摘要:
An assembly for measuring a trench depth parameter of a workpiece is disclosed. The assembly has an ultra-violet radiation source; a split fiber bundle having a first branch for propagating the ultra-violet radiation from the radiation source to a lens, and a second branch; a lens for focusing the UV radiation to the workpiece and refocusing an ultra-violet interference signal to the second branch; and a detector responsive to the ultra-violet interference signal received through the second branch. The detector transforms the ultra-violet interference signal to an electrical signal which is a measure of a trench depth of the workpiece. The ultra-violet interference signal is developed when ultra-violet radiation propagates through the workpiece and reflects from its base region to thereby interfere with ultra-violet radiation that is directly reflected by a workpiece surface which is different from the base region.
摘要:
A pattern measurement method includes: acquiring sectional shapes of a first pattern corresponding to process parameters, respectively; using the acquired sectional shapes to calculate predicted spectral waveforms which would be obtained when light is applied to the first pattern, and adding information on the corresponding process parameters to the calculated predicted spectral waveforms, respectively, to form a waveform library; setting a process parameter to obtain a desired shape, and acquiring an actual spectral waveform of a second pattern actually created from the first pattern using the set process parameter; performing waveform matching between the actual spectral waveform and the predicted spectral waveforms to acquire matching scores for respective waveform matching, and calculating an optimum process parameter providing the maximum matching score; generating an optimum pattern sectional shape corresponding to the optimum process parameter to measure the optimum pattern sectional shape.
摘要:
A pattern evaluation method includes: acquiring a plurality of examination images obtained in regard to an evaluation target pattern, at least one of the plurality of examination images being different from the other examination images; detecting all edges of the evaluation target pattern in each of the examination images; executing alignment of the evaluation target pattern in the respective examination images with a sub-pixel accuracy based on the detected edges; superimposing the aligned pattern edges to generate a single combined edge; measuring the combined edge; and evaluating the evaluation target pattern based on a result of the measurement.
摘要:
A pattern matching method includes: detecting an edge of a pattern in a pattern image obtained by imaging the pattern; segmenting the detected pattern edge to generate a first segment set consisting of first segments; segmenting a pattern edge on reference data which serves as a reference for evaluating the pattern to generate a second segment set consisting of second segments; combining any of the segments in the first segment set with any of the segments in the second segment set to define a segment pair consisting of first and second segments; calculating the compatibility coefficient between every two segment pairs in the defined segment pairs; defining new segment pairs by narrowing down the defined segment pairs by calculating local consistencies of the defined segment pairs on the basis of the calculated compatibility coefficients and by excluding segment pairs having lower local consistencies; determining an optimum segment pair by repeating the calculating the compatibility coefficient and the defining new segment pairs by narrowing down the segment pairs; calculating a feature quantity of a shift vector that links the first and second segments making up the optimum segment pair; and performing position matching between the pattern image and the reference data on the basis of the calculated feature quantity of the shift vector.
摘要:
A pattern shape evaluation method for deciding whether a pair of patterns are disconnected or connected. The method includes extracting a plurality of pattern contour points that make up a contour of a pattern in a measurement region, and creating two pattern contour point sequences based on the plurality of pattern contour points. Each of the two pattern contour point sequences includes a set of the pattern contour points. In the pattern contour point sequence, each of distances between neighboring pattern contour points is equal to or smaller than a predetermined value. The method includes calculating an angle between a line passing through two of the pattern contour points which provide a shortest distance between the two pattern contour point sequences and a reference line arbitrarily defined with respect to the measurement region. The method further includes deciding whether the patterns are disconnected or connected, based on the angle.
摘要:
A method is disclosed whereby a functional nanomaterial such as a monolayer carbon nanotube, a monolayer boron nitride nanotube, a monolayer silicon carbide nanotube, a multilayer carbon nanotube with the number of layers controlled, a multilayer boron nitride nanotube with the number of layers controlled, a multilayer silicon carbide nanotube with the number of layers controlled, a metal containing fullerene, and a metal containing fullerene with the number of layers controlled is produced at a high yield. According to the method, when a multilayer carbon nanotube (3) is formed by a chemical vapor deposition or a liquid phase growth process, an endothermic reaction aid (H2S) is introduced in addition to a primary reactant (CH4, H2) in the process to form a monolayer carbon nanotube (4).
摘要:
A pattern shape evaluation method includes acquiring design data accompanied by an evaluation area in which information on a particular evaluation area within a pattern of a semiconductor device is added to the design data for the pattern, acquiring an image of the pattern, generating edge data for the pattern from the image of the pattern, aligning the design data accompanied by the evaluation area with the edge data and evaluating the shape of the pattern within the evaluation area after the alignment.
摘要:
A pattern evaluation method includes: generating first array data from edge data on a pattern to be evaluated, the edge data on the pattern to be evaluated being shape data including edge points of the pattern to be evaluated; generating second array data from edge data on a reference pattern, the edge data on the reference pattern including edge points of the reference pattern which serves as an inspection standard of the pattern to be evaluated; subjecting each component of the second array data to array conversion processing, the array conversion processing being designed to convert a value of the component of the second array data into a function value of a value of a distance from that component to the edge point closest thereto, thereby generating third array data; executing arithmetic processing between the first array data and the third array data to generate fourth array data; and using a component of the fourth array data to calculate a numerical value representative of an relation between the pattern to be evaluated and the reference pattern.
摘要:
An electron microscope for measuring a dimension of a feature of a specimen includes a focusing lens for focusing an electron beam onto the specimen and a supplying circuit for supplying an exciting current supplied to the focusing lens. A control circuit controls the supplying circuit to vary the exciting current which is supplied to the focusing lens and obtains dimension data of a feature of the specimen at each of the exciting currents which is supplied to the focusing lens. An actual dimension of the feature is determined based on the obtained dimension data. Further, a profile of the feature may be determined based on the changes observed in the dimension data.
摘要:
A handling apparatus includes a base member having a rotating shaft, of a multijoint arm having one end portion thereof connected to the rotating shaft, a holder mounted at the free end portion of the arm, for holding a wafer, a stepping motor for circling the holder together with the arm about the rotating shaft, and another stepping motor for pivoting the arm joints. The multijoint arm is constituted by a plurality of parallel crank mechanisms arranged on corresponding planes in parallel with the circulating plane. One of the links constituting the first-stage parallel crank mechanism is fixed on the base member. During nonuse of the apparatus, the respective parallel crank mechanism overlap each other on the base member. Pulleys are mounted on joints of the arm, and a wire is wrapped around the pulleys. When at least one of the pulleys is pivoted, the parallel crank mechanisms are displaced, thereby extending or retracting the arm.