Crystalline sialon having wurtzite structure
    3.
    发明授权
    Crystalline sialon having wurtzite structure 失效
    具有纤锌矿结构的结晶塞隆

    公开(公告)号:US5429998A

    公开(公告)日:1995-07-04

    申请号:US134955

    申请日:1993-10-12

    CPC分类号: C04B35/597

    摘要: A crystalline sialon comprising crystals containing aluminum, silicon, nitrogen and oxygen, in which the crystal structure has a hexagonal system wurtzite structure identical with that of AlN crystals, and the volume of the unit cell thereof has a value smaller than that of the AlN crystals. The crystalline sialon can be synthesized by mixing a silicon-containing gas, an aluminum halide, a nitrogen atom-containing gas and an oxygen atom-containing gas, converting the gas mixture into plasmas by microwave discharging and depositing a film on the surface of a substrate, in which the temperature of the substrate, while controlling a flow rate of the silicon-containing gas and a flow rate of the oxygen-containing gas. The crystalline sialon of the present invention has high hardness, is excellent in oxidation resistance, as well as excellent in heat conductivity and adhesion with a superhard substrate.

    摘要翻译: 包含含有铝,硅,氮和氧的晶体的结晶塞隆,其中晶体结构具有与AlN晶体相同的六方晶系纤锌矿结构,并且其晶胞体积小于AlN晶体的体积 。 可以通过混合含硅气体,卤化铝,含氮原子的气体和含氧原子的气体来合成结晶硅铝氧氮,通过微波放电将气体混合物转化成等离子体,并将膜沉积在 衬底,其中衬底的温度同时控制含硅气体的流量和含氧气体的流量。 本发明的结晶塞隆具有高硬度,耐氧化性优异,导热性优异且与超硬底材的粘合性优异。

    Forming die manufacturing method
    4.
    发明授权
    Forming die manufacturing method 失效
    成型模具制造方法

    公开(公告)号:US5164221A

    公开(公告)日:1992-11-17

    申请号:US638240

    申请日:1991-01-04

    摘要: A manufacturing method of a forming die includes the steps of depositing a film of aluminum nitride or aluminum oxynitride on the forming surface of a forming member by passing an electric discharge through a mixture gas of halide of aluminum and a gas containing nitrogen atoms and hydrogen atoms or a mixture gas of halide of aluminum, a gas containing nitrogen atoms and a gas containing oxygen atoms by the application of a microwave and thereby ionizing the mixture gas, and fixing such a forming member on a die.

    摘要翻译: 成形模具的制造方法包括以下步骤:通过使铝的卤化物和含有氮原子和氢原子的气体的混合气体通过放电,在成形构件的成形表面上沉积氮化铝或氮氧化铝膜 或铝的卤化物的混合气体,含有氮原子的气体和含有氧原子的气体通过微波进行离子化,从而使混合气体电离,并将这样的成型体固定在模具上。

    Synthesis method by plasma chemical vapor deposition
    5.
    发明授权
    Synthesis method by plasma chemical vapor deposition 失效
    通过等离子体化学气相沉积的合成方法

    公开(公告)号:US5093150A

    公开(公告)日:1992-03-03

    申请号:US493561

    申请日:1990-03-14

    CPC分类号: C23C16/511 C23C16/303

    摘要: A method of synthesizing metal-containing material by a plasma chemical vapor deposition comprises converting a reactive gas containing metal atoms into plasmas in a reaction chamber and supplying an inert gas from outside the plasma region in the reaction chamber. Ceramic films of excellent quality can be synthesized under stable conditions in an industrial mass production process.

    摘要翻译: 通过等离子体化学气相沉积合成含金属材料的方法包括将反应气体含有金属原子转化成反应室中的等离子体,并从反应室内的等离子体区域外部供应惰性气体。 在工业批量生产过程中,在稳定条件下可以合成出优质陶瓷膜。

    Electronic device, system, method for processing information, and recording medium

    公开(公告)号:US10750035B2

    公开(公告)日:2020-08-18

    申请号:US16266218

    申请日:2019-02-04

    申请人: Makoto Sasaki

    发明人: Makoto Sasaki

    IPC分类号: H04N1/00 H04N1/44

    摘要: An electronic device includes: an operation receiving unit to receive operation from a user; a sensor to sense the user existing in a detection range of the electronic device to output detection information indicating that the user exists in the detection range; and processing circuitry to output content for assisting the user in operating the electronic device, when the processing circuitry has determined that the user exists in the detection range based on the detection information and when an elapsed time in which the operation of the user is not received at the operation receiving unit has exceeded a threshold time.

    Method for manufacturing silicon carbide single crystal, and silicon carbide substrate
    10.
    发明授权
    Method for manufacturing silicon carbide single crystal, and silicon carbide substrate 有权
    制造碳化硅单晶的方法和碳化硅衬底

    公开(公告)号:US09082621B2

    公开(公告)日:2015-07-14

    申请号:US13378493

    申请日:2011-02-25

    摘要: Each of first and second material substrates made of single crystal silicon carbide has first and second back surfaces, first and second side surfaces, and first and second front surfaces. The first and second back surfaces are connected to a supporting portion. The first and second side surfaces face each other with a gap interposed therebetween, the gap having an opening between the first and second front surfaces. A closing portion for closing the gap over the opening is formed. A connecting portion for closing the opening is formed by depositing a sublimate from the first and second side surfaces onto the closing portion. The closing portion is removed. A silicon carbide single crystal is grown on the first and second front surfaces.

    摘要翻译: 由单晶碳化硅制成的第一和第二材料基板中的每一个具有第一和第二后表面,第一和第二侧表面以及第一和第二前表面。 第一和第二后表面连接到支撑部分。 第一和第二侧表面彼此间隔开,间隙在第一和第二前表面之间具有开口。 形成用于封闭开口上的间隙的闭合部分。 用于关闭开口的连接部分通过从第一和第二侧表面沉积到闭合部分上而形成。 关闭部分被去除。 在第一和第二前表面上生长碳化硅单晶。