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    Method of inspecting surface and method of manufacturing semiconductor device
    4.
    发明授权
    Method of inspecting surface and method of manufacturing semiconductor device 有权

    公开(公告)号：US10249544B2

    公开(公告)日：2019-04-02

    申请号：US15654899

    申请日：2017-07-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-yoon Ryu ,  Chung-sam Jun ,  Yu-sin Yang ,  Yun-jung Jee ,  Gil-woo Song

    IPC: H01L21/00 ,  H01L21/66 ,  G06K9/00 ,  G06K9/46 ,  H01L21/77 ,  G06K9/20

    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

    Thickness prediction network learning method, semiconductor device manufacturing method, and semiconductor material deposition equipment
    5.
    发明授权
    Thickness prediction network learning method, semiconductor device manufacturing method, and semiconductor material deposition equipment 有权

    公开(公告)号：US11494642B2

    公开(公告)日：2022-11-08

    申请号：US16678755

    申请日：2019-11-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Su-il Cho ,  Sung-yoon Ryu ,  Yu-sin Yang ,  Chi-hoon Lee ,  Hyun-su Kwak ,  Jung-won Kim

    IPC: G06N3/08 ,  C23C16/52 ,  H01L27/115 ,  H01L21/66

    Abstract: A thickness prediction network learning method includes measuring spectrums of optical characteristics of a plurality of semiconductor structures each including a substrate and first and second semiconductor material layers alternately stacked thereon to generate sets of spectrum measurement data, measuring thicknesses of the first and second semiconductor material layers to generate sets of thickness data, training a simulation network using the sets of spectrum measurement data and the sets of thickness data, generating sets of spectrum simulation data of spectrums of the optical characteristics of a plurality of virtual semiconductor structures based on thicknesses of first and second virtual semiconductor material layers using the simulation network, each of the first and second virtual semiconductor layers including the same material as the first and second semiconductor material layers, respectively; and training a thickness prediction network by using the sets of spectrum measurement data and the sets of spectrum simulation data.

    Method of inspecting surface and method of manufacturing semiconductor device
    6.
    发明授权
    Method of inspecting surface and method of manufacturing semiconductor device 有权

    公开(公告)号：US11043433B2

    公开(公告)日：2021-06-22

    申请号：US16803459

    申请日：2020-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-yoon Ryu ,  Chung-sam Jun ,  Yu-sin Yang ,  Yun-jung Jee ,  Gil-woo Song

    IPC: G06K9/00 ,  H01L21/66 ,  G06K9/20 ,  G06K9/46 ,  H01L21/77

    Abstract: Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

    METHODS OF INSPECTING DEFECT AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
    7.
    发明申请
    METHODS OF INSPECTING DEFECT AND METHODS OF FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME 审中-公开

    公开(公告)号：US20190130552A1

    公开(公告)日：2019-05-02

    申请号：US15984774

    申请日：2018-05-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Young-hoon Sohn ,  Sung-yoon Ryu ,  Yu-sin Yang

    IPC: G06T7/00 ,  G01N21/95 ,  H01L21/66 ,  H01L21/027 ,  G03F1/38 ,  G03F1/36

    Abstract: A method of inspecting a defect including dividing a semiconductor substrate including the plurality of dies into a plurality of inspection regions, each of the plurality of inspection regions having at least one die, the semiconductor substrate including a pattern provided thereon, obtaining an optical image from each of the plurality of inspection regions, obtaining differential images between a reference region, and comparison regions, the reference region being one of the plurality of inspection regions, the comparison regions being regions other than the reference region from among the plurality of inspection regions, determining an abnormal pixel by performing a signal analysis with respect to respective signal intensities of same-location pixels in the differential images, and designating one or more possible weak patterns by comparing the abnormal pixel with a design pattern may be provided.

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