Organic light-emitting display device and method of manufacturing the organic light emitting display device
    4.
    发明授权
    Organic light-emitting display device and method of manufacturing the organic light emitting display device 有权
    有机发光显示装置及有机发光显示装置的制造方法

    公开(公告)号:US09035330B2

    公开(公告)日:2015-05-19

    申请号:US13088261

    申请日:2011-04-15

    摘要: An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes.

    摘要翻译: 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括:基板,基板上的多个像素,多个第一电极,每个设置在多个像素中的每一个中;像素限定层,包括限定子层的第一像素, 每个两个相邻的第一电极,以及限定子层的第二像素,覆盖限定每个两个相邻的第一电极的子层和表面边缘部分的第一像素,设置在每个第一电极上并包括发射层的中间层,以及 配置成面对第一电极的第二电极。

    Touch screen display apparatus
    5.
    发明授权
    Touch screen display apparatus 有权
    触摸屏显示装置

    公开(公告)号:US08952900B2

    公开(公告)日:2015-02-10

    申请号:US12852702

    申请日:2010-08-09

    IPC分类号: G06F3/041

    CPC分类号: G06F3/0412 Y10T29/49124

    摘要: A touch screen display apparatus for easily sensing the touch of a user. The touch screen display apparatus includes: a substrate; a display unit formed on the substrate; and a touch panel disposed to face the display unit, where the touch panel comprises a sealing substrate, a first electrode formed on the sealing substrate, a second electrode spaced apart from the first electrode, and a light receiving unit comprising an organic material interposed between the first electrode and the second electrode.

    摘要翻译: 一种触摸屏显示装置,用于容易地感测用户的触摸。 触摸屏显示装置包括:基板; 形成在所述基板上的显示单元; 以及设置为面对显示单元的触摸面板,其中触摸面板包括密封基板,形成在密封基板上的第一电极,与第一电极间隔开的第二电极,以及光接收单元,其包括介于 第一电极和第二电极。

    Apparatus and method for performing scroll function in portable terminal
    6.
    发明授权
    Apparatus and method for performing scroll function in portable terminal 有权
    便携式终端中执行滚动功能的装置和方法

    公开(公告)号:US08860670B2

    公开(公告)日:2014-10-14

    申请号:US12650159

    申请日:2009-12-30

    CPC分类号: G06F3/0488 G06F3/0485

    摘要: An apparatus is provided for performing a scroll function in a portable terminal, in which a touch screen displays a list divided into a plurality of sections, a memory stores a scroll function established for each of the plurality of sections, and a controller locates a focus on a particular item by performing a scroll function established for a particular section, when the section among the plurality of sections is touched and dragged.

    摘要翻译: 提供一种用于在便携式终端中执行滚动功能的装置,其中触摸屏显示被划分为多个部分的列表,存储器存储为多个部分中的每一个建立的滚动功能,并且控制器定位焦点 通过执行为特定部分建立的滚动功能,当多个部分中的部分被触摸和拖动时,在特定项目上。

    All graphene flash memory device
    7.
    发明授权
    All graphene flash memory device 有权
    所有石墨烯闪存器件

    公开(公告)号:US08772853B2

    公开(公告)日:2014-07-08

    申请号:US13180601

    申请日:2011-07-12

    IPC分类号: H01L29/778

    摘要: A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers.

    摘要翻译: 公开了一种石墨烯闪存(GFM)装置。 通常,GFM器件包括多个存储器单元,其中每个存储器单元包括石墨烯通道,石墨烯存储层和石墨烯电极。 在一个实施例中,通过使用石墨烯通道,石墨烯存储层和石墨烯电极,能够使GFM器件的存储器单元比常规闪存器件的存储器单元小得多。 更具体地说,在一个实施例中,GFM器件具有小于25纳米,小于或等于20纳米,小于或等于15纳米,小于或等于10纳米,或小于或等于5纳米 纳米。

    Semiconductor device
    8.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08664707B2

    公开(公告)日:2014-03-04

    申请号:US13428706

    申请日:2012-03-23

    IPC分类号: H01L29/792

    摘要: Provided is a semiconductor device that can include a lower interconnection on a substrate and at least one upper interconnection disposed on the lower interconnection. At least one gate structure can be disposed between the upper interconnection and the lower interconnection, where the gate structure can include a plurality of gate lines that are vertically stacked so that each of the gate lines has a wiring portion that is substantially parallel to an upper surface of the substrate and a contact portion that extends from the wiring portion along a direction penetrating an upper surface of the substrate. At least one semiconductor pattern can connect the upper and lower interconnections.

    摘要翻译: 提供了一种半导体器件,其可以包括在衬底上的下互连和布置在下互连上的至少一个上互连。 至少一个栅极结构可以设置在上部互连和下部互连之间,其中栅极结构可以包括垂直堆叠的多条栅极线,使得每个栅极线具有基本上平行于上部的布线部分 所述基板的表面和从所述布线部沿着穿过所述基板的上表面的方向延伸的接触部。 至少一个半导体图案可以连接上部和下部互连。

    INTEGRATED CIRCUIT MEMORY DEVICES HAVING VERTICAL TRANSISTOR ARRAYS THEREIN AND METHODS OF FORMING SAME
    10.
    发明申请
    INTEGRATED CIRCUIT MEMORY DEVICES HAVING VERTICAL TRANSISTOR ARRAYS THEREIN AND METHODS OF FORMING SAME 有权
    具有垂直晶体管阵列的集成电路存储器件及其形成方法

    公开(公告)号:US20140015032A1

    公开(公告)日:2014-01-16

    申请号:US14024737

    申请日:2013-09-12

    IPC分类号: H01L29/792

    摘要: An integrated circuit device includes a transistor array having a vertical stack of independently controllable gate electrodes therein. A first semiconductor channel region is provided, which extends on a first sidewall of the vertical stack of independently controllable gate electrodes. A first electrically insulating layer is also provided, which extends between the first semiconductor channel region and the first sidewall of the vertical stack of independently controllable gate electrodes. Source and drain regions are provided, which are electrically coupled to first and second ends of the first semiconductor channel region, respectively.

    摘要翻译: 集成电路器件包括其中具有可独立控制的栅电极的垂直堆叠的晶体管阵列。 提供第一半导体沟道区,其在独立可控栅电极的垂直叠层的第一侧壁上延伸。 还提供了第一电绝缘层,其在第一半导体沟道区域和独立可控栅电极的垂直叠层的第一侧壁之间延伸。 源极和漏极区分别电耦合到第一半导体沟道区的第一和第二端。