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公开(公告)号:US11893959B2
公开(公告)日:2024-02-06
申请号:US17710003
申请日:2022-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Yeonsoo Kim , Youngjae Kim , Minho Lee , Jaekwang Lee
CPC classification number: G09G5/10 , G01J5/10 , G06F3/011 , G01J5/022 , G09G2360/145
Abstract: An electronic device may include: a display having at least one hole disposed in at least a part thereof such that light from the outside can be transmitted therethrough; a light-emitting element disposed under the display and configured to output a first infrared ray to the outside; a first light-receiving element disposed under the display at a position corresponding to the at least one hole, and configured to receive a second infrared ray transmitted from the outside; a second light-receiving element disposed under the display at a position where light from the outside is shielded; and at least one processor configured to, based on that a first sensing value according to the second infrared ray, output from the first light-receiving element, satisfies a first specified condition, while the first infrared ray is output: based on that a second sensing value output from the second light-receiving element does not satisfy a second specified condition, identify that a proximate object exists, and based on that the second sensing value satisfies the second specified condition, identify that the proximate object does not exist.
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公开(公告)号:US20170301569A1
公开(公告)日:2017-10-19
申请号:US15486861
申请日:2017-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chanmin Lee , Youngjae Kim
IPC: H01L21/67 , H01L27/108 , H01L21/768 , H01L21/762 , H01L21/683
CPC classification number: H01L27/10888 , H01L21/6831 , H01L21/76224 , H01L21/76883 , H01L27/10814 , H01L27/10885 , H01L27/10891
Abstract: A method of fabricating a semiconductor device includes forming a material layer and a mask pattern on a substrate, mounting the substrate onto an electrostatic chuck, loading the substrate, including the material layer and the mask pattern, mounted on the electrostatic chuck, into an etching chamber, and forming a material pattern by dry etching the material layer using the mask pattern as an etching mask. The dry etching of the material layer includes adjusting a pressure of the etching chamber to adjust a lateral over-etch of the material pattern in a first direction, wherein the first direction is parallel to a surface of the substrate facing the material pattern, and adjusting a temperature of the electrostatic chuck to adjust an etching of the material pattern in a second direction, wherein the second direction crosses the first direction.
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公开(公告)号:US12124216B2
公开(公告)日:2024-10-22
申请号:US17371415
申请日:2021-07-09
Applicant: SAMSUNG ELECTRONICS CO., LTD. , Korea University Research and Business Foundation, Sejong Campus
Inventor: Yunhee Kim , Hwi Kim , Youngjae Kim , Hoon Song , Hongseok Lee
CPC classification number: G03H1/2286 , G02B1/005 , G02B27/09 , G02B27/0944 , G03H1/2205 , G03H2001/221
Abstract: A beam expanding film includes a first material layer and a photonic crystal layer that expands a width of incident light and emits light having an expanded width. The photonic crystal layer includes a first material layer and a plurality of second material layers buried in the first material layer. A holographic display apparatus includes a backlight unit configured to provide coherent collimated light; a beam expanding film described above and facing the backlight unit; a flat panel arranged between the backlight unit and the beam expanding film to provide a hologram; and a lens configured to focus a holographic image on a space.
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公开(公告)号:US12111361B2
公开(公告)日:2024-10-08
申请号:US17874794
申请日:2022-07-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Myeongjae Lee , Jinho Kim , Ju Wan Lim , Youngjae Kim , Young Hun Sung , Tae Won Song , Terrance Christopher Huang
IPC: G01R31/367 , G01R31/3835 , G01R31/52 , H02J7/00
CPC classification number: G01R31/367 , G01R31/3835 , G01R31/52 , H02J7/0048 , H02J7/007182 , H02J7/007192
Abstract: A method and apparatus with battery short circuit detection are included. In one general aspect, a processor-implemented method includes, based on battery data measured by a battery and a battery model of the battery, determining a detection parameter value used for detecting a short circuit of the battery and a variation factor value correlated with the detection parameter, using the variation factor to extract a reference value corresponding to the detection parameter value from a reference data set, and determining whether a short circuit of the battery has occurred based on a result of comparing the detection parameter value with the reference value.
