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1.发明申请ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM 有权具有高透明度的超滤玻璃的氮化钠块状晶体及其形成方法公开(公告)号：US20110008621A1
公开(公告)日：2011-01-13
申请号：US12827507
申请日：2010-06-30
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。
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2.发明申请ALUMINUM NITRIDE BULK CRYSTALS HAVING HIGH TRANSPARENCY TO ULTRAVIOLET LIGHT AND METHODS OF FORMING THEM 有权具有高透明度的超滤玻璃的氮化钠块状晶体及其形成方法公开(公告)号：US20150218729A1
公开(公告)日：2015-08-06
申请号：US14687993
申请日：2015-04-16
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。
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3.发明授权Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them 有权对紫外线具有高透明度的氮化铝本体晶体及其形成方法公开(公告)号：US09034103B2
公开(公告)日：2015-05-19
申请号：US12827507
申请日：2010-06-30
申请人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
发明人： Sandra B. Schujman , Shailaja P. Rao , Robert T. Bondokov , Kenneth E. Morgan , Glen A. Slack , Leo J. Schowalter
CPC分类号： C30B23/066 , C30B23/00 , C30B23/002 , C30B23/02 , C30B29/403 , C30B33/02 , C30B35/00 , H01L21/02389 , Y10T428/2982
摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.
摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。
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公开(公告)号：US20150275393A1
公开(公告)日：2015-10-01
申请号：US14684754
申请日：2015-04-13
申请人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
发明人： Robert T. Bondokov , Leo J. Schowalter , Kenneth Morgan , Glen A. Slack , Shailaja P. Rao , Shawn Robert Gibb
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有面状平面缺陷密度的纳米氮化铝的单晶（AlN）为100cm-2。 用于生长单晶氮化铝的方法包括熔融铝箔以均匀地湿一层铝基，该基底形成AlN种子保持器的一部分，用于AlN种子用于AlN生长。 保持器可以基本上由基本上不可渗透的背板组成。
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公开(公告)号：US20150013592A1
公开(公告)日：2015-01-15
申请号：US14458825
申请日：2014-08-13
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density ≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
摘要翻译： 具有面状平面缺陷密度（NlE）和100cm-2的氮化铝（AlN）的单体单晶。 用于生长单晶氮化铝的方法包括熔融铝箔以均匀地润湿基底，该铝层用于AlN种子用于AlN生长的AlN种子保持器的一部分。 保持器可以基本上由基本上不可渗透的背板组成。
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公开(公告)号：US07638346B2
公开(公告)日：2009-12-29
申请号：US11503660
申请日：2006-08-14
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
IPC分类号： H01L21/00
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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公开(公告)号：US10697085B2
公开(公告)日：2020-06-30
申请号：US16160158
申请日：2018-10-15
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm=2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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公开(公告)号：US20170191184A1
公开(公告)日：2017-07-06
申请号：US15463536
申请日：2017-03-20
CPC分类号： C30B23/025 , C30B23/00 , C30B29/403 , H01L21/02389 , Y10T428/2982
摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.
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9.发明授权公开(公告)号：US08545629B2
公开(公告)日：2013-10-01
申请号：US11431090
申请日：2006-05-09
申请人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
发明人： Leo J. Schowalter , Glen A. Slack , J. Carlos Rojo , Robert T. Bondokov , Kenneth E. Morgan , Joseph A. Smart
IPC分类号： H01L49/00
CPC分类号： C30B25/16 , C30B11/003 , C30B23/00 , C30B23/025 , C30B25/10 , C30B25/14 , C30B25/20 , C30B29/403 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/02634 , H01L29/04 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/32 , H01L29/66462 , H01L29/7787 , H01L33/0075 , H01L33/025 , H01L33/12 , H01L33/325 , H01L2924/0002 , Y10T428/21 , H01L2924/00
摘要： Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm−2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals.
摘要翻译： 具有直径大于约25mm的AlN的大体积单晶和约10,000cm-2或更小的位错密度以及具有由这些本体晶体制造的任何所需晶体取向表面的高质量AlN衬底。
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公开(公告)号：US20100135349A1
公开(公告)日：2010-06-03
申请号：US12617150
申请日：2009-11-12
申请人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
发明人： Leo J. Schowalter , Joseph A. Smart , Shiwen Liu , Kenneth E. Morgan , Robert T. Bondokov , Timothy J. Bettles , Glen A. Slack
CPC分类号： H01L33/0075 , H01L21/02389 , H01L21/02458 , H01L21/0251 , H01L21/0254 , H01L2924/0002 , H01S5/32341 , H01S2301/173 , H01S2304/04 , H01L2924/00
摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.
摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。
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