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46 条记录 (耗时 0.018 秒)

    Process of forming metal films and multi layer structure
    1.
    发明授权
    Process of forming metal films and multi layer structure 失效
    形成金属膜和多层结构的工艺

    公开(公告)号：US6069093A

    公开(公告)日：2000-05-30

    申请号：US098731

    申请日：1998-06-18

    申请人： Kunihiro Tada ,  Satoshi Wakabayashi

    发明人： Kunihiro Tada ,  Satoshi Wakabayashi

    IPC分类号： C23C16/42 ,  C23C16/30 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L21/31

    CPC分类号： H01L21/76855 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/76843

    摘要： In a process of forming a metal film, when metal wiring is formed on a diffusion layer (an electrode, etc.) of a circuit element formed on a silicon semiconductor wafer, a Ti film is deposited on a surface of a processed body by PECVD using TiCl.sub.4 gas and H.sub.2 gas as material gas. A Ti--Si--N film is formed on the diffusion layer surface by adding N.sub.2 gas to the material gas, and the Ti film is formed subsequently on the Ti--Si--N film. The Ti--Si--N film suppresses diffusion of silicon from the semiconductor wafer side.

    摘要翻译： 在形成金属膜的过程中，当在形成在硅半导体晶片上的电路元件的扩散层（电极等）上形成金属布线时，通过PECVD在加工体的表面上沉积Ti膜 使用TiCl4气体和H2气体作为原料气体。 通过向材料气体中添加N2气体，在扩散层表面上形成Ti-Si-N膜，随后在Ti-Si-N膜上形成Ti膜。 Ti-Si-N膜抑制硅从半导体晶片侧的扩散。

    Ti-containing film formation method and storage medium
    2.
    发明授权
    Ti-containing film formation method and storage medium 有权
    含Ti成膜方法和储存介质

    公开(公告)号：US08257790B2

    公开(公告)日：2012-09-04

    申请号：US12280044

    申请日：2007-02-21

    申请人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

    发明人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

    IPC分类号： C23C16/00 ,  C23C16/06 ,  C23C16/08

    CPC分类号： C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

    摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

    摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。

    METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM
    3.
    发明申请
    METHOD FOR FORMING Ti-BASED FILM AND STORAGE MEDIUM 有权
    形成Ti基膜和储存介质的方法

    公开(公告)号：US20100227062A1

    公开(公告)日：2010-09-09

    申请号：US12280044

    申请日：2007-02-21

    申请人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

    发明人： Kensaku Narushima ,  Satoshi Wakabayashi ,  Kunihiro Tada

    IPC分类号： C23C16/22

    CPC分类号： C23C16/14 ,  C23C8/36 ,  C23C16/4405 ,  C23C16/56

    摘要： A Ti film is formed on a surface of a wafer W placed inside a chamber 31, while injecting a process gas containing TiCl4 gas into the chamber 31 from a showerhead 40 made of an Ni-containing material at least at a surface. The method includes performing formation of a Ti film on a predetermined number of wafers W while setting the showerhead 40 at a temperature of 300° C. or more and less than 450° C., and setting TiCl4 gas at a flow rate of 1 to 12 mL/min (sccm) or setting TiCl4 gas at a partial pressure of 0.1 to 2.5 Pa, and then, performing cleaning inside the chamber 31, while setting the showerhead 40 at a temperature of 200 to 300° C., and supplying ClF3 gas into the chamber 31.

    摘要翻译： 在设置在室31内的晶片W的表面上形成Ti膜，同时从至少在表面上由含Ni材料制成的喷头40将含有TiCl 4气体的处理气体注入到室31中。 该方法包括在将喷头40设定在300℃以上且小于450℃的温度下，在规定数量的晶片W上形成Ti膜，将TiCl 4气体以1〜 12mL / min（sccm）或者在0.1-2.5Pa的分压下设置TiCl 4气体，然后在将喷头40设定在200〜300℃的温度的同时进行室31内的清洗， 气体进入腔室31。

    FILM FORMATION METHOD AND APPARATUS UTILIZING PLASMA CVD
    6.
    发明申请
    FILM FORMATION METHOD AND APPARATUS UTILIZING PLASMA CVD 审中-公开
    电影形成方法和使用等离子体CVD的装置

    公开(公告)号：US20100240216A1

    公开(公告)日：2010-09-23

    申请号：US12789516

    申请日：2010-05-28

    申请人： Kunihiro TADA ,  Hiroaki Yokoi ,  Satoshi Wakabayashi ,  Kensaku Narushima

    发明人： Kunihiro TADA ,  Hiroaki Yokoi ,  Satoshi Wakabayashi ,  Kensaku Narushima

    IPC分类号： H01L21/3205

    CPC分类号： C23C16/45523 ,  C23C16/4408 ,  C23C16/50 ,  H01L21/28562

    摘要： A film formation method to form a predetermined thin film on a target substrate includes first and second steps alternately performed each at least once. The first step is arranged to generate first plasma within a process chamber that accommodates the substrate while supplying a compound gas containing a component of the thin film and a reducing gas into the process chamber. The second step is arranged to generate second plasma within the process chamber while supplying the reducing gas into the process chamber, subsequently to the first step.

    摘要翻译： 在目标衬底上形成预定薄膜的成膜方法包括：至少一次交替执行的第一和第二步骤。 第一步被布置成在处理室内产生第一等离子体，该等离子体容纳基板，同时将含有薄膜组分的还原气体和还原气体供应到处理室中。 第二步骤被布置成在处理室内产生第二等离子体，同时在第一步骤之后将还原气体供应到处理室中。