摘要:
A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.
摘要:
An anti-reflective coating composition includes a solvent and about 20 to about 35 percent by weight of a polymer prepared by a condensation reaction of an acrylate polymer including a hydroxyl group with a derivative of muramic acid and a derivative of mandelic acid.
摘要:
An anti-reflective coating composition includes a solvent and about 20 to about 35 percent by weight of a polymer prepared by a condensation reaction of an acrylate polymer including a hydroxyl group with a derivative of muramic acid and a derivative of mandelic acid.
摘要:
A photoresist stripper composition is formed of a mixture of acetone, &ggr;-butyrolactone, and ester solvent. A photoresist stripping method includes spraying the photoresist stripper composition over a substrate while rotating the substrate at a relatively low speed, so as to strip photoresist from the substrate. The rotation of the substrate is stopped for a short period of time, and thereafter the photoresist stripper composition is again sprayed over the substrate while rotating the substrate at a relatively high speed. Then, the substrate is rinsed with pure water.
摘要:
In a photoresist composition and a method of forming a photoresist pattern using the photoresist composition, the photoresist composition includes a photosensitive polymer having a first repeating unit of p-hydroxystyrene and a second repeating unit of an acrylate at a molar ratio of from about 40:60 to about 60:40, a photosensitive material and an organic solvent. The photoresist composition having good reproducibility and stability may form a photoresist film having a substantially uniform thickness, and may form a fine pattern with accuracy.
摘要:
A resin solution usable for forming a protection layer, including an organic solvent and a resol resin. The resin solution may further include any combination of a cross-linking agene or agent(s), a photo active compound (PAC) or compounds(s), and/or development accelerator or accelerator(s) a method forming a cured resin layer, including applying a resin solution, including a resol resin, directly or indirectly on a substrate and hard baking the resin solution to form the cured resin layer. The resin solution may include a resol resin and/or a novolac resin.
摘要:
In a photosensitive polymer, a photoresist composition including the photosensitive polymer and a method of forming a photoresist pattern using the photoresist composition, the photosensitive polymer has a weight average molecular weight of from about 1,000 up to about 100,000 and a repeating unit represented by the following chemical formula (1). wherein R1 represents hydrogen or an alkyl group having 1 to 10 carbon atoms, R2 represents an acid-labile hydrocarbon group having 3 to 12 carbon atoms, and n represents an integer greater than or equal to 1. The photoresist composition having good reproducibility and stability may form a photoresist film having a substantially uniform thickness, and may form a fine pattern with accuracy.