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公开(公告)号:US12015024B2
公开(公告)日:2024-06-18
申请号:US18060244
申请日:2022-11-30
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngjae Kim
CPC classification number: H01L27/0222 , G05F3/205 , G05F3/26 , H01L27/0928 , H02M3/073 , H02M3/078 , H10B12/50
Abstract: A body bias voltage generating circuit includes a current mirror circuit configured to generate and input a target current to a target semiconductor element, the target semiconductor element configured to be set to a turned-on state; and a charge pump circuit including an oscillator configured to output a clock signal based on a result of comparing an output voltage of the target semiconductor element with a reference voltage, and at least one charge pump outputting a body bias voltage to each of a plurality of semiconductor elements, wherein each of the plurality of semiconductor elements is the same as or is the same type as the target semiconductor element.
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公开(公告)号:US11424627B2
公开(公告)日:2022-08-23
申请号:US16879972
申请日:2020-05-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngjae Kim
IPC: H02J7/00
Abstract: An electronic apparatus may include: batteries; a charger configured to charge the batteries; a switch network electrically connected to the batteries; and a charging controller configured to control the switch network to change a connection relationship between the batteries and to control the charger to charge the batteries while the batteries are in the changed connection relationship.
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公开(公告)号:US12057718B2
公开(公告)日:2024-08-06
申请号:US17837572
申请日:2022-06-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngjae Kim
IPC: H02J7/00
CPC classification number: H02J7/0013 , H02J7/0047 , H02J7/007182
Abstract: An electronic apparatus may include: batteries; a charger configured to charge the batteries; a switch network electrically connected to the batteries; and a charging controller configured to control the switch network to change a connection relationship between the batteries and to control the charger to charge the batteries while the batteries are in the changed connection relationship.
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公开(公告)号:US11617491B2
公开(公告)日:2023-04-04
申请号:US16913516
申请日:2020-06-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Kitae Park , Youngjae Kim , Youngsu Ser , Changwook Lee
Abstract: A dishwasher with an improved door structure. The dishwasher includes a cabinet having a washing tub and a door installed at one side of the cabinet to open and close the washing tub, wherein the door includes a door member in which an electrical component is installed, a handle member installed on the door member to form a handle, and a water discharge channel allowing water to be discharged to outside of the door through the door member and the handle member.
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公开(公告)号:US11258276B2
公开(公告)日:2022-02-22
申请号:US16677888
申请日:2019-11-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Youngjae Kim
Abstract: Disclosed is a battery management system (BMS) power supply management apparatus and method. The BMS power supply management apparatus includes an optoelectronic element configured to generate a current in response to an optical signal, a conversion element configured to convert the current into a wake-up voltage, and a first switch configured to switch a wake-up signal for a BMS, in response to the wake-up voltage.
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公开(公告)号:US10236295B2
公开(公告)日:2019-03-19
申请号:US15486861
申请日:2017-04-13
Applicant: Samsung Electronics Co., Ltd.
Inventor: Chanmin Lee , Youngjae Kim
IPC: H01L27/108 , H01L21/762 , H01L21/768 , H01L21/683
Abstract: A method of fabricating a semiconductor device includes forming a material layer and a mask pattern on a substrate, mounting the substrate onto an electrostatic chuck, loading the substrate, including the material layer and the mask pattern, mounted on the electrostatic chuck, into an etching chamber, and forming a material pattern by dry etching the material layer using the mask pattern as an etching mask. The dry etching of the material layer includes adjusting a pressure of the etching chamber to adjust a lateral over-etch of the material pattern in a first direction, wherein the first direction is parallel to a surface of the substrate facing the material pattern, and adjusting a temperature of the electrostatic chuck to adjust an etching of the material pattern in a second direction, wherein the second direction crosses the first direction.
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