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1.发明申请Worktable device, film formation apparatus, and film formation method for semiconductor process 审中-公开工作台装置，成膜装置和半导体工艺的成膜方法公开(公告)号：US20050257747A1
公开(公告)日：2005-11-24
申请号：US11192047
申请日：2005-07-29
IPC分类号： C23C16/44 , C23C16/458 , C23C16/46 , H01L21/00 , H01L21/285 , C23C16/00
CPC分类号： H01L21/67109 , C23C16/4581 , C23C16/46 , H01L21/28556
摘要： A worktable device is disposed inside a film formation process container for a semiconductor process. The worktable device includes a worktable including a top surface to place a target substrate thereon, and a side surface extending downward from the top surface, and a heater disposed in the worktable and configured to heat the substrate through the top surface. A CVD pre-coat layer covers the top surface and the side surface of the worktable. The pre-coat layer has a thickness not less than a thickness which substantially saturates the amount of radiant heat originating from heating of the heater and radiated from the top surface and the side surface of the worktable.
摘要翻译： 工作台装置设置在用于半导体工艺的成膜处理容器内部。 工作台装置包括工作台，其包括顶表面以将目标基板放置在其上，以及从顶表面向下延伸的侧表面，以及设置在工作台中并构造成通过顶表面加热基板的加热器。 CVD预涂层覆盖工作台的顶表面和侧表面。 预涂层的厚度不小于基本上饱和来自加热器的加热并从工作台的顶表面和侧表面辐射的辐射热量的厚度。
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公开(公告)号：US6069093A
公开(公告)日：2000-05-30
申请号：US098731
申请日：1998-06-18
申请人： Kunihiro Tada , Satoshi Wakabayashi
发明人： Kunihiro Tada , Satoshi Wakabayashi
IPC分类号： C23C16/42 , C23C16/30 , H01L21/28 , H01L21/285 , H01L21/768 , H01L23/522 , H01L21/31
CPC分类号： H01L21/76855 , H01L21/28518 , H01L21/28556 , H01L21/76843
摘要： In a process of forming a metal film, when metal wiring is formed on a diffusion layer (an electrode, etc.) of a circuit element formed on a silicon semiconductor wafer, a Ti film is deposited on a surface of a processed body by PECVD using TiCl.sub.4 gas and H.sub.2 gas as material gas. A Ti--Si--N film is formed on the diffusion layer surface by adding N.sub.2 gas to the material gas, and the Ti film is formed subsequently on the Ti--Si--N film. The Ti--Si--N film suppresses diffusion of silicon from the semiconductor wafer side.
摘要翻译： 在形成金属膜的过程中，当在形成在硅半导体晶片上的电路元件的扩散层（电极等）上形成金属布线时，通过PECVD在加工体的表面上沉积Ti膜 使用TiCl4气体和H2气体作为原料气体。 通过向材料气体中添加N2气体，在扩散层表面上形成Ti-Si-N膜，随后在Ti-Si-N膜上形成Ti膜。 Ti-Si-N膜抑制硅从半导体晶片侧的扩散。
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公开(公告)号：US08257790B2
公开(公告)日：2012-09-04
申请号：US12280044
申请日：2007-02-21
CPC分类号： C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。
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公开(公告)号：US20100227062A1
公开(公告)日：2010-09-09
申请号：US12280044
申请日：2007-02-21
IPC分类号： C23C16/22
CPC分类号： C23C16/14 , C23C8/36 , C23C16/4405 , C23C16/56
摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.
摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。
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5.发明申请Method for Forming Ti Film and Tin Film, Contact Structure, Computer Readable Storing Medium and Computer Program 失效形成Ti膜和锡膜的方法，接触结构，计算机可读存储介质和计算机程序公开(公告)号：US20070257372A1
公开(公告)日：2007-11-08
申请号：US11547977
申请日：2005-04-08
CPC分类号： H01L21/76846 , C23C16/0281 , C23C16/34 , H01J37/321 , H01L21/02063 , H01L21/28556 , H01L21/32051 , H01L21/76814 , H01L21/76856 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.
