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公开(公告)号：US09036895B2
公开(公告)日：2015-05-19
申请号：US13785307
申请日：2013-03-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Young-hoon Sohn , Yu-sin Yang , Sang-kil Lee
CPC classification number: G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/30148
Abstract: A method of inspecting a wafer includes performing a fabricating process on a wafer, irradiating broadband light on the wafer, such that the light is reflected from the wafer, generating a spectral cube by using the light reflected from the wafer, extracting a spectrum of a desired wafer inspection region from the spectral cube, and inspecting the desired wafer inspection region by analyzing the extracted spectrum.
Abstract translation: 一种检查晶片的方法包括在晶片上执行制造工艺，在晶片上照射宽带光，使得光从晶片反射，通过使用从晶片反射的光产生光谱立方体， 来自光谱立方体的期望晶片检查区域，并且通过分析所提取的光谱来检查期望的晶片检查区域。
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公开(公告)号：US10989520B2
公开(公告)日：2021-04-27
申请号：US16715258
申请日：2019-12-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Duck-mahn Oh , Jong-an Kim , Si-hyeon Choi , Young-hoon Sohn , Yu-sin Yang , Chi-hoon Lee
IPC: G01B11/06
Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.
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Patent Agency Ranking
公开(公告)号：US20160153915A1
公开(公告)日：2016-06-02
申请号：US14955635
申请日：2015-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kang-woong Ko , Sung-yoon Ryu , Young-hoon Sohn , Gil-woo Song , Tae-heung Ahn , Hyoung-jo Jeon , Sang-kyeong Han , Masahiro Horie , Woo-seok Ko , Yu-sin Yang , Sang-kil Lee , Byeong-hwan Jeon
CPC classification number: G01N21/8806 , G01J4/00 , G01J2004/001 , G01N21/21 , G01N21/211 , G01N21/9501 , G01N21/956 , G01N2021/213 , G01N2021/8848
Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.
Abstract translation: 表面检查方法包括：在目标物体上照射第一偏振态的入射光束，入射光束包括平行光并具有横截面积：测量从目标反射的反射光束的第二偏振状态 目的; 并且基于第一极化状态和第二极化状态之间的变化，对照射入射光的目标物体的整个区域进行检查。
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公开(公告)号：US11181831B2
公开(公告)日：2021-11-23
申请号：US16558860
申请日：2019-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kyoung-hwan Lee , Young-ho Kwon , Souk Kim , Young-hoon Sohn , Yu-sin Yang
IPC: G03F7/20
Abstract: A method of manufacturing a semiconductor device includes forming a plurality of overlay molds on a semiconductor structure by developing a photoresist material layer of the semiconductor structure, the semiconductor structure including a first layer having a plurality of overlay marks, the plurality of overlay molds at least partially overlapping at least some of the plurality of overlay marks; and measuring one or more overlays by radiating a light having a wavelength band onto the semiconductor structure, each of the one or more overlays indicating an amount of consistency of the first layer and a second layer of the semiconductor structure, the wavelength band being set based on the plurality of overlay marks and the plurality of overlay molds, the second layer being between the first layer and the photoresist material layer.
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公开(公告)号：US20200208964A1
公开(公告)日：2020-07-02
申请号：US16715258
申请日：2019-12-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Duck-mahn OH , Jong-an Kim , Si-hyeon Choi , Young-hoon Sohn , Yu-sin Yang , Chi-hoon Lee
IPC: G01B11/06
Abstract: A method for nondestructive measurement of an underlying layer thickness includes irradiating, with a pump laser pulse, a sample to induce generation of an acoustic wave in the sample such that the acoustic wave propagates through the sample over time, where the sample includes a substrate, an underlying layer on the substrate, and an overlying layer on the underlying layer and the underlying layer is isolated from an exterior of the sample by at least the overlying layer, irradiating the sample with a probe laser pulse after irradiating the sample with the pump laser pulse, determining a reflectance variation of the sample over time, based on monitoring a variation of a reflection of the probe laser pulse from the sample over time, to generate a first graph showing a variation of reflectance of the sample over time, and determining a thickness of the underlying layer based on the first graph.
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6.发明申请公开(公告)号：US20190130552A1
公开(公告)日：2019-05-02
申请号：US15984774
申请日：2018-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Young-hoon Sohn , Sung-yoon Ryu , Yu-sin Yang
Abstract: A method of inspecting a defect including dividing a semiconductor substrate including the plurality of dies into a plurality of inspection regions, each of the plurality of inspection regions having at least one die, the semiconductor substrate including a pattern provided thereon, obtaining an optical image from each of the plurality of inspection regions, obtaining differential images between a reference region, and comparison regions, the reference region being one of the plurality of inspection regions, the comparison regions being regions other than the reference region from among the plurality of inspection regions, determining an abnormal pixel by performing a signal analysis with respect to respective signal intensities of same-location pixels in the differential images, and designating one or more possible weak patterns by comparing the abnormal pixel with a design pattern may be provided.
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公开(公告)号：US10001444B2
公开(公告)日：2018-06-19
申请号：US14955635
申请日：2015-12-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kang-woong Ko , Sung-yoon Ryu , Young-hoon Sohn , Gil-woo Song , Tae-heung Ahn , Hyoung-jo Jeon , Sang-kyeong Han , Masahiro Horie , Woo-seok Ko , Yu-sin Yang , Sang-kil Lee , Byeong-hwan Jeon
IPC: G01N21/88 , G01J4/00 , G01N21/21 , G01N21/956 , G01N21/95
CPC classification number: G01N21/8806 , G01J4/00 , G01J2004/001 , G01N21/21 , G01N21/211 , G01N21/9501 , G01N21/956 , G01N2021/213 , G01N2021/8848
Abstract: A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.
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