极层上的气体扩散层，其中所述负极电解质层位于所述负极金属层和所述正极层之间; 其特征在于，所述负极电极用金属层，所述负极电解质层和所述正极层配置在所述气体扩散层上，使得所述正极层与所述气体扩散层的下表面和相对的上表面接触， 气体扩散层的表面暴露于外部。

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