中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

9 records (took 0.008 seconds)

    Rectenna that converts infrared radiation to electrical energy
    1.
    发明授权
    Rectenna that converts infrared radiation to electrical energy 有权
    将红外辐射转换为电能的天线

    公开(公告)号：US09437629B1

    公开(公告)日：2016-09-06

    申请号：US14834514

    申请日：2015-08-25

    Applicant: Sandia Corporation

    Inventor： Paul Davids ,  David W. Peters

    IPC: H01L27/144 ,  H01L31/18 ,  H01L29/88 ,  H01L31/09

    CPC classification number: H01L27/144 ,  H01L29/88 ,  H01L31/09 ,  H01L31/102 ,  H01L31/18

    Abstract: Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

    Abstract translation: 本文描述了将红外（IR）辐射转换为DC能量的技术。 在一般实施例中，整流天线包括导电层。 在导电层上形成薄的绝缘体层，在薄绝缘体层上形成纳米天线。 薄的绝缘体层用作隧道二极管的隧道结。

    Frequency selective infrared sensors
    5.
    发明授权
    Frequency selective infrared sensors 有权
    频率选择红外传感器

    公开(公告)号：US08897609B1

    公开(公告)日：2014-11-25

    申请号：US13871676

    申请日：2013-04-26

    Applicant: Sandia Corporation

    Inventor： Paul Davids ,  David W. Peters

    IPC: G02B6/00 ,  G01J5/58

    CPC classification number: G01J5/58 ,  G01J1/0488 ,  G01J1/42 ,  G01J5/0853 ,  G01J5/0862 ,  H01L27/14652 ,  H01L31/1085

    Abstract: A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.

    Abstract translation: 具有预定频带的频率选择性红外（IR）光电探测器。 示例性频率选择性光电检测器包括：介电IR吸收体，其具有基本平行于第一表面的第一表面和第二表面; 电耦合到介电IR吸收体的第一表面的电极; 以及形成在介电IR吸收体的第二表面上的频率选择性表面等离子体（FSSP）结构。 FSSP结构被设计成选择性地发射入射在FSSP结构上的预定频带中的辐射，基本上与FSSP结构上的入射辐射的入射角无关。

    Infrared nanoantenna apparatus and method for the manufacture thereof
    6.
    发明授权
    Infrared nanoantenna apparatus and method for the manufacture thereof 有权
    红外线纳米天线装置及其制造方法

    公开(公告)号：US08750653B1

    公开(公告)日：2014-06-10

    申请号：US13871708

    申请日：2013-04-26

    Applicant: Sandia Corporation

    Inventor： David W. Peters ,  Paul Davids ,  Darin Leonhardt ,  Jin K. Kim ,  Joel R. Wendt ,  John F. Klem

    IPC: G02B6/00

    CPC classification number: G01J1/42 ,  G01J5/0837 ,  G01J5/28 ,  H01L27/14652 ,  H01L31/02327 ,  H01L31/09

    Abstract: An exemplary embodiment of the present invention is a photodetector comprising a semiconductor body, a periodically patterned metal nanoantenna disposed on a surface of the semiconductor body, and at least one electrode separate from the nanoantenna. The semiconductor body comprises an active layer in sufficient proximity to the nanoantenna for plasmonic coupling thereto. The nanoantenna is dimensioned to absorb electromagnetic radiation in at least some wavelengths not more than 12 μm that are effective for plasmonic coupling into the active layer. The electrode is part of an electrode arrangement for obtaining a photovoltage or photocurrent in operation under appropriate stimulation.

    Abstract translation: 本发明的示例性实施例是一种光电检测器，其包括半导体本体，设置在半导体主体的表面上的周期性图案化的金属纳米天线以及与纳米天线分开的至少一个电极。 半导体主体包括足够接近纳米天线的有源层，用于等离子体耦合。 纳米天线的尺寸被设计成吸收对于等离子体激元耦合到有源层中有效的至少一些不大于12μm的波长的电磁辐射。 电极是用于在适当刺激下操作中获得光电压或光电流的电极装置的一部分。

    RECTENNA THAT CONVERTS INFRARED RADIATION TO ELECTRICAL ENERGY
    7.
    发明申请
    RECTENNA THAT CONVERTS INFRARED RADIATION TO ELECTRICAL ENERGY 有权
    能够将红外辐射到电能的雷达