摘要翻译： 在作为底层的硅化镍膜的表面上进行清洁处理。 然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。 然后，将Ti膜氮化。 然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。
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公开(公告)号：US20050233093A1
公开(公告)日：2005-10-20
申请号：US11143718
申请日：2005-06-03
IPC分类号： C23C16/14 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/50 , H01L21/28 , H01L21/285 , H05H1/24 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.
摘要翻译： 在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。 第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。 第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。
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公开(公告)号：US20100240216A1
公开(公告)日：2010-09-23
申请号：US12789516
申请日：2010-05-28
IPC分类号： H01L21/3205
CPC分类号： C23C16/45523 , C23C16/4408 , C23C16/50 , H01L21/28562
摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.
摘要翻译： 在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。 第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。 第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。
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8.发明申请METHOD FOR FORMING TI FILM AND TIN FILM, CONTACT STRUCTURE, COMPUTER READABLE STORAGE MEDIUM AND COMPUTER PROGRAM 审中-公开形成TI薄膜和薄膜的方法，接触结构，计算机可读存储介质和计算机程序公开(公告)号：US20100216304A1
公开(公告)日：2010-08-26
申请号：US12773641
申请日：2010-05-04
IPC分类号： H01L21/768
CPC分类号： H01L21/76846 , C23C16/0281 , C23C16/34 , H01J37/321 , H01L21/02063 , H01L21/28556 , H01L21/32051 , H01L21/76814 , H01L21/76856 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.
摘要翻译： 在作为底层的硅化镍膜的表面上进行清洁处理。 然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。 然后，将Ti膜氮化。 然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。
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9.发明授权Method for forming Ti film and TiN film, contact structure, computer readable storing medium and computer program 失效形成Ti膜和TiN膜的方法，接触结构，计算机可读存储介质和计算机程序公开(公告)号：US07737005B2
公开(公告)日：2010-06-15
申请号：US11547977
申请日：2005-04-08
IPC分类号： H01L21/322
CPC分类号： H01L21/76846 , C23C16/0281 , C23C16/34 , H01J37/321 , H01L21/02063 , H01L21/28556 , H01L21/32051 , H01L21/76814 , H01L21/76856 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.
摘要翻译： 在作为底层的硅化镍膜的表面上进行清洁处理。 然后，通过使用Ti化合物气体的CVD，形成具有不小于2nm但小于10nm的膜厚度的Ti膜。 然后，将Ti膜氮化。 然后，通过使用Ti化合物气体和含有N和H的气体的CVD，在Ti膜上形成TiN膜。
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公开(公告)号：US20070131168A1
公开(公告)日：2007-06-14
申请号：US11588423
申请日：2006-10-27
申请人： Hisashi Gomi , Tetsuya Saito , Takashi Kakegawa , Takahisa Mase , Makoto Koizumi , Kunihiro Tada , Satoshi Wakabayashi , Kensaku Narushima , Fang Cheng
发明人： Hisashi Gomi , Tetsuya Saito , Takashi Kakegawa , Takahisa Mase , Makoto Koizumi , Kunihiro Tada , Satoshi Wakabayashi , Kensaku Narushima , Fang Cheng
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/3244 , H01J37/32449
摘要： The invention relates to a gas supplying unit to be arranged to hermetically fit in an opening formed at a ceiling part of a processing container for conducting a process to a substrate. The gas supplying unit includes a plurality of nickel members. A large number of gas-supplying holes is formed at a lower surface of the gas supplying unit, a process gas is adapted to be supplied from the large number of gas-supplying holes into the processing container, and the plurality of nickel members is fixed to each other via an intermediate member for preventing sticking made of a material different from nickel.
摘要翻译： 本发明涉及一种气体供应单元，其被设置成气密地装配在形成在处理容器的顶部的开口中，用于对基板进行处理。 气体供给单元包括多个镍构件。 在气体供给单元的下表面形成有大量的供气孔，处理气体适于从多个供气孔供给到处理容器中，并且多个镍构件被固定 通过用于防止由不同于镍的材料制成的粘着的中间构件。
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