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    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开
    半导体器件

    公开(公告)号：US20150179813A1

    公开(公告)日：2015-06-25

    申请号：US14636589

    申请日：2015-03-03

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Akihisa SHIMOMURA ,  Hidekazu MIYAIRI ,  Fumito ISAKA ,  Yasuhiro JINBO ,  Junya MARUYAMA

    IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

    CPC classification number: H01L21/02683 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

    Abstract: It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10−7/° C. to 38×10−7/° C., preferably 6×10−7/° C. to 31.8×10−7/° C. Next, the layer including the semiconductor film is irradiated with a laser beam to crystallize the semiconductor film so as to form a crystalline semiconductor film. Total stress of the layer including the semiconductor film is −500 N/m to +50 N/m, preferably −150 N/m to 0 N/m after the heating step.

    Abstract translation: 本发明的目的是提供一种制造晶体硅器件和半导体器件的方法，其中可以抑制衬底，基底保护膜和晶体硅膜中的裂纹的形成。 首先，在基板上形成包含半导体膜的层，并加热。 基板的热膨胀系数为6×10-7 /℃至38×10-7 /℃，优选为6×10-7 /℃至31.8×10-7 /℃。接下来， 用激光束照射包含半导体膜的层，使半导体膜结晶化，形成结晶半导体膜。 包括半导体膜的层的总应力在加热步骤之后为-500N / m至+ 50N / m，优选为-150N / m至0N / m。

    SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND PEELING OFF METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
    半导体器件和剥离方法及制造半导体器件的方法

    公开(公告)号：US20170047358A1

    公开(公告)日：2017-02-16

    申请号：US15335854

    申请日：2016-10-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Toru TAKAYAMA ,  Junya MARUYAMA ,  Mayumi MIZUKAMI ,  Shunpei YAMAZAKI

    IPC: H01L27/12

    Abstract: The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled off layer having a small area but also a peeled off layer having a large area over the entire surface at excellent yield ratio. The metal layer or nitride layer 11 is provided on the substrate, and further, the oxide layer 12 being contact with the foregoing metal layer or nitride layer 11 is provided, and furthermore, if the lamination film formation or the heat processing of 500° C. or more in temperature is carried out, it can be easily and clearly separated in the layer or on the interface with the oxide layer 12 by the physical means.

    Abstract translation: 本发明提供一种剥离方法，而不会对剥离层造成损害，其目的在于，不仅剥离面积小的剥离层，而且能够剥离整个表面上具有大面积的剥离层 优良的产率。 金属层或氮化物层11设置在基板上，并且还提供与上述金属层或氮化物层11接触的氧化物层12，此外，如果层叠膜形成或500℃的热处理 或更高的温度，可以通过物理手段在层中或与氧化物层12的界面上容易且清楚地分离。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20150311439A1

    公开(公告)日：2015-10-29

    申请号：US14704303

    申请日：2015-05-05

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Toru TAKAYAMA ,  Junya MARUYAMA ,  Yumiko OHNO

    IPC: H01L51/00 ,  H01L27/32

    CPC classification number: H01L27/1218 ,  H01L23/291 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L51/0002 ,  H01L51/0021 ,  H01L51/0024 ,  H01L51/003 ,  H01L2221/68368 ,  H01L2924/0002 ,  Y10S438/928 ,  Y10S438/982 ,  H01L2924/00

    Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.

    Abstract translation: 本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层 要完全去皮。 此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。 特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和 其制造方法。

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