    公开(公告)号：US20160260755A1

    公开(公告)日：2016-09-08

    申请号：US14834514

    申请日：2015-08-25

    Applicant: Sandia Corporation

    Inventor： Paul Davids ,  David W. Peters

    IPC: H01L27/144 ,  H01L31/09 ,  H01L29/88 ,  H01L31/18

    CPC classification number: H01L27/144 ,  H01L29/88 ,  H01L31/09 ,  H01L31/102 ,  H01L31/18

    Abstract: Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

    Abstract translation: 本文描述了将红外（IR）辐射转换为DC能量的技术。 在一般实施例中，整流天线包括导电层。 在导电层上形成薄的绝缘体层，在薄绝缘体层上形成纳米天线。 薄的绝缘体层用作隧道二极管的隧道结。

    Highly directional thermal emitter
    8.
    发明授权
    Highly directional thermal emitter 有权
    高定向发热体

    公开(公告)号：US08987754B1

    公开(公告)日：2015-03-24

    申请号：US14028181

    申请日：2013-09-16

    Applicant: Sandia Corporation

    Inventor： Troy Ribaudo ,  Eric A. Shaner ,  Paul Davids ,  David W. Peters

    IPC: H01L27/15 ,  G01J1/00 ,  H01L49/00 ,  H01L31/101 ,  H01L27/16 ,  H01L33/00

    CPC classification number: H01L49/00 ,  G02B1/002 ,  G02B5/008 ,  H01L27/16 ,  H01L31/101 ,  H01L33/0004

    Abstract: A highly directional thermal emitter device comprises a two-dimensional periodic array of heavily doped semiconductor structures on a surface of a substrate. The array provides a highly directional thermal emission at a peak wavelength between 3 and 15 microns when the array is heated. For example, highly doped silicon (HDSi) with a plasma frequency in the mid-wave infrared was used to fabricate nearly perfect absorbing two-dimensional gratings structures that function as highly directional thermal radiators. The absorption and emission characteristics of the HDSi devices possessed a high degree of angular dependence for infrared absorption in the 10-12 micron range, while maintaining high reflectivity of solar radiation (˜64%) at large incidence angles.

    Abstract translation: 高度定向的发热器件包括在衬底的表面上的重掺杂半导体结构的二维周期性阵列。 当阵列被加热时，该阵列在3和15微米之间的峰值波长处提供高度定向的热发射。 例如，在中波红外线中具有等离子体频率的高掺杂硅（HDSi）用于制造几乎完美的吸收二维光栅结构，其作为高度定向的散热器。 HDSi器件的吸收和发射特性对10-12微米范围内的红外吸收具有高度的角度依赖性，同时在大入射角度下保持太阳辐射的高反射率（〜64％）。

    Method and apparatus of wide-angle optical beamsteering from a nanoantenna phased array
    9.
    发明授权
    Method and apparatus of wide-angle optical beamsteering from a nanoantenna phased array 有权
    广角相位阵列广角光束转向的方法和装置

    公开(公告)号：US09104086B1

    公开(公告)日：2015-08-11

    申请号：US14188269

    申请日：2014-02-24

    Applicant: Sandia Corporation

    Inventor： Paul Davids ,  Christopher DeRose ,  Peter Thomas Rakich

    IPC: G02F1/295 ,  G02F1/01 ,  G02B5/18 ,  B82Y20/00 ,  G02F1/29 ,  G02B6/122

    CPC classification number: G02F1/2955 ,  B82Y20/00 ,  G02B5/1809 ,  G02B6/1226 ,  G02B27/0087 ,  G02F1/0147 ,  G02F2001/291 ,  Y10S977/932

    Abstract: An optical beam-steering apparatus is provided. The apparatus includes one or more optical waveguides and at least one row of metallic nanoantenna elements overlying and electromagnetically coupled to a respective waveguide. In each such row, individual nanoantenna elements are spaced apart along an optical propagation axis of the waveguide so that there is an optical propagation phase delay between successive pairs of nanoantenna elements along the row. The apparatus also includes a respective single electric heating element in thermal contact with each of the waveguides. Each heating element is arranged to heat, substantially uniformly, at least that portion of its waveguide that directly underlies the corresponding row of nanoantenna elements.

    Abstract translation: 提供了一种光束转向装置。 该装置包括一个或多个光波导和至少一排覆盖并电磁耦合到相应波导的金属纳米天线元件。 在每个这样的行中，单个纳米天线元件沿着波导的光学传播轴线间隔开，使得沿着该行的连续的纳米天线元件对之间存在光学传播相位延迟。 该装置还包括与每个波导热接触的相应的单个电加热元件。 每个加热元件布置成基本上均匀地加热其直接位于相应的纳米天线元件行下方的波导的至少该部分。

Patent Agency Ranking